A kind of crn coating, preparation method and application
A technology of coating and transition layer, applied in coating, metal material coating process, vacuum evaporation plating, etc., can solve the problem of low hardness of CrN coating, and achieve the effect of improving hardness
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[0032] The present invention also provides a method for preparing the above-mentioned CrN coating, comprising the following steps:
[0033] Step A, performing plasma cleaning on the surface of the substrate.
[0034] Specifically, the vacuum chamber is first evacuated to a vacuum degree ≤ 10 -4 Pa, then pass in an inert gas (such as Ar gas or a mixture of two or more inert gases), keep the pressure of the vacuum chamber at 0.5-5Pa, and use a gas ion source to conduct plasma on the substrate under the action of the second bias Etching and cleaning to eliminate organic matter adsorbed on the surface of the substrate, the discharge power is preferably 0.5-5kW, the second bias voltage is a DC bias voltage, the bias voltage is preferably 400V-1200V, and the etching time can be 5-30min. Wherein, the gas ion source is preferably an anode layer ion source, which is generated by a gas plasma generator, and may be a Hall ion source or a Kaufmann ion source.
[0035] Step B. Under an ...
Embodiment 1
[0044] 1) Vacuumize the vacuum chamber of the magnetron sputtering equipment through the pumping system to make the vacuum of the back and bottom reach 10 -4 Pa.
[0045] 2) Gas plasma cleaning Introduce Ar gas into the vacuum chamber to keep the vacuum chamber pressure at about 1Pa, use the anode layer ion source to perform plasma etching cleaning on the substrate under the action of bias voltage, and eliminate the organic matter adsorbed on the surface of the substrate , the power of the anode layer ion source is 1kW, the bias voltage is DC bias voltage, the magnitude is 600V, and the etching time is 20min.
[0046] 3) Preparation of Cr transition layer A cylindrical metal plasma source is used to perform HiPIMS discharge on the Cr target. The purity of the Cr target is 99.9%-99.99%. The HiPIMS discharge voltage is 900V, the frequency is 100Hz, the pulse width is 200μs, and at low bias The Cr transition layer is deposited under the cooperation of , the bias voltage is DC b...
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