A working frequency approaches f t /2 broadband amplifier

Abstract

The invention discloses a kind of working frequency close to f T / 2 broadband amplifier, the present invention adopts the technical scheme that LC series resonant circuit and cascode structure are connected in parallel, has promoted the high-frequency gain of gain unit, expanded the low-frequency bandwidth of gain unit simultaneously, and then, approaching f T / 2 places have realized the effect of high gain and wide frequency band; the matching circuits of the present invention are all made of on-chip passive devices, and when designing the matching network, the parasitic effects of the signal input and output Pads in the F band are taken into account to ensure The stability and feasibility of the circuit; the gain unit in the present invention is provided with a current bias by a bandgap reference circuit, and the bias current can be precisely adjusted by controlling the bias voltage to achieve the optimal performance of the amplifier.

Description

technical field

[0001] The invention belongs to the field of integrated circuit design, and in particular relates to a T / 2 broadband amplifier. Background technique

[0002] Due to the special position of submillimeter wave and terahertz wave in the electromagnetic spectrum, compared with microwave and light wave, it has many special properties, such as penetrability, low energy, transient, broadband, coherence, Directionality and water absorption, etc., make it have irreplaceable important application value in many fields such as biomedicine, physical chemistry, astronomy, military, national security, and anti-terrorism. However, when designing a transceiver in this frequency band, there are many challenges and difficulties due to the limitation of the manufacturing process, especially the design of the amplifier for signal amplification.

[0003] First of all, there are many passive components in the transceiver circuit, such as inductors, capacitors, transmission lines...

Examples

Embodiment

[0032] This embodiment provides a working frequency close to f T / 2 broadband amplifier, including the first stage amplifier, the second stage amplifier, the third stage amplifier and the current bias circuit. The structures of the gain units of the amplifiers at all levels are exactly the same, such as figure 1shown, which consists of two heterojunction bipolar transistors Q 1 , Q 2 , two capacitors C 1 、C 2 , two inductors L 1 , L 2 . where Q 1 the emitter with Q 2 The collectors are connected to form a cascode structure, which reduces the transistor Q 2 The Miller effect between the collector and the base, thereby improving the reverse isolation of the amplifier circuit; the capacitor C 2 One terminal with transistor Q 1 The base is connected, the other end is connected to GND, which provides RF ground for the common base stage and ensures the normal operation of the cascode structure; the inductance L 1 , L 2 with capacitance C 1 Constitute an LC series reson...

technical field

[0001] The invention belongs to the field of integrated circuit design, and in particular relates to a T / 2 broadband amplifier. Background technique

[0002] Due to the special position of submillimeter wave and terahertz wave in the electromagnetic spectrum, compared with microwave and light wave, it has many special properties, such as penetrability, low energy, transient, broadband, coherence, Directionality and water absorption, etc., make it have irreplaceable important application value in many fields such as biomedicine, physical chemistry, astronomy, military, national security, and anti-terrorism. However, when designing a transceiver in this frequency band, there are many challenges and difficulties due to the limitation of the manufacturing process, especially the design of the amplifier for signal amplification.

[0003] First of all, there are many passive components in the transceiver circuit, such as inductors, capacitors, transmission lines...

Examples

Embodiment

[0032] This embodiment provides a working frequency close to f T / 2 broadband amplifier, including the first stage amplifier, the second stage amplifier, the third stage amplifier and the current bias circuit. The structures of the gain units of the amplifiers at all levels are exactly the same, such as figure 1shown, which consists of two heterojunction bipolar transistors Q 1 , Q 2 , two capacitors C 1 、C 2 , two inductors L 1 , L 2 . where Q 1 the emitter with Q 2 The collectors are connected to form a cascode structure, which reduces the transistor Q 2 The Miller effect between the collector and the base, thereby improving the reverse isolation of the amplifier circuit; the capacitor C 2 One terminal with transistor Q 1 The base is connected, the other end is connected to GND, which provides RF ground for the common base stage and ensures the normal operation of the cascode structure; the inductance L 1 , L 2 with capacitance C 1 Constitute an LC series reson...

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