Electroluminescent device based on ZnO film co-doped by erbium and fluorine and preparation method

An electroluminescent device and co-doping technology, which is applied in the field of optoelectronics, can solve the problems of complex device structure and harsh heat treatment conditions, and achieve the effect of simple and easy-to-operate preparation method

Active Publication Date: 2019-03-22
ZHEJIANG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Yang Yang and others also tried to use n + - Depositing ZnMgO/ZnO multilayer structure on Si, successfully prepared ZnMgO/ZnO/n + -Si multilayer structure device (Yang Yang, Yunpeng Li, Canxing Wang, Chen Zhu

Method used

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  • Electroluminescent device based on ZnO film co-doped by erbium and fluorine and preparation method
  • Electroluminescent device based on ZnO film co-doped by erbium and fluorine and preparation method
  • Electroluminescent device based on ZnO film co-doped by erbium and fluorine and preparation method

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0040] Example 1

[0041] (1) Take the size as 15×15mm 2 N-type Silicon epitaxial wafer (heavy phosphorus-doped silicon wafer (resistivity 0.0011-0.0012Ω·cm, thickness ~ 625μm) epitaxial lightly phosphorus-doped silicon epitaxial layer (3-15Ω·cm, thickness ~ 45μm)) as the silicon substrate, After cleaning, place the silicon wafer in the RF sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 5×10 -3 After Pa, pass in high purity O 2 Gas and high purity Ar gas (flow rate ratio O 2 :Ar=1:2) to air pressure 4Pa, use 1% ErF mixed in mole percentage 3 The ZnO ceramic target was sputtered to deposit the film, and the applied power was 120W; during the deposition process, the temperature of the silicon substrate was kept at 100°C and the deposition time was 40min;

[0042] (2) Put the deposited film on O 2 In a gas atmosphere, heat treatment at 700°C for 120 minutes to finally form a ZnO film co-doped with Er and F. The film thickness is ~120nm. In atomic perce...

Example Embodiment

[0055] Example 2

[0056] (1) Take the size as 15×15mm 2 N-type Silicon epitaxial wafer (heavy phosphorus-doped silicon wafer (resistivity 0.0011-0.0012Ω·cm, thickness ~ 625μm) epitaxial lightly phosphorus-doped silicon epitaxial layer (3-15Ω·cm, thickness ~ 45μm)) as the silicon substrate, After cleaning, place the silicon wafer in the RF sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 5×10 -3 After Pa, pass in high purity O 2 Gas and high purity Ar gas (flow rate ratio O 2 :Ar=1:2) to air pressure 4Pa, use 1% ErF mixed in mole percentage 3 The ZnO ceramic target was sputtered to deposit the film, and the applied power was 120W; during the deposition process, the temperature of the silicon substrate was kept at 100°C and the deposition time was 40min;

[0057] (2) Put the deposited film on O 2 In a gas atmosphere, heat treatment at 800°C for 120 minutes to finally form a ZnO film co-doped with Er and F. The film thickness is ~120nm. In atomic perce...

Example Embodiment

[0069] Example 3

[0070] (1) Take the size as 15×15mm 2 N-type Silicon epitaxial wafer (heavy phosphorus-doped silicon wafer (resistivity 0.0011-0.0012Ω·cm, thickness ~ 625μm) epitaxial lightly phosphorus-doped silicon epitaxial layer (3-15Ω·cm, thickness ~ 45μm)) as the silicon substrate, After cleaning, place the silicon wafer in the RF sputtering chamber, and use a vacuum pump to pump the pressure in the chamber to 5×10 -3 After Pa, pass in high purity O 2 Gas and high purity Ar gas (flow rate ratio O 2 :Ar=1:2) to air pressure 4Pa, use 1% ErF mixed in mole percentage 3 , 2% Er 2 O 3 The ZnO ceramic target was sputtered to deposit the film, and the applied power was 120W; during the deposition process, the temperature of the silicon substrate was kept at 100°C and the deposition time was 40min;

[0071] (2) Put the deposited film on O 2 In the atmosphere, heat treatment at 700℃ for 120min, finally forming a ZnO film co-doped with Er and F, the film thickness is ~120nm, the dopi...

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Abstract

The invention discloses an electroluminescent device based on a ZnO film co-doped by erbium and fluorine, a preparation method and a light emitting method, and belongs to the field of optoelectronic technologies. The electroluminescent device comprises an epitaxial silicon substrate, wherein the front of the silicon substrate is sequentially provided with a light emitting layer and a transparent electrode layer, the back of the silicon substrate is provided with an ohmic contact electrode, and the light emitting layer is a ZnO film co-doped by erbium and fluorine. The electroluminescent devicecan emit light under 6-10V forward bias voltage, that is, the Au ohmic contact electrode is connected to the negative voltage, and the ITO transparent electrode layer is connected to the positive voltage. In addition, there is only a characteristic luminescent peak of erbium ions located in a visible region and an infrared region but no characteristic luminescent peak related to a ZnO matrix in the electroluminescent spectrum.

Description

technical field [0001] The invention relates to the field of optoelectronic technology, in particular to an electroluminescence device based on erbium and fluorine co-doped ZnO thin film and a preparation method thereof. Background technique [0002] Rare earth-doped oxide luminescent materials have important applications in many fields such as flat display, laser materials and optical fiber communication. Because Er 3+ The luminescent wavelength of the 4f electron transition in the inner layer of the ion is ~1.54 μm, which is located in the minimum loss window of the silica optical fiber for optical communication. Therefore, the study of Er-doped materials is of great significance for the realization of silicon-based optoelectronic integration. All the time, people focus on Er-doped silicon oxide (A.Irrera, F.Iacona, G.Franzo, M.Miritello, R.L.Savio, M.E.Castagna, S.Coffa, and F.Priolo, J.Appl .Phys.107,054302(2010)), silicon nitride (S.Yerci,R.Li,and L.Dal Negro,Appl.Phy...

Claims

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Application Information

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IPC IPC(8): H01L33/28H01L33/00
CPCH01L33/0087H01L33/285
Inventor 马向阳陈金鑫杨德仁
Owner ZHEJIANG UNIV
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