Preparation of ZIF-67/bismuth vanadate composite and application of ZIF-67/bismuth vanadate composite used as photoanode material

A technology of ZIF-67 and composite materials, applied in the direction of electrodes, electrolysis process, electrolysis components, etc., can solve the problems of MOF stability limitation and so on

Active Publication Date: 2019-01-29
NORTHWEST NORMAL UNIVERSITY
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  • Application Information

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Problems solved by technology

Despite their many advantages, the applications of many MOFs are ultimately limited by their stability under harsh conditions

Method used

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  • Preparation of ZIF-67/bismuth vanadate composite and application of ZIF-67/bismuth vanadate composite used as photoanode material
  • Preparation of ZIF-67/bismuth vanadate composite and application of ZIF-67/bismuth vanadate composite used as photoanode material
  • Preparation of ZIF-67/bismuth vanadate composite and application of ZIF-67/bismuth vanadate composite used as photoanode material

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Embodiment Construction

[0027] The preparation of the ZIF-67 / BiVO4 composite material of the present invention and its application as a photoanode in water splitting and hydrogen production will be further described below through specific examples.

[0028] (1) Preparation of BiVO4de: It is prepared according to the method of electrodeposition combined with heat treatment by Kim and Choi's research group. Specific steps: firstly, BiOI nanosheets were prepared by electrodeposition using CHI 660D electrochemical workstation. FTO glass cleaned ultrasonically with acetone / isopropanol / distilled water (volume ratio: 1:1:1) was used as the working electrode, the Ag / AgCl (3.5 M KCl) electrode was used as the reference electrode, and the Pt electrode was used as the counter electrode. with 6M HNO 3 Adjust the pH of 50 mL0.4 M KI solution to 1.5~1.7, then add 0.970g Bi(NO 3 ) 3 • 5H 2 O until dissolved and the solution color changed to orange-red. Then slowly add 20ml 0.498 g 1,4-benzoquinone ethanol solu...

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Abstract

The invention discloses preparation of a ZIF-67/bismuth vanadate composite. 2 -methylimidazole and CO (NO3) 2.6H2O are dissolved in N, N-dimethylformamide-distil water, and a BiVO4 film is soaked in the mixture for one hour; and then the BiVO4 film is completely washed with the distilled water and ethanol and dried to obtain a final product. According to the preparation of a ZIF-67/bismuth vanadate composite, ZIF-67 is successfully is loaded on the surface of BiVO4 through an in-situ deposition method, a stable ZIF-67/ BiVO4 thin film material is formed. Under high bias, the ZIF-67/BiVO4 composites have higher photocurrent than a pure/BiVO4 composite; and meanwhile, the introduction of ZIF-67 well prolongs the life of carriers and further improves the photoelectric catalytic performance ofthe BiVO4. Through a photocurrent corresponding test and photoelectric injection efficiency calculation, a composite photoelectrode is proved to have excellent photoelectric catalytic performance, can be used in photo anode materials, and can effectively improve hydrogen production efficiency.

Description

technical field [0001] The invention relates to the preparation of a bismuth vanadate composite electrode film, in particular to a ZIF-67 / BiVO 4 The preparation method of the photoelectric catalysis composite material is mainly used as a photoelectric anode material in the reaction of hydrogen production by photoelectrochemical water splitting. Background technique [0002] At present, the massive use of fossil fuels has led to problems such as global climate change and environmental degradation. And all these issues have become the main driving force to accelerate the transition from renewable energy to clean energy. Therefore, the utilization of solar energy, the largest renewable energy source, has received extensive attention, and among the various solar energy conversion options that are widely available, utilizing photoelectrolysis to split water and generate hydrogen by solar energy is one of the most promising technologies. So far, many semiconductor materials have...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C25B11/04C25B11/06C25B1/04
CPCC25B1/04C25B1/55C25B11/051C25B11/057C25B11/075Y02E60/36
Inventor 王其召周诗仟佘厚德王磊黄静伟
Owner NORTHWEST NORMAL UNIVERSITY
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