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Semiconductor device and manufacturing method thereof

A manufacturing method and semiconductor technology, which are applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., can solve the problems of large reverse leakage and difficulty in making Schottky barrier diodes, etc., to improve the withstand voltage performance, increase the Large anode area, the effect of reducing reverse leakage

Inactive Publication Date: 2019-01-18
SHENZHEN JING XIANG TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The present invention aims at technical problems such as large reverse leakage of Schottky barrier diodes in the prior art, and it is difficult to manufacture low leakage Schottky barrier diodes by using a COMS compatible process, and proposes a semiconductor device and a manufacturing method thereof

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  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof
  • Semiconductor device and manufacturing method thereof

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Embodiment Construction

[0026] The technical solutions in the embodiments of the present invention will be clearly and completely described below in conjunction with the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only a part of the embodiments of the present invention, rather than all the embodiments. Based on the embodiments of the present invention, all other embodiments obtained by those of ordinary skill in the art without creative work shall fall within the protection scope of the present invention.

[0027] It should be noted that the terms "first" and "second" in the specification and claims of the present invention and the above-mentioned drawings are used to distinguish similar objects, and not necessarily used to describe a specific sequence or sequence. It should be understood that the terms used in this way are interchangeable under appropriate circumstances so that the embodiments of the present invention described herein can b...

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Abstract

The invention discloses a semiconductor device and a manufacturing method thereof. A manufacture method comprises: forming a buffer layer, a barrier layer and a passivation layer on a semiconductor substrate in sequence; patterning the passivation layer and the barrier layer to form a first anode contact hole; forming a dielectric layer on the passivation layer and within the first anode contact hole and patterning the dielectric layer, the passivation layer and the barrier layer to form a second anode contact hole; forming a first metal layer on the dielectric layer and within the second anode contact hole, patterning the first metal layer to obtain the first metal layer located in an anode region; patterning the dielectric layer and the passivation layer to form cathode contact holes; forming a second metal layer in the dielectric layer, the anode metal layer and the cathode contact hole, patterning the second metal layer to obtain an anode, a field plate, and a cathode, wherein theanode comprises the first metal layer and the second metal layer located in the anode region.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a semiconductor device and a manufacturing method thereof. Background technique [0002] Schottky barrier diode is a semiconductor device made of metal contact semiconductor layer. Compared with semiconductor diodes in the traditional sense, the reverse recovery time is extremely short. Therefore, Schottky barrier diodes are widely used in switching power supplies, frequency converters, drivers and other circuits. Gallium nitride material is the third-generation wide-bandgap semiconductor material. Due to its large forbidden band width, high electron saturation rate, high breakdown electric field, high thermal conductivity, corrosion resistance and radiation resistance, it has become the production of short-wave optoelectronics. The best material for devices and high-voltage, high-frequency and high-power devices. In summary, the Schottky barrier diode made of gallium...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/40H01L21/329
CPCH01L29/872H01L29/402H01L29/66212
Inventor 林信南刘美华刘岩军
Owner SHENZHEN JING XIANG TECH CO LTD
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