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Preparation method of carbon nanometer film/nano-micrometer network composite film

A technology of carbon nano-film and network compounding, applied in gaseous chemical plating, metal material coating process, coating, etc., can solve the problems of incomplete coordination of neighbors, high equipment requirements, high decomposition temperature, etc., to reduce time and expand The effect of applying the foreground

Inactive Publication Date: 2019-03-29
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the very strong carbon-hydrogen bonds of methane, its decomposition temperature is very high, even in the presence of a catalyst substrate (such as copper), its decomposition temperature is often around 1000 °C
In addition, we know that there are many differences in physical and chemical properties between nanomaterials and bulk materials. The number of atoms is large and the coordination of the neighbors is incomplete. These factors lead to a lower melting point than the bulk material, so it is easy to melt or decompose by itself when the temperature is high, and even react with the catalyst substrate. Therefore, the growth of carbon nanofilms is carried out at the above high temperature. Undoubtedly, it will reduce the properties of the original nano-micro network film, resulting in the loss of the performance of the final composite film
At the same time, high temperature increases the cost and difficulty of growth, and the requirements for equipment are also very high, which is not conducive to large-scale production
At the same time, the high-temperature process also brings great difficulties to the direct growth of composite thin films on flexible substrates.

Method used

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  • Preparation method of carbon nanometer film/nano-micrometer network composite film
  • Preparation method of carbon nanometer film/nano-micrometer network composite film
  • Preparation method of carbon nanometer film/nano-micrometer network composite film

Examples

Experimental program
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Effect test

Embodiment 1

[0159] Step 1: After the purchased high-purity copper foil is electrochemically polished, wash off the residual electrolyte on the high-purity copper foil with deionized water, and wash it in acetone, alcohol, and deionized water 2-3 times, each time 10 Minutes, dry the copper foil with nitrogen.

[0160] Step 2: Put the copper foil into a tube furnace, and anneal at high temperature under the protection of hydrogen and argon. After the annealing is completed, cool with the furnace and take out the copper foil to obtain the first substrate. In this embodiment, the flow rate of hydrogen gas is preferably 30 sccm, the flow rate of argon gas is 300 sccm, the annealing temperature is 1020° C., and the annealing time is 1 h.

[0161] Step 3: spread the self-supporting carbon nanotube film prepared by the CVD method on the first substrate, and infiltrate it with alcohol. In this embodiment, the thickness of the carbon nanotube film is 10 nm, and the pores range from 100 nm to 1000 n...

Embodiment 2

[0169] Step 1-3 is identical with step 1-3 in embodiment 1;

[0170] Step 4: Spin-coat the PMMA solution on the first substrate with the carbon nanotube film attached, and place it at one end of the quartz tube (non-growth temperature zone). In this embodiment, the spin coating speed is 4000r / min;

[0171] Step 5: Introduce cleaning gas into the reaction chamber until the air in the chamber is completely removed; in this embodiment, 500 sccm high-purity argon is preferably used as the cleaning gas, and the cleaning time is 10 minutes.

[0172] Step 6: After the cleaning is completed, adjust the flow meter and raise the temperature to T1 under the atmosphere of hydrogen and argon. After the temperature is stabilized, the carbon nanotube film / first substrate spin-coated with PMMA is moved to the growth temperature zone of the tube furnace, and the temperature is rapidly raised to T1, and the growth time is t1. In this embodiment, the flow rate of hydrogen gas is 30 sccm, the f...

Embodiment 3

[0176] The copper foil in Example 1 is replaced by a copper-nickel alloy, and the preparation method of the copper-nickel alloy is as follows: the high-purity copper foil after the annealing treatment is used as the cathode (25 μm in this embodiment), and the high-purity nickel plate is used as the anode. Electroplating 2-5μm nickel film on copper foil, the electroplating solution used is a mixture of 250g / L nickel sulfate hexahydrate, 50g / L boric acid, 50g / L nickel chloride hexahydrate and 0.1g / L sodium lauryl sulfate solution, the electroplating current is set to 0.01A / cm2, and the electroplating time is set to 5 minutes to 30 minutes. After electroplating, the copper / nickel foil plate is heat-treated at 1000° C. for 2 hours in an atmosphere of argon and hydrogen to form a copper-nickel alloy.

[0177] Subsequent steps are the same as in Example 1.

[0178] Example results: the graphene / carbon nanotube composite film is finally obtained, and the graphene / carbon nanotube com...

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Abstract

The invention provides preparation method of a carbon nanometer film / a nano-micrometer network composite film, and relates to technical field of nanometer materials and preparation of the nanometer materials. A carbon source is subjected to chemical gaseous phase pyrolysis, holes of a nano-micrometer network are filled with the carbon nanometer film grown at the low temperature, and the surface ofthe nano-micrometer network is not covered, and the composite film is formed. The holes of the nano-micrometer network on a catalyst substrate are filled with the carbon nanometer film grown at the low temperature, and the self-supporting composite film can be formed through separation. The preparation method of the carbon nanometer film / the nano-micrometer network composite film comprises a carbon source and nano-micrometer network in-situ contact method, a carbon source and nano-micrometer network in-situ non-contact method and a carbon source and nano-micrometer network non-in-situ low-temperature transmission method. According to the preparation method, production steps are simplified, the production cost is greatly lowered, and the preparation method has industrialization prospects.

Description

technical field [0001] The invention relates to the technical field of nanomaterials and their preparation, in particular to a method for preparing a carbon nanofilm / nano-micro network composite film. Background technique [0002] Since Feynman put forward such forward-looking ideas as "small is different" and "there is still a lot of room at the bottom", nanotechnology has been greatly researched and developed. With the rapid development of science and technology and the continuous improvement of people's living standards, it has become the general trend to develop devices in the direction of flexibility, light weight and small size. Nanomaterials just meet these application requirements. Different applications based on nanomaterials are playing an increasingly important role in people's daily life and high-tech fields. [0003] Carbon nanofilm refers to two-dimensional nanomaterials mainly composed of carbon atoms, represented by graphene. Since graphene was first prepare...

Claims

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Application Information

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IPC IPC(8): C23C16/26C23C16/01C23C16/04
CPCC23C16/26C23C16/01C23C16/042
Inventor 肖仕奇周维亚夏晓刚王艳春解思深
Owner INST OF PHYSICS - CHINESE ACAD OF SCI
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