Aluminum-free high-efficiency five-junction solar cell

Abstract

The invention discloses an aluminum-free high-efficiency five-junction solar cell. The aluminum-free high-efficiency five-junction solar cell comprises a Ge substrate, wherein the Ge substrate is a p-type Ge single crystal wafer; the upper surface of the Ge substrate is sequentially provided with a GaInAs / GaInP buffer layer, a GaInNAs sub cell, a GaInAs sub cell, a first perovskite sub cell and asecond perovskite sub cell according to the layered superposition structure from bottom to top; the GaInAs / GaInP buffer layer and the GaInNAs sub cell are connected through a first tunnel junction; the GaInNAs sub cell and the GaInAs sub cell are connected through a second tunnel junction; the GaInAs sub cell and the first perovskite sub cell are connected through a third tunnel junction; and thefirst perovskite sub cell and the second perovskite sub cell are connected through a fourth tunnel junction. By virtue of the solar cell, the collection efficiency of the sub-cells of the wide-band gap material can be improved, the short-circuit current can be increased, the production cost is saved, the advantages of the five-junction cell are developed finally, and the overall photoelectric conversion efficiency of the cell is improved.

Description

technical field [0001] The invention relates to the technical field of solar photovoltaic power generation, in particular to an aluminum-free high-efficiency five-junction solar cell. Background technique [0002] At present, from the perspective of technological development history, solar cells have experienced the development of three generations of solar cells: the first generation of solar cells is crystalline silicon cells (monocrystalline silicon and polycrystalline silicon solar cells), and the second generation of solar cells is thin film cells (silicon-based thin film cells). Solar cells, cadmium telluride solar cells, copper indium gallium selenide thin film solar cells and organic polymer solar cells, etc.), the third generation solar cells are high-efficiency cells (quantum dot solar cells, perovskite solar cells and gallium arsenide (multiple junction) batteries, etc.). [0003] Gallium arsenide multi-junction solar cells are widely used in concentrated photovo...

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Problems solved by technology

[0005] Wide bandgap materials for two-junction cells with a bandgap of 2.2eV and 1.7eV generally increase the bandgap of the material by increasing the aluminum component, while the oxygen-based defects introduced by the high-aluminum component will lead to poor material quality and short lifetime of the material minority. Makes the photogenerated carrier collection efficiency low

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