Infrared detector based on hybrid plasmon resonance enhancement

A plasmon resonance and infrared detector technology, applied in the field of infrared detectors, can solve the problems of high cost of photodetector preparation, difficulty in modulation of absorption band, low light absorption, etc., and achieve the effect of easy preparation, high responsivity, and enhanced absorption

Active Publication Date: 2019-04-19
SUZHOU UNIV
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Problems solved by technology

[0006] In order to solve the problems of relatively high preparation cost, low light absorption and difficult modulation of absorption bands in the prior art, the present invention adopts the following technical solution: an infrared detector based on hybrid plasmon resonance enhancement , the infrared detector is a composite layer structure, and the bottom metal film layer, the middle semiconductor layer and the top metal micro-nanohole array layer are arranged sequentially on the substrate from bottom to top; wherein the bottom metal film layer and the top metal micro-nanohole array layer The array layers are connected by wires, and the electrode wires are respectively drawn out from the bottom metal film layer and the middle semiconductor layer

Method used

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  • Infrared detector based on hybrid plasmon resonance enhancement
  • Infrared detector based on hybrid plasmon resonance enhancement
  • Infrared detector based on hybrid plasmon resonance enhancement

Examples

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Embodiment 1

[0044] to combine figure 1 As shown, the infrared detector based on hybrid plasmon resonance enhancement provided in this embodiment uses a substrate 11 (the material is silicon / silicon dioxide, the thickness of silicon dioxide is 100~300 nm, and the thickness of silicon is 200 nm. ~600 mm), the bottom metal film 12 (made of gold, with a thickness of 100 nm), the middle semiconductor layer 13 (made of zinc oxide, with a thickness of 50 nm), and the top layer of metal nanopores are sequentially arranged on the substrate 11 from bottom to top. The array layer 14 (made of gold with a thickness of 40 nm) also includes electrode wires 101 drawn out from the top and bottom metal film layers, and electrode wires 102 drawn out from the middle semiconductor layer, and the wires are respectively used as output ports of the detector . Through numerical simulation calculations, when the center-to-center distance between two adjacent nanoholes in the top metal layer is 600 nm and the dia...

Embodiment 2

[0054] Its structure see figure 1 , the same as in Example 1, except that the distance between the centers of two adjacent holes of the top metal nanohole array is changed from 600 nm in Example 1 to 1000 nm, and the middle semiconductor layer is changed from 50 nm zinc oxide in Example 1. 30nm titanium dioxide. By changing the process parameters of the ion etching system, the diameters of polystyrene spheres were reduced from 1000 nm to 820 nm, 770 nm, 700 nm and 600 nm, respectively.

[0055] Among them, the top-view SEM image of the device prepared when the diameter of the polystyrene sphere is reduced to 770 nm is shown in the attached Figure 6 shown.

[0056] The reflection spectrum curve 71 with a nanopore diameter of 820 nm, the reflection spectrum curve 72 with a nanopore diameter of 770 nm, the reflection spectrum curve 73 with a nanopore diameter of 700 nm, and the reflection spectrum curve with a nanopore diameter of 600 nm prepared in this example Reflectance ...

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Abstract

The invention belongs to the field of photoelectric detection and sensing technology, and proposes an infrared detector based on hybrid plasmon resonance enhancement to solve the problems that the preparation cost of the metal absorption-based photodetector in the prior art is high, the light absorption is not high, and the absorption band modulation is difficult. A composite structure of a metalmicro-nano hole array layer / semiconductor film / metal film is used for constructing the infrared detector based on hybrid plasmon resonance enhancemen; local plasmon resonance of the top metal micro-nano hole array, surface plasmons of the bottom layer metal film, and hybrid plasmon resonance formed by coupling the local plasmon resonance and the surface plasmons are extracted to greatly increase the absorption of incident light by the metal; the hot carriers generated by light absorption by the upper and lower layers of metal are injected into the intermediate semiconductor layer so that considerable optical responsivity is obtained; and tunable spectral absorption from near infrared to mid infrared can be achieved by adjusting the period and diameter of the top layer micro-nano holes, andthe thickness and refractive index of the intermediate semiconductor layer.

Description

technical field [0001] The invention belongs to the technical field of photoelectric detection and sensing, and relates to an infrared detector. Background technique [0002] The development of infrared detectors is the forerunner of the development of infrared technology, and the technical level of a country's infrared detectors represents the level of its infrared technology development. In recent decades, infrared technology has been used in a wide range of applications, such as reconnaissance, night vision, guidance, meteorology, landforms, environmental monitoring, remote sensing, thermal imaging, and spectroscopy. With the broadening of application fields, people have higher demands on the range of infrared detection bands. In order to promote the development of infrared technology, developed countries such as Europe and the United States have taken the lead in launching the seamless spectrum band detection plan, and have made important progress in the detection of lo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/108H01L31/18
CPCH01L31/108H01L31/18Y02P70/50
Inventor 吴绍龙丁浩徐玉亭眭博闻张程秦琳玲李孝峰
Owner SUZHOU UNIV
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