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A highly stable all-inorganic perovskite quantum dot film and its preparation method

A quantum dot film, high stability technology, applied in the field of high stability all-inorganic perovskite quantum dot film and its preparation, can solve the problems of structural decomposition and destruction, shortened luminous life, decreased luminous efficiency, etc., to achieve hydrophobicity Improvement, surface uniformity, and long service life

Active Publication Date: 2021-08-06
HEFEI LUCKY SCI & TECH IND
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] However, the perovskite quantum dot itself is easily affected by water and oxygen molecules in the air, causing its structure to decompose and destroy, resulting in a decrease in luminous efficiency and a shortened luminous lifetime.

Method used

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  • A highly stable all-inorganic perovskite quantum dot film and its preparation method
  • A highly stable all-inorganic perovskite quantum dot film and its preparation method

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preparation example Construction

[0036] The preparation method of the present invention comprises the following steps:

[0037] (1), the inorganic halide PbX 2 Mix with CsX at a molar ratio of 0.1:1 to 1.1:1 and completely dissolve in N,N-dimethylformamide, where X is Cl, Br or I, and oleic acid and oleylamine at a volume ratio of 1:1 to Add in 1:6 and stir evenly to obtain all-inorganic perovskite quantum dots (CsPbX 3 ) precursor solution.

[0038] (2) Mix the fluororesin and N,N-dimethylamide evenly at a mass ratio of 1:10 to 1:20, and add a coupling agent. The mass ratio of the coupling agent to the fluororesin is 0.01 :1~0.06:1, stir evenly to obtain fluororesin solution.

[0039](3), the all-inorganic perovskite quantum dot (CsPbX) of step (1) 3 ) precursor solution and the fluororesin solution in step (2) are mixed in a mass ratio of 0.1:100 to 1.1:100, and stirred evenly to obtain all-inorganic perovskite quantum dots (CsPbX 3 ) Coating solution.

[0040] (4), the all-inorganic perovskite quantu...

Embodiment 1

[0045] (1), the inorganic halide PbCl 2 Mix with CsCl at a molar ratio of 0.1:1 and completely dissolve in N,N-dimethylformamide, add oleic acid and oleylamine at a volume ratio of 1:1, and stir evenly to obtain all-inorganic CsPbCl 3 Perovskite quantum dot precursor solution.

[0046] (2) Mix polytetrafluoroethylene (PTFE) and N,N-dimethylformamide at a mass ratio of 1:10, and add vinyltriethoxysilane (KH151), the amount of which is the same as polytetrafluoroethylene The mass ratio of vinyl fluoride (PTFE) is 0.01:1, and the polytetrafluoroethylene (PTFE) solution is obtained by stirring evenly.

[0047] (3), the all-inorganic CsPbCl of step (1) 3 The perovskite quantum dot precursor solution is mixed with the polytetrafluoroethylene (PTFE) solution of step (2) in a mass ratio of 0.1:100, and stirred evenly to obtain all-inorganic CsPbCl 3 Perovskite quantum dot coating solution.

[0048] (4), the all-inorganic CsPbCl of step (3) 3 The perovskite quantum dot coating sol...

Embodiment 2

[0052] (1), the inorganic halide PbBr 2 Mix with CsBr at a molar ratio of 0.3:1 and completely dissolve in N,N-dimethylformamide, add oleic acid and oleylamine at a volume ratio of 1:2, and stir evenly to obtain all-inorganic CsPbBr 3 Perovskite quantum dot precursor solution.

[0053] (2), polychlorotrifluoroethylene (PCTFE) and N,N-dimethylformamide are mixed evenly in a mass ratio of 1:12, and vinyl tris (β-methoxyethoxy) silane ( A172), the mass ratio of addition amount and polychlorotrifluoroethylene (PCTFE) is 0.02:1, stirs to obtain polychlorotrifluoroethylene (PCTFE) solution.

[0054] (3), the all-inorganic CsPbBr of step (1) 3 The perovskite quantum dot precursor solution and the polychlorotrifluoroethylene (PCTFE) solution in step (2) are mixed in a mass ratio of 0.3:100, and stirred evenly to obtain all-inorganic CsPbBr 3 Perovskite quantum dot coating solution.

[0055] (4), the all-inorganic CsPbBr of step (3) 3 The perovskite quantum dot coating solution is...

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Abstract

The invention discloses a high-stability all-inorganic perovskite quantum dot film, which comprises an all-inorganic perovskite quantum dot layer (1), a barrier layer for water and oxygen (2), and a pressure-sensitive adhesive layer (3) , the water oxygen barrier layer (4), the pressure-sensitive adhesive layer (3) is used to bond the all-inorganic perovskite quantum dot layer (1) and the water oxygen barrier layer (4), and the all-inorganic perovskite quantum dot layer (4) The composition and addition amount of the dot layer (1) are: all-inorganic perovskite quantum dots: 0.1-1.1 parts; fluororesin: 5-20 parts; coupling agent: 0.05-1.2 parts. The invention utilizes the tight chemical bonds of the fluororesin to wrap the all-inorganic perovskite quantum dots, avoiding the damage of water and oxygen molecules to the molecular structure of the all-inorganic perovskite; adding a coupling agent to the fluororesin, thereby preventing water and oxygen molecules from entering the all-inorganic perovskite Perovskite quantum dot layer; at the same time, the barrier film is used to encapsulate the all-inorganic perovskite quantum dot layer, which further ensures the stability of the all-inorganic perovskite quantum dot and makes it have a longer service life.

Description

technical field [0001] The invention relates to the technical field of quantum dot films, in particular to a highly stable all-inorganic perovskite quantum dot film and a preparation method thereof. Background technique [0002] As a new type of liquid crystal display, quantum dot TV is gradually becoming commercialized. At present, quantum dot TV technology mainly uses quantum dots to make quantum dot film, which is used to replace the lower diffusion film in the backlight module of liquid crystal display. Using blue LEDs with quantum dot film in the backlight module can significantly improve the color saturation of the liquid crystal display, and can increase the NTSC color gamut of the liquid crystal display to 110-120%. At present, classical cadmium selenide quantum dots are mainly used in quantum dot films. Such quantum dot materials generally adopt a thick core-shell structure, and the preparation process is complicated. Due to the sensitivity of quantum dots to water ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B32B7/12B32B33/00C08K3/16C08L27/18C08L27/12C08L27/16C08L23/08C08L27/14
Inventor 黄永华张运波王增敏李彩翠郑宇翔许丽丽
Owner HEFEI LUCKY SCI & TECH IND