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Single crystal silicon directional solidification seeding module

A directional solidification, single crystal silicon technology, applied in the direction of single crystal growth, single crystal growth, self-solidification method, etc., can solve the problem of difficult control of the temperature field of the single crystal silicon growth environment, achieve good fixed suspension effect, simple structure , the effect of convenient operation

Active Publication Date: 2020-09-08
永平县泰达废渣开发利用有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is: in the process of growing monocrystalline silicon by directional solidification, it is difficult to control the temperature field of the monocrystalline silicon growth environment, and the liquid silicon raw material is easy to nucleate and crystallize on the inner wall of the crucible during the directional solidification process to form polycrystalline silicon In summary, the present invention provides a monocrystalline silicon directional solidification seeding module that solves the above problems

Method used

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  • Single crystal silicon directional solidification seeding module
  • Single crystal silicon directional solidification seeding module
  • Single crystal silicon directional solidification seeding module

Examples

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Effect test

Embodiment 1

[0034] Single crystal silicon directional solidification seeding module, including a first crucible 1 and a second crucible 2, the second crucible 2 is sleeved in the first crucible 1, and an installation hole is opened at the geometric center of the inner bottom of the second crucible 2 12. A fixing member 13 for holding the seed crystal 3 is detachably connected in the installation hole 12; the outer diameter of the second crucible 2 is smaller than the inner diameter of the first crucible 1, between the first crucible 1 and the second crucible 2 Graphite thermal insulation woven sleeve 4 is arranged in the annular chamber between them, the graphite thermal insulation woven sleeve 4 has a cylindrical structure with both axial ends open, and the axial end of graphite thermal insulation woven sleeve 4 is fixed in the annular chamber by connecting piece The top end and the other axial end hang naturally on the bottom of the annular chamber under the action of gravity.

Embodiment 2

[0036]Further improvement on the basis of Example 1, the connector 5 is an annular plate structure, the inner diameter of the annular plate is equal to the inner diameter of the second crucible 2, and the outer diameter of the annular plate is equal to the outer diameter of the first crucible 1; graphite insulation One end open end of woven cover 4 is fixed on the lower plate surface of annular plate. A first positioning ring 6 and a second positioning ring 7 are also convexly provided on the lower plate surface of the annular plate along the circumferential direction; The first positioning groove 8 and the second positioning groove 9 adapted to the second positioning ring 7 are provided along the circumferential direction on the top end surface of the second crucible 2 . A lifting ring 10 is provided on the upper surface of the annular plate. A counterweight ring 11 is provided at the axial bottom end of the graphite thermal insulation woven sleeve 4; a positioning column 16...

Embodiment 3

[0038] Further improvement on the basis of Example 2, the fixing member 13 is a cylindrical structure with one end open and one end closed, the seed crystal 3 is inserted into the cylindrical structure and fixed; the upper ring of the outer wall of the top open end of the cylindrical structure is provided with a limit plate 14, the limiting plate 14 is provided with a through hole, the bottom surface of the second crucible 2 and the outer edge of the mounting hole 12 is provided with a threaded hole adapted to the through hole, through the graphite pin 15 through the Through hole, screwed into the threaded hole to fix. The side wall of the cylindrical structure is provided with a threaded through hole, the axis of the threaded through hole is perpendicular to the axial direction of the cylindrical structure, and the seed crystal in the cylindrical structure is screwed into the threaded through hole by graphite pin 15. 3 Press and fix.

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Abstract

The invention discloses a monocrystalline silicon directional solidification seeding module. The monocrystalline silicon directional solidification seeding module comprises a first crucible and a second crucible, wherein the second crucible is arranged in the first crucible in a sleeving manner; the bottom in the second crucible is provided with a seed crystal; the outer diameter of the second crucible is smaller than the inner diameter of the first crucible; a graphite heat-insulating woven sleeve is arranged in an annular chamber between the first crucible and the second crucible; the graphite heat-insulating woven sleeve is of a cylindrical structure with two openings in two ends along the axial direction; one end of the graphite heat-insulating woven sleeve in the axial direction is fixed to the top end of the annular chamber through a connecting piece, and the other end in the axial direction is hung at the bottom of the annular chamber naturally under the action of gravity. By adopting the monocrystalline silicon directional solidification seeding module, a liquid silicon raw material can be effectively prevented from nucleating and crystalizing on the side wall of the firstcrucible, and a high-quality monocrystalline silicon product can be obtained.

Description

technical field [0001] The invention relates to the technical field of monocrystalline silicon, in particular to a seeding module for directional solidification of monocrystalline silicon. Background technique [0002] Silicon single crystal and silicon polycrystalline ingot are the most commonly used materials for crystalline silicon solar cells. Generally, solar cells manufactured using silicon single crystal materials have higher photoelectric conversion efficiency than solar cells manufactured using silicon polycrystalline materials. At present, the most commonly used manufacturing methods for silicon single crystal are pulling method (Czochralski method) and zone melting method (Floating Zone method); the manufacturing method for silicon polycrystal usually adopts directional solidification method (ie casting method). The directional solidification method is to place the silicon raw material in the crucible in the polycrystalline ingot casting furnace, and change the t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B11/00C30B11/14
CPCC30B11/002C30B11/14C30B29/06
Inventor 羊实庹开正
Owner 永平县泰达废渣开发利用有限公司
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