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A kind of etch-resistant photoresist, its preparation method and application, and photolithography method

A photoresist and photoresist layer technology, which can be applied to photomechanical equipment, photo-engraving process of pattern surface, photosensitive material used for optical mechanical equipment, etc., can solve the problems of long process time and high cost, and achieve good Light transmittance, high corrosion resistance, effect of reducing material cost

Active Publication Date: 2019-08-30
福建泓光半导体材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this process requires the use of CVD process in the process of forming the amorphous carbon layer and the silicon oxynitride layer, which requires the use of relatively expensive machines and raw materials, high cost and relatively long process time

Method used

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  • A kind of etch-resistant photoresist, its preparation method and application, and photolithography method
  • A kind of etch-resistant photoresist, its preparation method and application, and photolithography method
  • A kind of etch-resistant photoresist, its preparation method and application, and photolithography method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] This example is used to illustrate the photoresist provided by the present invention and its preparation method.

[0035] Raw materials: resin (composed of 5wt% unit monomer I, 30wt% unit monomer II and 65wt% unit monomer III, wherein the unit monomer I has a side chain shown in formula (1) containing A macromonomer of acrylate repeating chains of fullerenes, said unit monomer II is a macromonomer having a side chain shown in formula (2) containing acrylate repeating chains of hematoporphyrin monomethyl ether , the unit monomer III is t-butyl methacrylate, fullerene is C 60 , R 1 , R 2 and R 3 Both are hydrogen atoms, m is 20 and n is 30) 20wt%, photoacid generator (4,4'-dimethyldiphenyliodonium hexafluorophosphate) 60wt%, additive (polydimethylsiloxane oxane) 2wt% and solvent (cyclohexanone) 18wt%.

[0036] Add the above resin, photoacid generator, additive and solvent into a clean plastic container (250 milliliters of polypropylene plastic bottle), and fix the pl...

Embodiment 2

[0038] This example is used to illustrate the photoresist provided by the present invention and its preparation method.

[0039] Raw materials: resin (composed of 20wt% unit monomer I, 10wt% unit monomer II and 70wt% unit monomer III, wherein the unit monomer I has a side chain shown in formula (1) containing A macromonomer of acrylate repeating chains of fullerenes, said unit monomer II is a macromonomer having a side chain shown in formula (2) containing acrylate repeating chains of hematoporphyrin monomethyl ether , the unit monomer III is adamantyl methacrylate, fullerene is C 60 , R 1 , R 2 and R 3 Both are methyl, m is 10 and n is 50) 5wt%, photoacid generator (4,4'-dimethyldiphenyliodonium hexafluorophosphate) 85wt%, additive (polydimethylsiloxane oxane) 2wt% and solvent (diacetone alcohol) 8wt%.

[0040] Add the above resin, photoacid generator, additive and solvent into a clean plastic container (250 milliliters of polypropylene plastic bottle), and fix the plastic...

Embodiment 3

[0042] This example is used to illustrate the photoresist provided by the present invention and its preparation method.

[0043] Raw materials: resin (composed of 12wt% unit monomer I, 20wt% unit monomer II and 68wt% unit monomer III, wherein the unit monomer I has a side chain shown in formula (1) containing A macromonomer of acrylate repeating chains of fullerenes, said unit monomer II is a macromonomer having a side chain shown in formula (2) containing acrylate repeating chains of hematoporphyrin monomethyl ether , the unit monomer III is γ-butyrolactone methacrylate, fullerene is C 70 , R 1 , R 2 and R 3 Both are hydrogen atoms, m is 30 and n is 10) 15wt%, photoacid generator (4,4'-dimethyldiphenyliodonium hexafluorophosphate) 70wt%, additive (polydimethylsiloxane oxane) 3wt% and solvent (ethyl acetate) 12wt%.

[0044] Add the above resin, photoacid generator, additive and solvent into a clean plastic container (250 milliliters of polypropylene plastic bottle), and f...

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Abstract

The invention relates to the field of a semiconductor and an integrated circuit and discloses photoresist, preparation methods and application thereof and a photoetching method. The photoresist contains resin and photo acid generator. The resin contains 5-20wt% of unit monomer I, 10-30wt% of unit monomer II and 50-70wt% of unit monomer III. The unit monomer I is macromonomer with an acrylate repeating unit of which side chain contains fullerene, as shown by the following formula (1). The unit monomer II is macromonomer with the acrylate repeating unit of which side chain contains hematoporphyrin monomethyl ether, as shown by the following formula (2). The unit monomer III is the monomer capable of being copolymerized with the unit monomer I and the unit monomer II. R<1>, R<2> and R<3> arehydrogen atoms or alkyl of C<1>-C<5>, m is 10-30 and n is 10-50. According to the photoresist provided by the invention, an etching rate and groove filling capacity the same as those of amorphous carbon can be achieved; and in a forming process of a photoresist layer, a CVD table can be replaced by a spin coater of a photoetching technology, and cost is reduced. The formula (1) and the formula (2)are expressed.

Description

technical field [0001] The invention belongs to the field of semiconductors and integrated circuits, and in particular relates to an etching-resistant photoresist, a preparation method and application thereof, and a photolithography method. Background technique [0002] In semiconductor integrated circuits, ArF photoresist must be used when the lithographic line width is less than the critical level of 90nm. However, the etching resistance of ArF photoresist is not good, about 200nm per minute, and it is necessary to use about 500nm of amorphous carbon compound (a-carbon) and silicon oxynitride (SiON) as a hard mask (hard mask) layer to Protect the ArF photoresist, and then use the ArF anti-reflection layer to improve the resolution. Specific photolithography process such as figure 1 As shown in a, first, an amorphous carbon layer (a-carbon), a silicon oxynitride layer (SiON), an antireflection layer (BARC) and a patterned ArF photoresist layer (ArF PR) are sequentially fo...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/42G03F7/004G03F7/09G03F7/095
Inventor 肖楠宋里千
Owner 福建泓光半导体材料有限公司