Unlock instant, AI-driven research and patent intelligence for your innovation.

Strained germanium laser and manufacturing method thereof

A manufacturing method and laser technology, applied in the field of silicon photonics, can solve the problems of poor practicability and high optical loss of germanium lasers, and achieve the effects of reducing optical loss, reducing surface recombination, and improving stability and thermal conductivity.

Active Publication Date: 2019-02-26
HUAZHONG UNIV OF SCI & TECH
View PDF7 Cites 5 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Aiming at the defects of the prior art, the purpose of the present invention is to solve the technical problems of poor practicability and high optical loss of strained germanium lasers in the prior art

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Strained germanium laser and manufacturing method thereof
  • Strained germanium laser and manufacturing method thereof
  • Strained germanium laser and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Such as figure 2 As shown, the strained germanium laser is as follows from bottom to top: substrate layer 101, first bonding dielectric layer 102, second bonding dielectric layer 103, germanium layer, insulating dielectric layer 109, P electrode 108 and N electrode 106 , the germanium layer includes: a strained structure 104 , a ridge waveguide 105 , a rectangular grating 107 etched on the ridge waveguide, a P-type doped region 602 and an N-type doped region 603 .

[0056] The first bonding medium layer 102 is used to combine with the recessed part of the germanium layer to form a van der Waals bond, preferably aluminum oxide or silicon oxide, with a thickness of 300 nm˜1 μm.

[0057] The second bonding medium layer 103 is made of different bonding materials from the first bonding medium layer, and is used to support both ends of the germanium layer, and its thickness is less than 500 nm.

[0058] The germanium layer is used as the main body of the germanium laser, in...

Embodiment 2

[0072] Such as Figure 8 As shown, Embodiment 2 provides an improved strained germanium laser, which further improves the manufacturing process tolerance of the grating and the strain of the active region by deeply etching the arc-shaped grating. The strained germanium laser is as follows from bottom to top: a substrate layer 101, a first bonding dielectric layer 102, a second bonding dielectric layer 103, and a germanium layer.

[0073] The germanium layer is combined with the first bonding medium layer 102, so that the thermal conductivity of the active region and the reliability of the device can be improved. Such as Figure 9 As shown, the germanium layer is etched to form a strained structure with narrow middle and wide sides. Wherein, the narrow area is rectangular, and the wide area is designed as a tapered structure with a gradually changing width. Compared with the first embodiment, this graded structure can weaken the strain concentration effect at the junction of...

Embodiment 3

[0079] This embodiment provides a method for manufacturing a strained germanium laser, which is used to manufacture the strained germanium laser described in Embodiment 1. The method includes the following steps:

[0080] S1. Grow a first bonding dielectric layer of a first thickness on the substrate layer to obtain a first component, grow a second bonding dielectric layer of a second thickness on a germanium layer to obtain a second component, and clean the second component Bond the cleaned first component upside down to obtain the third component, and reduce the thickness of the third component to obtain the fourth component with the third thickness. The fourth component includes the substrate layer from bottom to top, and the first bond A bonding dielectric layer of silicon oxide, a second bonding dielectric layer of aluminum oxide and a germanium layer;

[0081] S2. Doping the germanium layer to form a P-type doped region and an N-type doped region;

[0082] S3. Etching t...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a strained germanium laser and a manufacturing method thereof. The strained germanium laser comprises a substrate layer, a first bonding dielectric layer, a second bonding dielectric layer, a germanium layer, an insulating dielectric layer, and a P electrode, and an N electrode from bottom to top in sequence. An intermediate recessed region of the germanium layer is integrated with the first bonding dielectric layer by bonding, and the second bonding dielectric layer supports both ends of the germanium layer. The first bonding dielectric layer and the second bonding dielectric layer are used, so that the strained germanium laser is a non-suspended structure, and the stability and thermal conductivity of the device are greatly improved compared to those of a laser ina suspended structure. The non-suspended structure makes the lower surface of an active region protected, surface recombination of charge carriers can be reduced, thereby improving luminous efficiency of the laser. Waveguide whose length is quarter-wave is reserved as a phase-shifting region, mode degeneration of an optical grating is broken, so light is lasing with a Bragg wavelength, thereby significantly increasing side-mode suppression ratio. The optical grating can further reduce optical loss.

Description

technical field [0001] The invention belongs to the technical field of silicon photonics, and more specifically relates to a strained germanium laser and a manufacturing method thereof. Background technique [0002] As a material fully compatible with CMOS process, germanium can be monolithically integrated with silicon, and high-performance photodetectors have been realized. The energy band structure of germanium is close to the direct band gap, and the energy difference between the direct conduction band Γ point and the indirect conduction band L point is only 136meV. More importantly, this energy difference can further shrink or even realize a direct bandgap under the action of tensile strain. Therefore, people have carried out a lot of research on the strain technology of germanium. [0003] In order to further realize the electrically driven strained germanium laser with low threshold current, the gain medium, the electric carrier injection structure and the optical r...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01S5/32H01S5/22H01S5/12
CPCH01S5/12H01S5/22H01S5/32
Inventor 孙军强江佳霖
Owner HUAZHONG UNIV OF SCI & TECH
Features
  • R&D
  • Intellectual Property
  • Life Sciences
  • Materials
  • Tech Scout
Why Patsnap Eureka
  • Unparalleled Data Quality
  • Higher Quality Content
  • 60% Fewer Hallucinations
Social media
Patsnap Eureka Blog
Learn More

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2025 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com