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Graphene strip with neat edges, preparation method and applications thereof

A graphene and edge technology, which is applied in the field of graphene strip preparation, can solve the problems of uneven edges, uncontrollable width, and difficult positioning of strips, and achieves the effect of reducing scattering, maintaining intrinsic properties, and improving performance.

Active Publication Date: 2019-05-07
SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the strips prepared by these methods have the disadvantages of irregular edges, relatively complicated process, uncontrollable strip length and width, and difficult positioning.

Method used

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  • Graphene strip with neat edges, preparation method and applications thereof
  • Graphene strip with neat edges, preparation method and applications thereof
  • Graphene strip with neat edges, preparation method and applications thereof

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preparation example Construction

[0023] As an aspect of the technical solution of the present invention, what it relates to is a kind of preparation method of the graphene strip with neat edges, and it comprises:

[0024] Photolithographic patterning of graphene;

[0025] growing a metal film on the patterned graphene, followed by removing the metal film;

[0026] The patterned graphene is subjected to hydrogen plasma etching treatment to obtain graphene strips with neat edges (also called graphene nano strips).

[0027] In some more specific embodiments, the preparation method further includes: before performing photolithographic patterning, first transferring the graphene onto the substrate.

[0028] Specifically, the preparation method includes: using ordinary photolithography or electron beam lithography to pattern, transfer graphene to the substrate, and then use photolithography or electron beam lithography to expose the required pattern, and the size of the pattern can be in the range of nanometers. ...

Embodiment 1

[0057] The method for preparing the graphene strips with neat edges in the present embodiment may further comprise the steps:

[0058] (1) The substrate material is a silicon wafer with 300nm silicon dioxide grown by thermal oxidation, and the graphene is migrated after the substrate is cleaned.

[0059] (2) Ordinary lithography or electron beam lithography, glue the sample with graphene migrated on the substrate, and then use photolithography or electron beam lithography to expose the required graphics. The size of the graphics can be in nanoscale or in micron scale.

[0060] (3) Growth of metal film: use magnetron sputtering to grow zinc with a thickness of 20 nm on the sample after photolithography and development.

[0061] (4) Hydrogen plasma etching: at room temperature, using pure hydrogen plasma, the power is set to 50W, the flow rate is 100SCCM, the pressure is 600Pa, and the etching time is 5 minutes. During the etching process, a vacuum pump is used to keep the cav...

Embodiment 2

[0063] The method for preparing the graphene strips with neat edges in the present embodiment may further comprise the steps:

[0064] (1) The substrate material is a silicon wafer with 100nm silicon dioxide grown by thermal oxidation, and the graphene is migrated after the substrate is cleaned.

[0065] (2) Ordinary lithography or electron beam lithography, glue the sample with graphene migrated on the substrate, and then use photolithography or electron beam lithography to expose the required graphics. The size of the graphics can be in nanoscale or in micron scale.

[0066] (3) Growth of the metal film: Magnesium with a thickness of 1 nm was grown on the sample after photolithography and development by using magnetron sputtering.

[0067] (4) Hydrogen plasma etching: at room temperature, using pure hydrogen plasma, the power is set to 100W, the flow rate is 10SCCM, the pressure is 60Pa, and the etching time is 60 minutes. During the etching process, a vacuum pump is used ...

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Abstract

The invention discloses a graphene strip with neat edges, a preparation method and applications thereof. The preparation method comprises: carrying out lithographic patterning on graphene, growing a metal film on the patterned graphene, removing the metal film, and carrying out hydrogen plasma etching on the patterned graphene to obtain the graphene strip with the neat edges. According to the present invention, the metal grows on the unprotected graphene to generate a large amount of defects so as to greatly increase the etching rate, and then the graphene is subjected to anisotropic etching by the hydrogen plasma, such that the finally obtained graphene strip has the geometry structure mainly based on the zigzag edges so as to make the obtained graphene strip has high carrier mobility andlow resistivity; and the process is simple in the operation, and is compatible with the modern semiconductor processing technology, such that the performance of the device based on the graphene stripcan be expected to be improved, and the application prospects are broad.

Description

technical field [0001] The invention relates to a method for preparing graphene strips, in particular to a method and application for preparing graphene strips with zigzag-shaped neat edges by hydrogen plasma etching combined with coating technology, and belongs to the technical field of nanomaterials. Background technique [0002] Graphene is composed of carbon atoms with SP 2 The honeycomb monoatomic layer two-dimensional crystal formed by hybridization is expected to have a good application prospect in transparent electrodes, high-performance detectors, optoelectronic devices and wearable devices due to its unique energy band structure and excellent physical properties. However, due to the zero energy gap of graphene, there is no "off" state, which limits its application in the field of semiconductor devices. Graphene ribbons, especially graphene nanoribbons, as a way to open the energy gap and also the only way to miniaturize and highly integrate devices, have received ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/194B82Y30/00B82Y40/00
Inventor 刘立伟刘丰奎李奇王汝冰郭玉芬李伟伟
Owner SUZHOU INST OF NANO TECH & NANO BIONICS CHINESE ACEDEMY OF SCI
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