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A kind of preparation method of p+/p/n antimony selenide thin film battery

A thin film battery, antimony selenide technology, applied in circuits, electrical components, photovoltaic power generation and other directions, can solve the problems of low carrier concentration of antimony selenide, restricting development, and hindering efficiency, achieving low cost, promoting development, The effect of high degree of industrialization

Active Publication Date: 2020-02-04
CHANGZHOU UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the interfacial recombination between the buffer layer and the antimony selenide film in the current antimony selenide thin film battery has certain obstacles to its efficiency, and the low carrier concentration of antimony selenide limits its development.

Method used

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  • A kind of preparation method of p+/p/n antimony selenide thin film battery
  • A kind of preparation method of p+/p/n antimony selenide thin film battery
  • A kind of preparation method of p+/p/n antimony selenide thin film battery

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Experimental program
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Embodiment 1

[0020] 1. The substrate is made of FTO glass, which is ultrasonically cleaned with alkaline solution, acetone, ethanol, and deionized water in sequence, and dried for later use.

[0021] 2. Preparation of N-type CdS thin film

[0022] CdSO 4 Solution 15mL, ammonia water 19mL, and thiourea solution 15mL were poured into a beaker filled with 250mL deionized water and mixed uniformly to obtain a blended solution. Clamp the cleaned FTO glass into the blended solution and stir solution, the reaction time is 20min, the reaction temperature is 70°C, and a CdS film with a thickness of about 40nm is obtained, dried by ultrasonic wave and placed in an oxygen plasma machine, and treated with oxygen plasma for 15min to obtain a processed N-type CdS film.

[0023] 3. P-type Sb 2 Se 3 Film preparation

[0024] (1) Put the above-mentioned treated N-type CdS film into the Sb 2 Se 3 In the powder rapid annealing furnace, the cavity pressure is evacuated to 0.34Pa by using a vacuum pump. ...

Embodiment 2

[0039] 1. The substrate is made of FTO glass, which is ultrasonically cleaned with alkaline solution, acetone, ethanol, and deionized water in sequence, and dried for later use.

[0040] 2. Preparation of N-type CdS thin film

[0041] CdSO 4 Solution 20mL, ammonia water 35mL, thiourea solution 25mL, pour into a beaker filled with 300mL deionized water and mix evenly to obtain a mixed solution, clamp the cleaned FTO glass into the mixed solution, and stir the solution, The reaction time was 30 minutes, and the reaction temperature was 65°C to obtain a CdS film with a thickness of about 50 nm, which was dried by ultrasonic and placed in an oxygen plasma machine, and treated with oxygen plasma for 30 minutes to obtain a processed N-type CdS film.

[0042] 3. P-type Sb 2 Se 3 Film preparation

[0043] (1) Put the above-mentioned treated N-type CdS film into the Sb 2 Se 3 In the powder rapid annealing furnace, the chamber pressure is evacuated to below 0.34Pa by using a vacuu...

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Abstract

The present invention belongs to the technical field of thin film solar cell preparation, and especially relates to a novel P+ / P / N antimony selenide thin film cell preparation method. According to thenovel thin film solar cell, an ultrathin Al2O3 thin film is deposited at the Sb2Se3 surface to allow the Al2O3 to be diffused at the internal portion of a Sb2Se3 layer to improve the carrier concentration of the Sb2Se3 so as to improve the cell efficiency. The concrete preparation method comprises the steps of: preparing a layer of CdS thin film with a thickness about 40nm through adoption of a water bath method, performing oxygen plasma processing of the obtained CdS for 15 min, employing a RTE method to deposit a layer of Sb2Se3 thin film at the surface of the CdS, employing the ALD technology to deposit the Al2O3 thin film of an atom layer at the Sb2Se3 surface, and finally, plating a layer of Au with the thickness of 80nm to obtain a P+ / P / N antimony selenide thin film cell.

Description

technical field [0001] The invention belongs to the technical field of preparation of thin film solar cells, in particular to a P + The preparation method of / P / N antimony selenide thin film battery. Background technique [0002] In recent years, with the gradual depletion of limited non-renewable resources such as oil and coal on the earth, the utilization and development of renewable energy has become more and more urgent. Among them, solar photovoltaic power generation will inexhaustibly radiate to the ground. Solar energy is continuously converted into electrical energy through the photoelectric conversion of photovoltaic devices such as solar cells, and has become the safest, most environmentally friendly and most potential competitor in renewable energy. [0003] So far, common solar cells mainly include silicon cells, thin-film cells, etc. Thin-film cells are mainly divided into perovskite, CIGS and CZTS, etc. However, perovskite cells have environmental instability,...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/072
CPCH01L31/072H01L31/18Y02E10/50Y02P70/50
Inventor 丁建宁陈志文袁宁一郭华飞
Owner CHANGZHOU UNIV
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