Threshold switch device based on organic and inorganic hybrid perovskite and preparation method of threshold switch device

A threshold switch and perovskite technology, which is applied in the field of organic-inorganic hybrid perovskite-based threshold switch devices and its preparation, can solve the problems of threshold switch devices without organic-inorganic hybrid perovskites, and achieve favorable Effects of mobile diffusion, optimized growth process, and large contact area

Active Publication Date: 2019-05-14
DALIAN UNIV OF TECH
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  • Abstract
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  • Claims
  • Application Information

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Problems solved by technology

However, there is no threshold switch device based on organic-inorganic hybrid perovskite

Method used

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  • Threshold switch device based on organic and inorganic hybrid perovskite and preparation method of threshold switch device
  • Threshold switch device based on organic and inorganic hybrid perovskite and preparation method of threshold switch device
  • Threshold switch device based on organic and inorganic hybrid perovskite and preparation method of threshold switch device

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Embodiment Construction

[0051] The invention is a threshold switching device with organic-inorganic hybrid perovskite as a dielectric layer, silver as a top electrode, and FTO conductive glass as a bottom electrode.

[0052] Figure 7 Shown is the structural diagram of device of the present invention, is respectively silver electrode layer 701, and dielectric layer 702 is organic-inorganic hybrid perovskite (CsFAMAPb(I x Br 1-x ) 3 ) layer, bottom electrode 703FTO conductive glass.

[0053] The preparation method of the example of the present invention includes the following contents.

[0054] Step 1, cleaning FTO conductive glass:

[0055] Use detergent, deionized water, absolute ethanol, acetone, and isopropanone in sequence to ultrasonically clean for 20 minutes, then dry with nitrogen, and then treat with ultraviolet and ozone for 25 minutes.

[0056] In the example of the present invention, the size of the FTO glass used is 2cm*2cm.

[0057] Step 2, prepare organic-inorganic hybrid perovsk...

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Abstract

The invention relates to a threshold switch device based on organic and inorganic hybrid perovskite and a preparation method of the threshold switch device, belongs to the field of data storage; the threshold switch device comprises a bottom electrode, a dielectric layer and a top electrode, wherein the top electrode is a silver electrode, the bottom electrode is FTO conductive glass, and the dielectric layer adopts (CsxFAyMA1-x-y)Pb(IzBr1-z)3. The threshold switch device has a high resistance state and a low resistance state. The method comprises the following steps of firstly, dropwise adding a (CsxFAyMA1-x-y)Pb(IzBr1-z)3 solution on the conductive surface of the bottom electrode, starting a glue mixing machine for spin coating, and then dropwise adding anti-solvent chlorobenzene beforethe spin coating is finished, so that the perovskite is rapidly crystallized; secondly, carrying out annealing to obtain a perovskite thin film on the conductive surface; finally, depositing the top electrode on the perovskite thin film, and applying continuous electric pulse stimulation to the silver electrode, so that silver is diffused into the perovskite layer to obtain the threshold switch device. Compared with a traditional threshold switch device, the method disclosed by the invention is carried out in dry air by adopting a low-temperature solution spin-coating process, and a high-temperature process or a high-vacuum or inert environment is not needed, so that the production cost is low, the process is simple, and the method is suitable for large-scale manufacturing.

Description

technical field [0001] The invention belongs to the field of data storage, provides non-linear current-voltage response for storage devices, and is used to suppress the sneak current problem in a crossbar structure, and provides a threshold switch device based on organic-inorganic hybrid perovskite and a preparation method thereof. Background technique [0002] Organic-inorganic hybrid perovskites generally have a cubic or octahedral structure, and its expression is ABX 3 , A represents an organic cation, generally CH3NH 3+ (MA); B represents a metal cation, usually Pb 2+ ; X represents a halogen anion, generally Cl - , Br - , I - Wait. Among them, BX 6 An octahedron is formed, the B atoms are located at the core of the octahedron, the X halogen atoms occupy the corners of the octahedron, and the A atoms are located at the vertices of the face-centered cubic lattice, and the halogen octahedrons share vertices to form a three-dimensional framework structure. The connec...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/30H01L51/05H01L51/40
Inventor 王晨樊宏波黄阳郝亮边继明杨一鸣
Owner DALIAN UNIV OF TECH
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