Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Preparation method of environment-friendly photoresist

A photoresist, environment-friendly technology, applied in the field of preparation of environment-friendly photoresist, can solve problems such as harmful effects on the environment, threats to human health, etc., and achieves good resolution, high graphic contrast, and good lithography effect of effect

Inactive Publication Date: 2019-02-19
嘉兴市海德姆智能电气有限公司
View PDF0 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, general photoresists are made of materials containing quinone azido compounds. After being exposed to light, photodecomposition reactions will occur, changing from oil-soluble to water-soluble, which can be made into photoresists, and quinone azido will have certain harmful effects on the environment and even threaten human health.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] A preparation method of an environment-friendly photoresist, the composition is by weight, comprising the following steps:

[0028] (1) Stir and mix 1 part of 3-aminophenol and 10 parts of phosphoric acid evenly, slowly add 1 part of ethyl acetoacetate dropwise for 15 minutes, heat up to 95°C, stir, condense and reflux, and react for 2 hours;

[0029] (2) filter in the funnel through filter paper, wash 3 times with deionized water;

[0030] (3) Transfer to a vacuum drying oven, and dry at 60°C for 9 hours to obtain product A;

[0031] (4) Mix and heat 0.45 parts of product A and 10 parts of tetrahydrofuran to 60°C, condense and reflux, and stir for 30 minutes;

[0032] (5) Cool down to 0°C, add 0.6 parts of acryloyl chloride dropwise, fill with nitrogen after the dropwise addition, and stir for 1.5 hours;

[0033] (6) add deionized water, separate out white solid, wash 3 times with deionized water;

[0034] (7) Transfer to a vacuum drying oven, and dry at 60°C for 9 ...

Embodiment 2

[0037] A preparation method of an environment-friendly photoresist, the composition is by weight, comprising the following steps:

[0038] (1) Stir and mix 1.5 parts of 3-aminophenol and 12 parts of phosphoric acid evenly, slowly add 1.5 parts of ethyl acetoacetate dropwise for 15 minutes, heat up to 97°C, stir, condense and reflux, and react for 2 hours;

[0039] (2) filter in the funnel through filter paper, wash 4 times with deionized water;

[0040] (3) Transfer to a vacuum drying oven, and dry at 65°C for 8.5 hours to obtain product A;

[0041] (4) Mix 0.6 parts of product A and 13 parts of tetrahydrofuran and heat to 63°C, condense to reflux, and stir for 30 minutes;

[0042] (5) Cool down to 0°C, add 0.8 parts of acryloyl chloride dropwise, fill with nitrogen after the dropwise addition, and stir for 1.5 hours;

[0043] (6) add deionized water, separate out white solid, wash 4 times with deionized water;

[0044] (7) Transfer to a vacuum drying oven, and dry at 65°C ...

Embodiment 3

[0047] A preparation method of an environment-friendly photoresist, the composition is by weight, comprising the following steps:

[0048] (1) Stir and mix 1.5 parts of 3-aminophenol and 15 parts of phosphoric acid evenly, slowly add 1.5 parts of ethyl acetoacetate dropwise for 15 minutes, heat up to 98°C, stir, condense and reflux, and react for 2.5 hours;

[0049] (2) filter in the funnel through filter paper, wash 4 times with deionized water;

[0050] (3) Transfer to a vacuum drying oven, and dry at 65°C for 8.5 hours to obtain product A;

[0051] (4) Mix and heat 0.7 parts of product A and 15 parts of tetrahydrofuran to 65°C, condense to reflux, and stir for 30 minutes;

[0052] (5) Cool down to 0°C, add 1 part of acryloyl chloride dropwise, fill with nitrogen after the dropwise addition, and stir for 1.5 hours;

[0053] (6) add deionized water, separate out white solid, wash 4 times with deionized water;

[0054] (7) Transfer to a vacuum drying oven, and dry at 65°C f...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention provides a preparation method of an environment-friendly photoresist. The method comprises the following steps that 3-aminophenol and phosphoric acid are stirred and mixed uniformly, ethyl acetoacetate is slowly added dropwise, temperature-rising stirring and condensation backflow are conduced, and a reaction is conducted; a mixture is filtered in a funnel through filtering paper andwashed; drying is conducted to obtain a product A; the product A and tetrahydrofuran are mixed and heated, and condensation backflow and stirring are conducted; cooling is conducted, acryloyl chloride is added dropwise, nitrogen is introduced after dropwise addition is completed, and a stirring reaction is conducted; deionized water is added, and white solids are precipitated and washed; drying is conducted to obtain a product B; the product B, hyperforin perforatum alkali, acrylic anhydride, N-acetylcysteine, casein, dithiothreitol, benzil dimethyl ether and ethanol are mixed and uniformly stirred in a dark environment, filter residues are removed through filtering, and the environment-friendly photoresist is obtained. The environment-friendly photoresist prepared by means of the methodis high in light transmittance, good in light transmittance performance, beneficial to application, high in graphic contrast ratio and high in resolution, and has a great photoetching effect.

Description

technical field [0001] The invention relates to a preparation method of an environment-friendly photoresist. Background technique [0002] Photolithography is one of the most critical and frequently used technologies in the field of microelectronics processing technology. The photolithography process is the process of transferring the pattern on the mask plate to the photoresist on the surface of the substrate. The photolithography process is an important link in the process of photoresist development and is indispensable. At the same time, photoresist is also a key material for UV imprinting, and its performance will affect the accuracy of imprinted pattern reproduction, pattern defect rate, and etch selectivity when the pattern is transferred to the substrate. At present, general photoresists are made of materials containing quinone azido compounds. After being exposed to light, photodecomposition reactions will occur, changing from oil-soluble to water-soluble, which ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): G03F7/027G03F7/004G03F7/028
CPCG03F7/027G03F7/004G03F7/028
Inventor 牛杰
Owner 嘉兴市海德姆智能电气有限公司
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com