An improved preparation process of synthetic diamond sintered body

An artificial diamond and improved technology, which is applied in the direction of metal material coating process, coating, gaseous chemical plating, etc., can solve the problems of reducing the overall hardness and wear ratio of the sintered body, single component, and loss of hardness of the sintered body. Achieve the effects of shortening the preparation time, improving the preparation efficiency and facilitating demoulding

Active Publication Date: 2021-01-05
ANHUI YAZHU DIAMOND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0015] The sintering time of the above-mentioned patent is too short, the hardness of the sintered body is lost, no catalyst is added, the sintering temperature is higher, and the thickness of the silicon carbide film in the pretreatment is larger, which leads to a decrease in the content of diamond components in the sintered body and reduces the overall strength of the sintered body. Hardness and wear ratio; the ratio of sintering aids is not optimized, and the composition is single, which also affects the density of the sintered body

Method used

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  • An improved preparation process of synthetic diamond sintered body
  • An improved preparation process of synthetic diamond sintered body

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment 1: prepare diamond sintered compact according to the following method:

[0044] (1) Sieve the diamond powder into three specifications of 15 μm, 25 μm, and 35 μm, mix it according to the weight ratio of 2:2:1, then purify the diamond powder, and place the diamond powder in NaOH and HCl solutions and boil for 25 minutes respectively , washed with distilled water until neutral, dried for later use;

[0045] (2) Fill gaseous methane silicon, diborane, and oxygen with a purity of 99.0% in a molar ratio of 2:1:10 at room temperature into a chemical vapor deposition equipment with a vacuum of 8Pa, so that the deposition pressure is 400Pa, and the deposition reaction temperature 350°C, deposition time 35min, chemical vapor deposition is carried out on the surface of artificial diamond powder to form B with a thickness of 5-10nm 2 o 3 ·SiO2 2 In the borosilicate oxide film, the mass fraction of germanium-silicon alloy in the diamond-coated micropowder is 0.5-2mass%....

Embodiment 2

[0051] Embodiment 2: prepare diamond sintered compact according to the following method:

[0052] (1) Sieve the diamond powder into three specifications of 15 μm, 25 μm, and 35 μm, mix it according to the weight ratio of 2:2:1, purify the diamond powder, and place the diamond powder in 4M NaOH and 1M HCl solution in sequence Boil them for 40 minutes, wash with distilled water until neutral, and dry for later use;

[0053] (2) Fill gaseous methane silicon, diborane, and oxygen with a purity of 99.99% in a molar ratio of 2:1:10 at room temperature into a chemical vapor deposition equipment with a vacuum of 8Pa, so that the deposition pressure is 800Pa, and the deposition reaction temperature 450°C, deposition time 55min, chemical vapor deposition is carried out on the surface of artificial diamond powder to form B with a thickness of 10-20nm 2 o 3 ·SiO2 2 The borosilicate oxide film, the mass fraction of germanium-silicon alloy in the diamond-coated micropowder is 2-4mass%. ...

Embodiment 3

[0059] Embodiment 3: prepare diamond sintered compact according to the following method:

[0060] (1) Sieve the diamond powder into three specifications of 15 μm, 25 μm, and 35 μm, mix it according to the weight ratio of 2:2:1, purify the diamond powder, and place the diamond powder in NaOH and HCl solutions in turn and boil for 30 minutes respectively , washed with distilled water until neutral, dried for later use;

[0061] (2) Fill gaseous methane silicon with a purity of 99.5%, diborane and oxygen in a molar ratio of 2:1:10 at room temperature into a chemical vapor deposition equipment with a vacuum of 8Pa, so that the deposition pressure is 600Pa and the deposition reaction temperature 400°C, deposition time 45min, chemical vapor deposition on the surface of artificial diamond powder to form B with a thickness of 8-15nm 2 o 3 ·SiO2 2 The borosilicate oxide film, the mass fraction of germanium-silicon alloy in the diamond-coated micropowder is 1.5-3mass%.

[0062] (3) ...

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Abstract

A process for preparing an improved synthetic diamond sintered body includes such steps as screening, matching, and purification on diamond micro powder, deposition of a boron silicon oxide film, binder matching, ionizing plasma sintering, etc. The invention effectively reduces the requirement of high temperature and high pressure in the prior preparation technology, shortens the preparation time,improves the preparation efficiency of the synthetic diamond sintered body, reduces the preparation energy consumption, greatly improves the hardness and the wear ratio of the sintered product, and improves the quality of the product.

Description

technical field [0001] The invention relates to the preparation of a diamond sintered body, in particular to an improved preparation process of an artificial diamond sintered body. Background technique [0002] Synthetic diamond sintered body (referred to as PCD) is another important achievement after the successful development and application of synthetic diamond. Since the synthetic diamond sintered body not only has the characteristics of high thermal conductivity, high hardness, and high wear resistance inherent in diamond, but also has the characteristics that diamond single crystals do not have, such as isotropy, high toughness, and high oxidation resistance. It was quickly applied in cutting tools, drilling, wire drawing, dressing tools, and wear-resistant devices. Depending on the purpose, there are triangles, cylinders, flakes, cones, and tapered shapes. [0003] In the growth mechanism of general PCD, it can be roughly divided into three types: growth type, sinte...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B22F5/00B22F1/00B22F3/105C23C16/40C23C16/44
CPCB22F1/0003B22F3/105B22F5/00B22F2003/1051B22F2005/001B22F2998/10C23C16/40C23C16/4417
Inventor 侯大伟
Owner ANHUI YAZHU DIAMOND
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