Material conveying channel, material supplying device and crystal growing system

Abstract

The invention discloses a material conveying channel used for transferring materials from the exterior of a furnace body to the interior of the furnace body in an airtight state. The material conveying channel comprises a charging channel and a feeding channel. The charging channel is formed inside the furnace body and is opposite to a crucible. The feeding channel can extend or retract relative to the charging channel, and the feeding channel penetrates through the furnace body and communicates with the charging channel when located at the extending position. The invention further discloses amaterial supplying device and a crystal growing system with the material supplying device. The material supplying device further at least comprises a storage mechanism besides the material conveyingchannel. The storage mechanism is used for accommodating the materials, and the materials in the storage mechanism can be supplied into the crucible inside the furnace body through the material conveying channel in the airtight state. The requirement for large charging quantity is met, the charging process and the single crystal silicon rod cooling process can be conducted simultaneously, thus thecharging time is shortened, the production efficiency of single crystal silicon rods is improved, and meanwhile, the stability and safety of exterior charging are improved.

Description

technical field [0001] The invention belongs to the technical field of single crystal growth, and relates to auxiliary equipment for single crystal growth, in particular to a material delivery path, a material supply device and a crystal growth system with the material delivery path. Background technique [0002] Polysilicon is the main raw material for the production of solar photovoltaic products and semiconductor products. The Czochralski (Cz) method is one of the most commonly used preparation methods for monocrystalline silicon. High-purity solid polycrystalline silicon raw materials are melted in a crucible in a crystal forming furnace (single crystal furnace) to form a melt, and the seeds are dropped The crystal is brought into contact with the melt in the rotating crucible, and then the seed crystal is slowly pulled out, and the melt solidifies around the seed crystal to form a single crystal silicon rod. [0003] After the traditional Cz single crystal furnace comp...

AI Technical Summary

Problems solved by technology

The patent application with the application publication number CN1153230A provides a solid material feeding system for a furnace. The feeding pipe of the feeding system can selectively change the radial position of the feeding pipe outlet relative to the top of the crucible to avoid splashing and improve The utilization rate of heat energy is high, but the structure of the feeding system is complex, the risk of material clogging exists in the complicated operating mechanism, and the positioning of the outlet of the feeding pipe is difficult to accurately control

The patent with the authorized announcement number CN102312285B provides an external continuous feeding mechanism for single crystal furnaces, which has an inner tube for discharging and an outer tube for discharging, and the polysilicon material is transported from the inner tube for discharging to the outer tube for discharging, which limits The inner diameter of the feeding inner tube is not suitable for bulk materials with large particle sizes; in addition, the overall height of the feeding mechanism is high, which is not conducive to feeding operations and increases operational safety hazards

The patent application with the application publication number CN106400105A discloses that the technical defect of the external feeding device is similar to that of the patent CN102312285B, and it is difficult to effectively control the feeding amount and feeding speed of the polysilicon material

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