A kind of preparation method of semiconductor quantum dot-liquid crystal composite structure device
A composite structure and quantum dot technology, which is applied in the fields of instruments, nonlinear optics, optics, etc., can solve the problems of inability to fully exert the effective effect of the external electric field, lack of light field regulation, and inconsistent directions.
Active Publication Date: 2020-03-27
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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Problems solved by technology
However, the current quantum dot-liquid crystal composite structure devices usually lack effective light field regulation, resulting in slow generation and transfer of photogenerated carriers, resulting in response hysteresis
In addition, the grating vector in the photorefractive system in this type of device is inconsistent with the direction of the electric field vector, and the effective effect of the applied electric field cannot be fully utilized, and it is difficult to improve the diffraction efficiency of the photorefractive system
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[0040] A method for preparing a semiconductor quantum dot-liquid crystal composite structure device, the process of which is as follows figure 1 shown, including the following steps:
[0041] Step 1: Preparation of semiconductor quantum dot-liquid crystal mixed solution
[0042] Weigh 500mg of 5CB liquid crystal with a density of 1g / ml with an electronic scale and place it in a 5ml beaker, then weigh 0.25mg of a solute (InP / ZnS) quantum dot solution (solvent is chloroform) with a density of 0.4mg / ml and place it In a 5ml beaker, finally pour the liquid crystal solution into the quantum dot solution to obtain a mixed solution. The mixed solution was placed in a blast drying oven at 70° C. for 10 hours, and the chloroform solvent was evaporated to obtain the final semiconductor quantum dot-liquid crystal mixed solution.
[0043] Step 2: Fabricate the semiconductor quantum dot-liquid crystal composite structure device cavity
[0044] Step 2-1: If figure 2 As shown in (a), two ...
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Abstract
The invention provides a method for preparing a semiconductor quantum dot-liquid crystal composite structure device, which belongs to the field of optoelectronic technology. The present invention aims at preparing quantum dot-liquid crystal composite photorefractive devices with higher diffraction efficiency and shorter response time, based on the photorefractive device based on the photoconductive effect of semiconductor quantum dots and the electro-optic effect of liquid crystals The basic principle is that the control performance of the periodic light field formed by the evanescent standing wave of the laser can be used to accelerate the generation and transfer of photogenerated carriers and shorten the response time of semiconductor quantum dot-liquid crystal composite structure devices. The grating vector in the semiconductor quantum dot-liquid crystal photorefractive system is in the same direction as the electric field vector, which can improve the diffraction efficiency of the photorefractive system. The invention can be used to improve performance parameters such as brightness, color performance and contrast of display devices.
Description
technical field [0001] The invention belongs to the field of optoelectronic technology, and in particular relates to a preparation method for optical field control of a semiconductor quantum dot-liquid crystal composite structure device Background technique [0002] The photoconductive effect generally refers to the phenomenon that the conductivity of semiconductors changes due to laser irradiation (photoconductive effects). When the semiconductor material is irradiated with light and absorbs the energy of photons, the internal non-conductive state electrons become conductive state electrons, causing the carrier concentration to increase, resulting in an increase in material conductivity. Under the action of laser, the semiconductor quantum dots absorb the incident photon energy, and when the photon energy is greater than or equal to the forbidden band width of the semiconductor material, electron-hole pairs are excited, which increases the carrier concentration, increases t...
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IPC IPC(8): G02F1/29G02F1/1333
CPCG02F1/1333G02F1/29
Inventor 黄小平陈涛孙静泊张培峰黄秋莹
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA