High-efficiency deep-ultraviolet light-emitting diode based on h-bn electron blocking layer and its preparation method
A technology of electron blocking layer and light-emitting diode, which is applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve the problems of reduced reliability, low hole concentration, poor crystal quality, etc., to suppress current leakage, increase hole concentration, Effect of Reducing Current Leakage
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Embodiment 1
[0025] Example 1, preparing a deep ultraviolet light-emitting diode with an emission wavelength of 300 nm on a sapphire substrate.
[0026] In step one, the substrate is pretreated.
[0027] After the c-plane sapphire substrate is cleaned, it is placed in a metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of the reaction chamber is reduced to 120Torr; hydrogen gas is introduced into the reaction chamber, and the pressure of the MOCVD reaction chamber reaches 150Torr. , heating the substrate to a temperature of 900° C. and maintaining it for 10 minutes to complete the heat treatment of the substrate.
[0028] Step 2, growing n-type Al 0.35 Ga 0.65 N layers, such as figure 2 (a).
[0029] Place the pretreated substrate in the MOCVD equipment, set the temperature of the reaction chamber to 1100°C, and simultaneously feed ammonia gas with a flow rate of 25000 sccm, a silicon source with a flow rate of 2 sccm, a gallium source with a flow r...
Embodiment 2
[0036] Example 2, preparing a deep ultraviolet light-emitting diode with an emission wavelength of 260nm on a Si substrate
[0037] Step 1, pretreating the substrate.
[0038] After the Si substrate is cleaned, it is placed in a metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of the reaction chamber is reduced to 110Torr; hydrogen gas is introduced into the reaction chamber, and under the condition that the pressure of the MOCVD reaction chamber reaches 120Torr, the The substrate is heated to a temperature of 1200° C. and kept for 10 minutes to complete the heat treatment of the substrate.
[0039] Step 2, grow n-type Al 0.55 Ga 0.45 N layers, such as figure 2 (a).
[0040] n-type Al with a thickness of 1 μm was grown on the pretreated substrate using MOCVD equipment 0.55 Ga 0.45 N layer, the process conditions are as follows:
[0041] The temperature of the reaction chamber was 1150° C., the pressure was 250 Torr, the flow rate of...
Embodiment 3
[0056] Example 3, preparing a deep ultraviolet light-emitting diode with an emission wavelength of 210 nm on a SiC substrate.
[0057] Step A, pretreating the substrate.
[0058] After the SiC substrate is cleaned, it is placed in a metal organic chemical vapor deposition MOCVD reaction chamber, and the vacuum degree of the reaction chamber is reduced to 120Torr; The substrate is heated to a temperature of 1300° C. and maintained for 10 minutes to complete the heat treatment of the substrate.
[0059] Step B, grow n-type AlN layer, such as figure 2 (a).
[0060] On the pretreated substrate, the MOCVD equipment was used to grow n with a thickness of 6 μm under the process conditions of the reaction chamber temperature of 1200 ° C, pressure of 200 Torr, ammonia gas flow rate of 35000 sccm, silicon source flow rate of 6 sccm, and aluminum source flow rate of 1530 sccm. type AlN layer.
[0061] Step C, growing Al 0.9 Ga 0.1 N / AlN multiple quantum well structure, such as f...
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