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Cavity film bulk acoustic resonator capable of increasing q value and preparation method thereof

A bulk acoustic wave resonator, cavity film technology, applied in impedance networks, electrical components, etc., can solve the problems of increasing FBAR insertion loss, reducing energy conversion efficiency, reducing quality factor Q value, etc., to slow down overheating phenomenon, reduce Energy loss, thermal stress reduction effect

Active Publication Date: 2020-12-01
武汉敏声新技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among them, the sound wave in the transverse vibration mode causes the loss of sound wave energy, reduces the energy conversion efficiency, increases the insertion loss of FBAR, and reduces the quality factor Q value

Method used

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  • Cavity film bulk acoustic resonator capable of increasing q value and preparation method thereof
  • Cavity film bulk acoustic resonator capable of increasing q value and preparation method thereof
  • Cavity film bulk acoustic resonator capable of increasing q value and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] Such as figure 1 As shown, the cavity thin film bulk acoustic resonator 10 capable of improving the Q value provided by the first embodiment includes a substrate 11 , a SiC / Diamond thin film layer 12 and a piezoelectric oscillator stack 13 . The middle of the substrate 11 has a groove opening upwards. The SiC / Diamond thin film layer 12 is formed on the substrate, and a through opening corresponding to the groove is provided in the middle, and the size of the through opening is consistent with the groove. The piezoelectric oscillator stack part 13 is formed on the SiC / Diamond thin film layer 12 and is located directly above the through opening; the piezoelectric oscillator stack part 13 includes bottom electrode 13a, piezoelectric layer 13b, and top electrode 13c in order from bottom to top. The groove on the substrate 11 , the through opening on the SiC / Diamond thin film layer 12 , and the piezoelectric oscillator stack 13 together define a cavity 14 . Four release ho...

Embodiment 2

[0037] Such as figure 2 As shown, the cavity film bulk acoustic resonator 20 capable of improving the Q value provided by the second embodiment includes a substrate 21 , a SiC / Diamond film layer 22 and a piezoelectric oscillator stack 23 . The middle of the substrate 21 has a groove opening upwards. The SiC / Diamond thin film layer 22 is formed on the substrate, and a through opening corresponding to the groove is provided in the middle, and the size of the through opening is consistent with the groove. The piezoelectric oscillator stack part 23 is formed on the SiC / Diamond thin film layer 22 and is located directly above the through hole; the piezoelectric oscillator stack part 23 includes bottom electrode 23a, piezoelectric layer 23b, and top electrode 23c in order from bottom to top. The groove on the substrate 21 , the through hole on the SiC / Diamond thin film layer 22 , and the piezoelectric oscillator stack 23 together define a cavity 24 . Four release holes 25 are uni...

Embodiment 3

[0040]The third embodiment provides a method for preparing a cavity film bulk acoustic resonator that can improve the Q value. Here, the resonator in the first embodiment is taken as an example for illustration, and specifically includes the following steps:

[0041] 1) if image 3 As shown, a silicon substrate 11 is prepared;

[0042] 2) if Figure 4 As shown, a SiC / Diamond film layer 12 is grown on a silicon substrate 11;

[0043] 3) if Figure 5 As shown, a preset through hole 12a is etched on the SiC / Diamond film layer 12:

[0044] 4) if Figure 6 As shown, a preset groove 11a is etched on the silicon substrate 11;

[0045] 5) if Figure 7 As shown, a sacrificial layer A is deposited on the SiC / Diamond thin film layer 12 and in the groove 11a. The chemical properties of the material of the sacrificial layer A are different from those of the silicon substrate 11, ensuring that the substrate will not be affected during subsequent etching;

[0046] 6) If Figure 8 As ...

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Abstract

The present invention provides a cavity film bulk acoustic wave resonator capable of improving a Q value and a preparation method thereof. A cavity film bulk acoustic wave resonator capable of improving a Q value provided by the present invention, including: a substrate having a groove with an upward opening in a middle portion of the substrate; a SiC / Diamond film layer formed on the substrate, and a middle portion of the film layer is provided with a through hole corresponding to the groove; and a piezoelectric oscillating stack formed on the SiC / Diamond film layer and located directly abovethe through-hole, including: a bottom electrode, a piezoelectric layer, and a top electrode from bottom to top. In the present invention, characteristics of fast sound wave propagation speed and highhardness of the SiC / Diamond film layer are utilized, so that a sound wave of a transverse vibration mode generated in the piezoelectric film can be well suppressed. In addition, mechanical damping introduced by the soft substrate can be reduced, energy loss of the sound wave is reduced, insertion loss of the film bulk acoustic resonator is reduced, and a high Q value and an electromechanical coupling coefficient are obtained.

Description

technical field [0001] The invention belongs to the field of sensor preparation, and in particular relates to a cavity film bulk acoustic wave resonator capable of improving the Q value and a preparation method thereof. [0002] technical background [0003] With the rapid development of wireless communication, wireless signals are becoming more and more crowded, and new requirements such as integration, miniaturization, low power consumption, high performance, and low cost are put forward for filters working in the radio frequency band. Traditional surface acoustic wave filters are increasingly unable to meet such technical indicators due to limitations in frequency and power. Film Bulk Acoustic Resonator (FBAR) has gradually become a hot spot in the research of RF filters due to its characteristics of CMOS process compatibility, high quality factor (Q value), low loss, low temperature coefficient, and high power carrying capacity. [0004] Film Bulk Acoustic Wave Resonator...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H03H3/02H03H3/04
CPCH03H3/02H03H3/04H03H2003/023H03H2003/0407
Inventor 谢英刘胜蔡耀邹杨周杰刘婕妤孙成亮
Owner 武汉敏声新技术有限公司
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