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N-type polysilicon crystal and manufacturing method thereof, and N-type polysilicon wafer

A manufacturing method, polysilicon technology, applied in crystal growth, polycrystalline material growth, final product manufacturing, etc., can solve the problems of low conversion efficiency and low production yield of P-type polysilicon, and achieve high quality, excellent conversion efficiency, high resistance evenly distributed effect

Inactive Publication Date: 2019-04-02
SINO AMERICAN SILICON PROD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the low conversion efficiency of P-type polysilicon, it is difficult to compete with single crystals and maintain the market share of polysilicon. Therefore, it is urgent to develop N-type polysilicon with significantly higher conversion efficiency
[0005] However, the current N-type polysilicon die has a wide distribution of resistance, which leads to the problem of low production yield

Method used

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  • N-type polysilicon crystal and manufacturing method thereof, and N-type polysilicon wafer
  • N-type polysilicon crystal and manufacturing method thereof, and N-type polysilicon wafer
  • N-type polysilicon crystal and manufacturing method thereof, and N-type polysilicon wafer

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Experimental program
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preparation example Construction

[0054] According to the preparation method of the first embodiment, the grown N-type polysilicon crystal grown by DSS has a resistivity slope and a defect area ratio slope. When the unit of the abscissa axis is curing fraction and the unit of ordinate axis is ohm·centimeter (Ω·cm), the resistivity slope is 0 to -1.8 when the curing fraction is 0.25˜0.8. When the unit of the horizontal axis of the coordinate is the solidification fraction and the unit of the vertical axis of the coordinate is the proportion of defect area (%), the slope of the proportion of the defect area when the solidification fraction is 0.4-0.8 is less than 2.5.

[0055] In this paper, "solidified fraction" refers to the ratio of the height of the solidified part in the crystal growth direction V to the total height of the silicon crystal during the solidification process of the N-type polysilicon crystal. The earlier the solidification fraction of the crystal is, the smaller the solidification fraction is...

experiment example 1

[0061] Silicon materials and dopants (gallium particles and phosphorus doped sheets) such as figure 1 Placed in a graphite crucible, the position of the dopant is set in the area of ​​0.25H from the bottom of the crucible, wherein the doping amount of gallium is 1.953ppma, and the doping amount of phosphorus is 0.180ppma. The atomic ratio of gallium and phosphorus is 10.85.

[0062] Raise the temperature above 1414°C without the cover to allow the silicon to start melting. When the temperature rises to 1500°C ~ 1570°C, the silicon material will completely melt into a silicon melt, and then grow crystals through temperature control. The initial temperature of crystal growth is set at 1385°C to 1430°C, and the final temperature is set at 1385°C to 1400°C. After the crystal growth is completed, the annealing and cooling processes are completed in sequence, and what is grown is an n-type polysilicon crystal.

experiment example 2

[0064] The same crystal growth steps and dopant placement as in Experimental Example 1 were adopted, but the doping amounts of gallium and phosphorus were changed to 0.632ppma and 0.044ppma, respectively. The atomic ratio of gallium and phosphorus is 14.36. What is grown is an n-type polysilicon crystal.

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Abstract

An N-type polysilicon crystal, a manufacturing method thereof, and an N-type polysilicon wafer are provided. The N-type polysilicon crystal has a slope of resistivity and a slope of defect area percentage. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to resistivity presented by a unit of Ohm.cm ([omega].cm), the slope of resistivity is 0 to -1.8 atthe solidified fraction of 0.25 to 0.8. When the horizontal axis is referred to solidified fraction and the vertical axis is referred to defect area percentage (%), the slope of defect area percentageis less than 2.5 at the solidified fraction of 0.4 to 0.8.

Description

technical field [0001] The invention relates to an N-type polysilicon crystal growth technology, in particular to an N-type polysilicon crystal, a manufacturing method thereof and an N-type polysilicon wafer. Background technique [0002] A solar cell is a photoelectric element that absorbs sunlight and converts it into electricity using the photovoltaic effect to generate electricity. At present, most of the solar cell materials are mainly silicon, such as monocrystalline silicon, polycrystalline silicon or amorphous silicon. [0003] Using polycrystalline silicon as the raw material of solar cells is relatively cheaper than monocrystalline silicon produced by the existing crystal pulling method (CZ method) and floating zone method (FZ method). [0004] Generally, polysilicon growth is mainly based on casting, and most of the polysilicon used in solar cells is P-type polysilicon. However, due to the low conversion efficiency of P-type polysilicon, it is difficult to compe...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/06
CPCC30B28/06C30B29/06H01L31/182H01L31/03682C30B11/00H01L29/32Y02E10/546Y02P70/50H01L29/045H01L29/167H01L29/04
Inventor 翁敬闳杨承叡杨瑜民张元啸王柏凯余文怀施英汝许松林
Owner SINO AMERICAN SILICON PROD
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