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A kind of la, zn co-doped bismuth ferrite thin film and its preparation method and application

A bismuth ferrite and co-doping technology, which is applied in semiconductor/solid-state device manufacturing, circuits, electrical components, etc., can solve the problems of unsuitability for industrial production, large operating errors of spin coating technology, and high equipment requirements

Inactive Publication Date: 2021-09-14
CENT SOUTH UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0008] At present, spin-coating and magnetron sputtering are used to prepare bismuth ferrite thin films; magnetron sputtering requires high equipment and high cost, and is not suitable for industrial production.
However, the current spin coating method also has problems such as large operating errors of the spin coating technology and insufficient uniformity of the samples.

Method used

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  • A kind of la, zn co-doped bismuth ferrite thin film and its preparation method and application
  • A kind of la, zn co-doped bismuth ferrite thin film and its preparation method and application
  • A kind of la, zn co-doped bismuth ferrite thin film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0050] La, Zn doped BiFeO 3 (BLFZO) film preparation:

[0051] The specific method is as follows: First, 0.92g Bi(NO 3 ) 3 ·5H 2 O and 0.77g Fe(NO 3 ) 3 9H 2 O, 0.02 (0.029g) Zn (NO 3 ) 3 ·6H 2 O and 0.043g La(NO 3 ) 3 ·6H 2 O was dispersed in 5ml of ethylene glycol to form a mixed metal salt solution, sonicated for 5 minutes until the metal salt was completely dissolved, then transferred to a magnetic stirrer, and continued to stir for 5 hours. After the stirring is completed, start spin-coating; drop the mixed metal salt solution on the cleaned silicon substrate, spin-coat at low speed (500r / min) for 6s; spin-coat at high speed (4000r / min) for 20s, then move to the muffle furnace , baked at 350°C for 5min; after repeating spin coating and firing 40 times, annealed at 500°C for one hour to obtain BiFeO on the silicon substrate 3 film material.

[0052] figure 2 Is La, Zn doped BiFeO 3 X-ray diffraction (XRD) of (BLFZO) films. The obtained results were compar...

Embodiment 2

[0054] La, Zn doped BiFeO 3 (BLFZO) film preparation:

[0055] The specific method is as follows: First, 0.92g Bi(NO 3 ) 3 ·5H 2 O and 0.77g Fe(NO 3 ) 3 9H 2 O, 0.02g Zn(NO 3 ) 3 ·6H 2 O and 0.043g La(NO 3 ) 3 ·6H 2 O was dispersed in 4ml of ethylene glycol to form a mixed metal salt solution, sonicated for 5 minutes until the metal salt was completely dissolved, transferred to a magnetic stirrer, and continued to stir for 5 hours. After the stirring is completed, start spin-coating; drop the mixed metal salt solution on the cleaned silicon substrate, spin-coat at low speed (400r / min) for 10s; spin-coat at high speed (3000r / min) for 30s, then move to the muffle furnace , baked at 450°C for 3min; repeated spin coating and firing 30 times, annealed at 600°C for 0.5 hour, and obtained La, Zn co-doped BiFeO on the silicon substrate 3 (BLFZO) film. After testing, the saturation magnetic induction (Ms) of the film obtained in this embodiment is 0.065emu / g, and the coer...

Embodiment 3

[0057] La, Zn doped BiFeO 3 (BLFZO) film preparation:

[0058] The specific method is as follows: First, 0.92g Bi(NO 3 ) 3 ·5H 2 O and 0.77g Fe(NO 3 ) 3 9H 2 O, 0.029gZn(NO 3 ) 3 ·6H 2 O and 0.043g La(NO 3 ) 3 ·6H 2 O was dispersed in 5ml of ethylene glycol to form a mixed metal salt solution, sonicated for 5 minutes until the metal salt was completely dissolved, then transferred to a magnetic stirrer, and continued to stir for 5 hours. After the stirring is completed, start spin-coating; drop the mixed metal salt solution on the cleaned silicon substrate, spin-coat at low speed (600r / min) for 50s; spin-coat at high speed (5000r / min) for 10s, then move to the muffle furnace , baked at 300°C for 6min; after repeated spin coating and firing 50 times, annealed at 500°C for 2 hours to obtain La, Zn co-doped BiFeO on the silicon substrate 3 (BLFZO) film. After testing, the saturation magnetic induction (Ms) of the film obtained in this embodiment is 0.061 emu / g, and t...

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Abstract

The invention discloses a La, Zn co-doped bismuth ferrite thin film, a preparation method and application thereof. Its chemical formula is: Bi 1‑ x La x Fe 1‑y Zn y o 3 , (x=0.03~0.08y=0.03~0.08), the thickness of the film is 0.6~2 μm. The method for the La and Zn co-doped bismuth ferrite film comprises the following steps: adding bismuth source, iron source, lanthanum source, and zinc source to ethylene glycol, mixing to obtain a mixed solution, and spin-coating the mixed solution on Silicon substrate, then roasted to obtain the precursor, repeated spin coating and roasting ≥ 20 times, and then annealed to obtain La, Zn co-doped bismuth ferrite thin film; the preparation method of the present invention is simple and controllable, and the obtained La, Zn co-doped bismuth ferrite film The doped bismuth ferrite thin film has good stability, good uniformity, strong magnetism and small electric leakage. The obtained La, Zn co-doped bismuth ferrite film has great application potential in the fields of ferroelectricity and piezoelectricity, spintronics, and terahertz devices.

Description

technical field [0001] The invention belongs to the field of multiferroic material preparation, and in particular relates to a La and Zn co-doped bismuth ferrite thin film, a preparation method and application thereof. Background technique [0002] Multiferroic material is an environmentally friendly material, which refers to a class of substances that have both ferroelectricity and ferromagnetism. It can produce synergistic effects through electromagnetic coupling, endow ferroic materials with new properties, and greatly broaden the scope of application. [0003] In the past few decades, due to limited conditions, the research on multiferroic materials is relatively scarce. In recent years, with the birth and development of integrated ferroelectrics, the research of ferroelectric thin films has become a hot spot. Especially in the ever-changing contemporary society, it has already occupied a major position in cutting-edge technology fields such as sensing, storage, integra...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C04B35/40C04B35/622C04B35/624H01L21/02
Inventor 古映莹姜致言
Owner CENT SOUTH UNIV