Silicon carbide push plate

A silicon carbide and silicon carbide micropowder technology, applied in the field of silicon carbide push plates, can solve the problems of insufficient corrosion resistance of silicon carbide push plates, poor versatility of silicon carbide push plates, and can only be used in high temperature furnaces, etc. High temperature, long service life, enhanced strength effect

Inactive Publication Date: 2019-05-28
平顶山市腾博耐火材料有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] However, the silicon carbide push plate currently produced has poor versatility. High-temperature products can only be used in high-temperature kilns, medium-temperature products can only be used in medium-temperature kilns, and low-temperature products can only be used in low-temperature kilns, which cannot be used universally. It is a waste of raw materials and labor. At the same time, the silicon carbide push plate has insufficient corrosion resistance and high thermal conductivity, which is not conducive to energy saving and environmental protection.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] The silicon carbide push plate of this embodiment is represented by weight percentage. The silicon carbide push plate raw material contains 20% of silicon carbide micropowder, 15% of simple carbon powder, 20% of silicon carbide nanopowder, α-activated alumina micropowder 18%, graphite nano powder 12%, ceramic microbead fine powder 3%, carbon fiber 3%, coal tar pitch 4%, organic binder 5%.

[0033] Wherein, the particle size of the silicon carbide micropowder is 10-15 μm; the particle size of the silicon carbide nanopowder is 60-100 nm.

[0034] Wherein, the C content of the simple carbon powder is ≥99wt%, and the particle size of the simple carbon powder is ≤20 μm.

[0035] Wherein, the particle size of the α-activated alumina micropowder is 4-8 μm; the particle size of the graphite nano powder is 200-300 nm; the particle size of the ceramic microbead fine powder is 7-14 μm.

[0036] Wherein, the carbon fiber is a high-strength vapor-phase grown carbon fiber with a car...

Embodiment 2

[0045] The silicon carbide push plate of this embodiment is represented by weight percentage. The silicon carbide push plate raw material contains 30% of silicon carbide micropowder, 20% of simple carbon powder, 15% of silicon carbide nanopowder, α-activated alumina micropowder 15%, graphite nano powder 10%, ceramic microbead fine powder 2%, carbon fiber 2%, coal tar pitch 3%, organic binder 3%.

[0046] Wherein, the particle size of the silicon carbide micropowder is 10-15 μm; the particle size of the silicon carbide nanopowder is 60-100 nm.

[0047] Wherein, the C content of the simple carbon powder is ≥99wt%, and the particle size of the simple carbon powder is ≤20 μm.

[0048] Wherein, the particle size of the α-activated alumina micropowder is 4-8 μm; the particle size of the graphite nano powder is 200-300 nm; the particle size of the ceramic microbead fine powder is 7-14 μm.

[0049] Wherein, the carbon fiber is a high-strength vapor-phase grown carbon fiber with a carbo...

Embodiment 3

[0058] The silicon carbide push plate of this embodiment is represented by weight percentage. The silicon carbide push plate raw material contains 15% of silicon carbide micropowder, 20% of simple carbon powder, 30% of silicon carbide nanopowder, α-activated alumina micropowder 10%, graphite nano powder 11%, ceramic microbead fine powder 3%, carbon fiber 3%, coal tar pitch 4%, organic binder 4%.

[0059] Wherein, the particle size of the silicon carbide micropowder is 10-15 μm; the particle size of the silicon carbide nanopowder is 60-100 nm.

[0060] Wherein, the C content of the simple carbon powder is ≥99wt%, and the particle size of the simple carbon powder is ≤20 μm.

[0061] Wherein, the particle size of the α-activated alumina micropowder is 4-8 μm; the particle size of the graphite nano powder is 200-300 nm; the particle size of the ceramic microbead fine powder is 7-14 μm.

[0062] Wherein, the carbon fiber is a high-strength vapor-phase grown carbon fiber with a car...

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PUM

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Abstract

The invention relates to the technical field of silicon carbide products and in particular relates to a silicon carbide push plate. The silicon carbide push plate is prepared from the following raw materials: 15 to 30 percent of silicon carbide micro-powder, 5 to 20 percent of elemental carbon powder, 10 to 30 percent of silicon carbide nano-powder, 5 to 18 percent of alpha-active aluminum oxide micro-powder, 5 to 12 percent of graphite nano-powder, 1 to 3 percent of ceramic micro-bead fine powder, 1 to 3 percent of carbon fiber, 1 to 4 percent of coal asphalt and 2 to 5 percent of an organicbinding agent. The silicon carbide push plate provided by the invention has strong commonality and can be used for high-temperature, medium-temperature and low-temperature kiln furnaces at the same time; the silicon carbide push plate has the advantages of strong corrosion resistance, low coefficient of thermal conductivity and the like and has a wide application prospect.

Description

technical field [0001] The invention relates to the technical field of silicon carbide products, in particular to a silicon carbide push plate. Background technique [0002] Silicon carbide products are high-grade refractory materials, which have excellent thermal conductivity, high thermal shock stability, high load softening point and good wear resistance, and are widely used in various industries with special requirements. The silicon carbide push plate involved in this application is mainly used in the production of daily-use ceramics, high-grade ceramics, glazed tiles, blue tiles, and slate tiles in push plate kilns or push plate furnaces. The silicon carbide push plate is not only high temperature resistant and wear-resistant , It is used in high, medium and low temperature, and has a long service life, low price, simple production process, and does not pollute the environment. [0003] However, the silicon carbide push plate currently produced has poor versatility. H...

Claims

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Application Information

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IPC IPC(8): C04B35/565C04B35/634C04B35/66C04B35/80
Inventor 郑瑞瑞李中杰张西岐郑建国张宇航郑春红张自立
Owner 平顶山市腾博耐火材料有限公司
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