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Resistive layer and manufacturing method thereof

A resistive layer and thin film technology, which is applied in coating, metal material coating process, gaseous chemical plating, etc., can solve the problems of unstable chemical properties, difficult storage, and potential safety hazards, and achieve low cost, easy storage, and toxicity small effect

Active Publication Date: 2019-02-12
XIAN MODERN CHEM RES INST
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However W:Al 2 o 3 , Mo:Al 2 o 3 However, there are many shortcomings in the resistance layer: on the one hand, the precursor WF 6 、MoF 6 It is gaseous, chemically unstable, highly toxic and difficult to store, and has a huge potential safety hazard. W: Al 2 o 3 , Mo:Al 2 o 3 The resistance layer containing 16.5% F, C elements will affect the electronic gain, spatial resolution, service life and other properties of the microchannel plate, and the ALD reaction will also produce AlF 3 , HF, CHF x Fluoride by-products severely corrode equipment (Anil U. Mane, Jeffrey W. Elam. Atomic layer deposition of W:Al 2 o 3 nanocomposite film.Chemical Vapor Deposition,2013,19,186-193), (Anil U.Mane,Jeffrey W.Elam.Nanostructured composite thin films with tailored resistance by atomic layer deposition,2013,Proc.of SPIE vol.8818); on the other hand metal W growth rate / cycle, Al 2 o 3 growth rate / cycle, W growth rate is too fast will inevitably lead to W thin film particles coated Al 2 o 3 Therefore, the uneven doping of the particles will eventually affect the performance of the resistance layer

Method used

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  • Resistive layer and manufacturing method thereof
  • Resistive layer and manufacturing method thereof
  • Resistive layer and manufacturing method thereof

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Experimental program
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Effect test

Embodiment 1～5

[0025] The resistance of the film was measured with a high resistance meter (B2985A / 87A). A quartz crystal microbalance (QCM, STM-2) was used to monitor the film growth process in situ. Ellipsometer (UVISEL) test film thickness. Scanning electron microscope (SEM, FEI Quanta 600) was used to observe the morphology of the film.

[0026] Preparation of Ru:Al by Atomic Layer Deposition 2 o 3 The steps of resistive layer are as follows:

[0027] In the first step, the Si(100) sheet is placed in the atomic layer deposition reactor, the reactor temperature is 280 ° C, the pressure is 1 Torr, and the carrier gas N 2 Flow rate 80ml / min, Ru(Cp) 2 Heating temperature is 80°C, purging Ru(Cp) 2 N 2 Flow rate 40ml / min, oxygen partial pressure 50%;

[0028] The second step, 1 cycle of Ru thin film growth timing: N 2 The carrier gas will be Ru(Cp) 2 The steam is brought into the reactor and adsorbed on the surface of the substrate for 5 seconds, N 2 Purge for 30 seconds, O 2 Pulse...

Embodiment 6～9

[0036] Preparation of Ru:Al by Atomic Layer Deposition Technology 2 o 3 The steps of resistive layer are as follows:

[0037] In the first step, the Si(100) sheet is placed in the atomic layer deposition reactor, the reactor temperature is 280 ° C, the pressure is 1 Torr, and the carrier gas N 2 Flow rate 80ml / min, Ru(Cp) 2 Heating temperature is 80°C, purging Ru(Cp) 2 N 2 Flow rate 40ml / min, oxygen partial pressure 50%;

[0038] The second step, 1 cycle of Ru thin film growth timing: N 2 The carrier gas will be Ru(Cp) 2 The steam is brought into the reactor and adsorbed on the surface of the substrate for 5 seconds, N 2 Purge for 30 seconds, O 2 Pulse into the reactor for 20-60 seconds, N 2 Purge for 30 seconds; 1 cycle of Al 2 o 3 Thin film growth sequence: N 2 The carrier gas will be Al(CH 3 ) 3 brought into the reactor and adsorbed on the surface of the Ru film for 5 seconds, N 2 Purge for 30 seconds, H 2 O pulses into the reactor for 5 seconds for adsorpti...

Embodiment 10

[0045] Preparation of Ru:Al by Atomic Layer Deposition Technology 2 o 3 The steps of resistive layer are as follows:

[0046] In the first step, the microchannel plate is placed in the atomic layer deposition reactor, the reactor temperature is 280 ° C, the pressure is 1 Torr, and the carrier gas N 2 Flow rate 80ml / min, Ru(Cp) 2 Heating temperature is 80°C, purging Ru(Cp) 2 N 2 Flow rate 40ml / min, oxygen partial pressure 50%;

[0047] The second step, 1 cycle of Ru thin film growth timing: N 2 The carrier gas will be Ru(Cp) 2 The steam is brought into the reactor and adsorbed on the surface of the substrate for 5 seconds, N 2 Purge for 30 seconds, O 2 Pulse into the reactor for adsorption for 30 seconds, N 2 Purge for 30 seconds; 1 cycle of Al 2 o 3 Thin film growth sequence: N 2 The carrier gas will be Al(CH 3 ) 3 brought into the reactor and adsorbed on the surface of the Ru film for 5 seconds, N 2 Purge for 30 seconds, H 2 O pulses into the reactor for 5 sec...

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Abstract

The invention relates to a resistive layer and a manufacturing method of the resistive layer. The component of the resistive layer is Ru:Al203. A deposition method of the Ru:Al203 atomic layer of theresistive layer comprises the main steps that (1) a base material is placed in an atomic layer deposition reactor; (2) N2 carrier gas carries Ru(Cp)2 into the reactor to be adsorbed to the surface ofthe base material, purging is conducted, O2 pulse enters the reactor, purging is conducted, then Ru film is generated, the N2 carrier gas carries Al(CH3)3 into the reactor to be adsorbed on the surface of the Ru film, purging is conducted, H2O pulse enters the reactor, purging is conducted, and then Al2O3 is generated; and (3) according to the needed resistance, the step (2) is repeatedly executed. The manufacturing method of the resistive layer can accurately adjust the doping ratio of the resistive layer so as to enable the resistive layer to meet the standard resistance range and has the advantages that the purity of the film is high, the film is dense and uniform, and the thickness of the film can be accurately controlled; and besides, no poisonous gas or hazardous gas is discharged, and batch production is easy to achieve.

Description

technical field [0001] The invention belongs to the nano-manufacturing technology of photoelectric imaging devices, and in particular relates to a resistance layer and a preparation method thereof. Background technique [0002] As a compact channel-type array electron multiplier with two-dimensional spatial resolution developed for low-light image intensifiers initially, the micro-channel plate can multiply and amplify the photoelectrons from the photocathode and restore them to visible light images. The microchannel plate is an electron multiplication element. When high-speed electrons are incident on the surface of a solid surface, they continuously collide with the electrons in the body to excite the electrons and escape the surface. This process is called secondary electron emission. The microchannel plate is to use the secondary electron multiplication properties of the surface of the material to complete the enhancement of the electronic image. With the continuous dev...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C16/18C23C16/40C23C16/455
CPCC23C16/18C23C16/403C23C16/45529
Inventor 冯昊龚婷秦利军李建国王维平惠龙飞张王乐
Owner XIAN MODERN CHEM RES INST
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