Method for preparing perovskite solar cell with dual-electron transfer layer

A dual-electron transmission and solar cell technology, applied in circuits, electrical components, photovoltaic power generation, etc., can solve problems such as period damage and solar cell efficiency decline, and achieve low positive and negative voltage scanning direction hysteresis and high energy conversion efficiency. Effect

Active Publication Date: 2019-05-17
深圳市先进清洁电力技术研究有限公司
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Problems solved by technology

[0006]When IGZO is in direct contact with perovskite materials, it may cause the decomposition of perovskite materials, and the defect state on the surface of IGZO may become the carrier recombination center inside the solar cell , resulting in a decrease in the efficiency of the solar cell or even damage during the

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  • Method for preparing perovskite solar cell with dual-electron transfer layer
  • Method for preparing perovskite solar cell with dual-electron transfer layer
  • Method for preparing perovskite solar cell with dual-electron transfer layer

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preparation example Construction

[0042] like figure 1Shown, a kind of preparation method of the solar cell with double electron transport layer structure, described method comprises:

[0043] Step 1. Prepare a double electron transport layer on the FTO (tin dioxide conductive glass) conductive glass doped with fluorine; the double electron transport layer is an IGZO (indium gallium zinc oxide) film and SnO 2 (tin dioxide) thin film, the preparation method of described IGZO thin film can select magnetron sputtering or solution spin coating, layer thickness 10-45nm; Described SnO 2 The thin film is prepared by solution spin coating; Step 2. Prepare a layer of FA with an organic-inorganic hybrid perovskite structure by solution spin coating on the double electron transport layer 0.7 MA 0.2 Cs 0.1 Pb(Br 0.05 I 0.95 ) 3 as a light absorbing layer;

[0044] Step 3. adopt solution spin-coating method to prepare one deck Spiro-OMeTAD on described light-absorbing layer as hole-transporting layer;

[0045] Step...

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Abstract

The embodiment of the invention provides a method for preparing a high-performance perovskite solar cell by employing a dual-electron transfer layer structure. The method comprises the steps of: preparing a dual-electron transfer layer on fluorine-doped tin oxide transparent conductive glass, wherein the dual-electron transfer layer is an IGZO film and a tin oxide film, the preparation method of the IGZO film can select magnetron sputtering or solution spin-coating, and the layer thickness is 10-45nm; employing the solution spin-coating method to prepare a layer of FA0.7MA0.2Cs0.1Pb(Br0.05I0.95)3 of an organic-inorganic hybrid perovskite structure as a light blocking layer; employing the solution spin-coating method to prepare a layer Spiro-OMeTAD as a hole transport layer; and performingvacuum evaporation of a metal electrode. The method for preparing the high-performance perovskite solar cell reduces the carrier recombination in the solar cell to promote effective energy output andimproves the fill factor (FF) of the solar cell so as to prepare the solar cell with high energy conversion efficiency.

Description

technical field [0001] The invention relates to the field of perovskite solar cells, in particular to a method for preparing a perovskite solar cell based on indium gallium zinc oxide and tin dioxide double electron transport layer. Background technique [0002] Perovskite solar cells have developed rapidly in recent years, and their highest energy conversion efficiency has reached 22.1%. In order to achieve efficient energy output, perovskite solar cells usually include multi-layer thin films such as light absorbing layer, carrier transport / blocking layer and electrodes. The carrier transport layer includes an electron transport layer and a hole transport layer, which play the role of conducting electrons, blocking holes, conducting holes, and blocking electrons, respectively, so as to promote the separation of photogenerated carriers generated by the light-absorbing layer to both sides, Form effective energy output, reduce carrier recombination inside the solar cell, and ...

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549
Inventor 王堉陈乐伍赖其聪周航
Owner 深圳市先进清洁电力技术研究有限公司
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