Annealing method for semiconductor laser epitaxial wafer based on carbon protection film

Abstract

Disclosed is an annealing method for a semiconductor laser epitaxial wafer based on a carbon protection film. The annealing method comprises the following steps that 1) a buffer layer is grown on a substrate at 650-720 DEG C firstly, and then other thin film layers in the material structure of the semiconductor laser are grown in sequence to obtain the semiconductor laser epitaxial wafer; 2) the semiconductor laser epitaxial wafer is subjected to surface treatment, wherein the outer surface of the semiconductor laser is coated with photoresist, and next, the photoresist is subjected to curingand carbonizing at a high temperature to form a dense carbon protection film on the surface; 3) annealing treatment is carried out, wherein the semiconductor laser epitaxial wafer with the carbon protection film on the surface is subjected to high-temperature annealing treatment in a high-temperature annealing furnace; and 4) the carbon protection film on the surface of the semiconductor laser epitaxial wafer is removed, wherein the carbon protection film on the surface of the semiconductor laser epitaxial wafer after annealing is removed through soaking of a de-carbonizing protection film solution and ultrasonic cleaning. The defect density of the epitaxial wafer can be effectively reduced, the quality of the epitaxial wafer of the laser can be improved, and the superior performance of the laser can be ensured.

Description

technical field [0001] The invention belongs to the technical field of semiconductor laser preparation technology, and in particular relates to an annealing method of a semiconductor laser epitaxial wafer based on a carbon protective film. Background technique [0002] Semiconductor optoelectronic devices are an important part of today's high-tech fields and play a pivotal role in modern society. Semiconductor lasers have become one of the most important semiconductor optoelectronic devices due to their wide range of wavelength selection, small size, low power consumption, high efficiency, low cost, and direct modulation. After half a century of development, new devices and new processes have emerged around the goal of improving device characteristics. Practical devices have been widely used in laser communication, medical beauty, information processing, mechanical material processing, national defense and military industries. [0003] In the epitaxial wafer growth of semic...

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Problems solved by technology

Although these three annealing methods can generally meet the requirements of the material, there are also some defects. The first annealing method can only be carried out at a lower temperature, and only prevents the oxidation problem; in the second annealing method, AsH 3 、PH 3 Both are toxic gases, which are extremely harmful to the human body and have poor safety performance; although the annealing method of the sandwich structure can effectively prevent the volatilization of As and P on the surface material of the semiconductor laser epitaxial wafer to a certain extent, the upper and lower protective sheets will Causes changes in the temperature field distribution of the annealing furnace, and impurity elements in the substrate will pollute the epitaxial wafer during annealing

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