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QLED device and its preparation method

A device and fossil technology, which is applied in the field of QLED devices and its preparation, can solve the problems of uneven luminescence of the device, easy damage to the quantum dot luminescent layer, and poor uniformity of film formation, and achieve simplified preparation process, excellent luminous uniformity, and improved Effect of film formation uniformity

Active Publication Date: 2020-11-10
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a QLED device and its preparation method, aiming to solve the problem of poor film formation uniformity of the existing QLED device or the easy damage of the quantum dot light-emitting layer, resulting in uneven light emission of the device

Method used

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  • QLED device and its preparation method

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preparation example Construction

[0040] and, combined figure 1 , the embodiment of the present invention also provides a method for preparing a positive QLED device, comprising the following steps:

[0041] S01. Depositing a graphene layer on the substrate, patterning the graphene layer to form a graphene pixel array 4', modifying the surface of the graphene pixel array 4' away from the substrate, to obtain Functionalized graphene pixel array4;

[0042] S02. Provide an anode 1, deposit a hole injection layer 2 and a hole transport layer 3 sequentially on the anode 1, then transfer the functionalized graphene pixel array 4 onto the hole transport layer 3, and make the modification The treated surface faces away from said hole transport layer 3;

[0043] S03. On the functionalized graphene pixel array 4, deposit the quantum dot light-emitting layer 5, the electron transport layer 6 and the cathode 7 in sequence.

[0044] Specifically, in the above step S01 , the method for depositing the graphene layer on th...

Embodiment 1

[0059] A method for preparing a positive-type printed quantum dot light-emitting diode, comprising the following steps:

[0060] S11. Adopting CVD method to prepare a graphene layer with a thickness of 20nm on the copper sheet, transfer the graphene layer to the silicon chip, and etch the graphene layer into graphene with regular arrangement by photolithography For the pixel array, the graphene on the surface of the graphene pixel array is activated by concentrated sulfuric acid, so that the surface has a large number of active functional groups to obtain a functionalized graphene pixel array;

[0061] S12. Print the PEDOT hole injection layer and the TFB hole transport layer sequentially on the ITO anode, and then transfer the functionalized graphene pixel array to the TFB hole transport layer by a transfer printing method, and the functionalized graphene pixel array The surface with a large number of reactive functional groups faces away from the hole transport layer;

[00...

Embodiment 2

[0064] A method for preparing a reverse printed quantum dot light-emitting diode, comprising the following steps:

[0065] S21. Adopting CVD method to prepare a graphene layer with a thickness of 20nm on the copper sheet, transfer the graphene layer to the silicon chip, and etch the graphene layer into graphene with regular arrangement by photolithography For the pixel array, the graphene on the surface of the graphene pixel array is activated by concentrated sulfuric acid, so that the surface has a large number of active functional groups to obtain a functionalized graphene pixel array;

[0066] S22. Print the ZnO electron transport layer sequentially on the Al cathode, and then transfer the functionalized graphene pixel array to the ZnO electron transport layer by a transfer printing method, and the functionalized graphene pixel array has a surface with a large number of active functional groups on the back For the ZnO electron transport layer;

[0067] S23. Using a printin...

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Abstract

The present invention provides a QLED device, including the bottom electrode and first functional layer of the combination of layers, the functional pixel array set on the first functional layer, and set it on the function of the functional pixel pixel arrayThe quantum dot luminous layer, and the second functional layer and top electrode on the quantum dot luminous layer in turn, among them, the functional pixels include graphene pixels and the surface of the graphene pixel array surface surfaceThe active functional group of modification, and the active official functional group modifies the surface of the graphene pixel back to the surface of the empty acupoint transmission layer.Essence

Description

technical field [0001] The invention belongs to the technical field of light-emitting diodes, and in particular relates to a QLED device and a preparation method thereof. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, are nanocrystalline particles with a radius smaller than or close to the radius of the Bohr excitons. Quantum dots have important application prospects in the field of optoelectronics and electro-optic due to their properties such as quantum confinement effect, surface effect, quantum size effect and quantum tunneling effect, as well as outstanding advantages such as good monochromaticity, high color purity and narrow emission spectrum. . [0003] Quantum dot-based light-emitting diodes are called quantum dot light-emitting diodes (Quantum dots light-emitting diode, QLED), which is a new type of display device. Quantum dot display devices have the advantages of wide color gamut coverage, easy color control, and high colo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/13H10K50/115H10K71/00H10K50/00H01L33/00H01L33/40H10K85/50
Inventor 曹蔚然梁柱荣刘佳
Owner TCL CORPORATION
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