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a bipolar tube

A bipolar transistor and emitter technology, applied in semiconductor devices, electrical components, circuits, etc., can solve problems such as current edge effect and uneven current, and achieve uniform current distribution, low cost, and low dynamic power consumption.

Active Publication Date: 2021-03-30
李思敏
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The other is that the current is not uniform, and there is a serious current edge effect

Method used

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Embodiment Construction

[0043] figure 1 It is a structural schematic diagram of an embodiment of the bipolar tube of the present invention. The structure shown comprises that the upper surface of the silicon substrate sheet 4 having an N-type low-resistivity layer 42 as the lower layer and an N-type high-resistivity layer 41 as the upper layer has an N-type emitter region 3 with a high doping concentration, and the N-type emitter region 3 is connected to the emitter metal layer 1, and there is a P-type base region 2 under the N-type emitter region 3, and the side of the P-type base region 2 is connected to a P-type concentrated base region with a higher doping concentration than the P-type base region 2. 6. The P-type concentrated base region 6 is orthogonal to the bus bar 61 in the P-type concentrated base region. There is a base metal layer 10 above the silicon substrate 4, and the upper N-type high-resistivity layer 41 of the silicon substrate 4 is located in the P-type base. The part below the re...

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Abstract

The invention relates to a bipolar transistor. The upper surface of a silicon substrate with an N-type low resistivity layer in the lower layer and an N-type high resistivity layer in the upper layeris provided with multiple strips formed by N-type emitting areas, P-type base areas and P-type dense base areas; and the upper surface of the N-type emitting area in each strip is communicated with anemitter metal layer. The bipolar transistor is characterized in that the base metal layer is connected with the upper surface of a dense base area busbar, the number of pressure welding blocks on theemitter is no smaller than 2; and the repeated interval of the strips is smaller than 300 mum. The bipolar transistor is uniform in current distribution, quick in switching speed, strong in anti-impact ability, high in power and low in cost.

Description

technical field [0001] The invention belongs to the technical field of silicon semiconductor devices and relates to a bipolar tube. Background technique [0002] Bipolars are current-driven transistors that have been around for decades. In 1979, Hisao Kondo proposed the gate associated transistor GAT (Gate Associated Transistor), followed by a detailed analysis (see IEEETrans. Electron Device, vol. ED-27, PP.373-379.1980). In 1994, Chen Fuyuan, Jin Wenxin, and Wu Zhonglong made a further analysis of the gate transistor GAT (see "Power Electronics Technology", No. 4, 1994, 1994.11.pp52-55), pointing out that the gate transistor device exhibits high withstand voltage, Excellent characteristics such as fast switching and low saturation voltage drop. [0003] The combined gate transistor is a compound transistor of a bipolar transistor and an electrostatic induction transistor, and is a special bipolar transistor. Tie-gate transistors are also called electrostatic shielding t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/732H01L29/10
CPCH01L29/1004H01L29/732
Inventor 李思敏
Owner 李思敏