High-thermal conductivity and electric insulation liquid-phase sintering silicon carbide ceramic and SPS (Spark Plasmas Sintering) process preparation method thereof
A technology of silicon carbide ceramics and liquid phase sintering, applied in the field of electrical insulating liquid phase sintered silicon carbide ceramics and its preparation, and high thermal conductivity, can solve problems such as lattice defects and low thermal conductivity of polycrystalline silicon carbide ceramics, and achieve high The effect of resistivity
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[0025] The invention relates to a method for preparing SPS (glow discharge plasma sintering) of high thermal conductivity and electrical insulation liquid phase sintered silicon carbide (SiC) ceramics. The liquid phase sintered SiC is obtained after glow discharge plasma sintering by adding rare earth sintering aids ceramics. The preparation method includes the following steps: using SiC powder, rare earth oxide powder, etc. as raw materials, mixing the raw materials to form a slurry; drying the mixed slurry through a sieve, and loading the obtained powder into a mold; Glow discharge plasma (SPS) sintering under pressure and inert atmosphere, sintering temperature is 1850~1950℃, holding time is 10~30min, pressure is 20-30MPa. The preparation process of the invention is fast, the prepared ceramic material has a fine crystal grain structure, the silicon carbide crystal grains are less than 2 microns, more than 90% are less than 1 micron, and have high thermal conductivity and ele...
Embodiment 1
[0037] 97wt% SiC, 3wt% Y 2 O 3 -CeO 2 Sintering aid (Y 2 O 3 And CeO 2 The molar ratio is 1:1) a total of 100 g, water is used as a solvent, the powder is prepared into a slurry with a solid content of 45 wt%, 200 g of SiC balls are used as the ball milling medium, and the planetary ball mill is mixed for 4 hours. Then, it is dried and sieved, and the obtained powder is put into a graphite mold. Then SPS was sintered in an Ar atmosphere at a sintering temperature of 1950°C, a holding time of 10 minutes, and a pressure of 30 MPa. The density of the obtained SiC liquid phase ceramic is 2.66 g cm -3 , Hv 3.0 = 12.77 ± 0.15 GPa. The obtained ceramic was made into a small disc with a thickness of Φ10mm and a thickness of 2.5mm. The thermal conductivity λ was measured to be 84.18w / (m·K) and the resistivity was 2.14×10 10 Ω·cm, see the microstructure figure 1 .
Embodiment 2
[0039] 97wt% SiC, 3wt% Er 2 O 3 -CeO 2 A total of 100 g of sintering aids are used, water is used as a solvent, the powder is prepared into a slurry with a solid content of 45% by weight, 200 g of SiC balls are used as the ball milling medium, and the planetary ball mill is mixed for 4 hours. Then, it is dried and sieved, and the obtained powder is put into a graphite mold. Then SPS was sintered in an Ar atmosphere at a sintering temperature of 1950°C, a holding time of 10 minutes, and a pressure of 30 MPa. The density of the obtained SiC liquid phase ceramic is 2.89 g cm -3 , Hv 3.0 = 13.25±0.23GPa. The obtained ceramics were made into small discs with a thickness of Φ10mm and a thickness of 2.5mm. The thermal conductivity λ was measured to be 88.62w / (m·K) and the resistivity was 3.37×10. 9 Ω·cm, see the microstructure figure 2 .
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