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Pretreatment method and device for hard alloy cutter before diamond coating deposition

A technology of diamond coating and cemented carbide, which is applied in the direction of metal material coating process, coating, solid-state diffusion coating, etc., can solve the problem that it cannot be applied to large-scale industrial production, the preparation method of composite transition layer is complex, and the hindering effect is not obvious and other problems to achieve the effect of eliminating cleaning treatment, speeding up boronizing speed and improving gas activity

Active Publication Date: 2019-05-28
HU-NAN NEW FRONTIER SCI & TECH LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0015] 2. Compared with the transition layer method, the transition layer method is not suitable for large-scale industrial production because the barrier effect of a single transition layer is not obvious, and the preparation method of the composite transition layer is complicated, so the cost is high

Method used

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  • Pretreatment method and device for hard alloy cutter before diamond coating deposition

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Effect test

Embodiment 1

[0044] Participate in figure 1 , a cemented carbide tool pretreatment device before depositing a diamond coating, comprising a furnace body 1, a furnace chamber 2, an electric heating body 3, a plasma generating power supply 4, and a sample stage 5, and the furnace body 1 is provided with a furnace chamber 6, and the The furnace 2 is a tubular cavity, which is arranged coaxially with the furnace chamber 6 and installed in the furnace body 1. An electric heating body is arranged in the furnace chamber 6 and is located around the outer wall of the furnace chamber 2; One end of the furnace 2 is provided with an air inlet 7, the other end is provided with an air outlet 8, and the middle part of the furnace 2 is provided with a sample stage 5; the sample stage 5 is provided with a bias electrode 9, and the bias electrode 9 It is electrically connected to the bias power supply 11; on both sides of the sample table 5, there is a block 10 in the furnace; on the outer wall of the furna...

Embodiment 2

[0046] (1) First chemical microetching: Put the cemented carbide milling cutter into 50% concentration of sodium hydroxide solution and ultrasonically clean it for 10 minutes with an ultrasonic power of 50W, and then put it into 20% concentration of acid oxygen water for ultrasonic cleaning 20s, after etching, wash and set aside.

[0047] (2) Plasma activation treatment: Put the cemented carbide cutter into the attached equipment, vacuumize, heat up to 600°C after vacuuming, then feed in hydrogen gas with a flow rate of 50 sccm, and turn on the power supply of the radio frequency plasma device and For the power supply of the RF bias device, adjust the plasma power to 300W, the bias voltage to 20V, and process for 90 minutes.

[0048] (3) Plasma-enhanced gaseous boride treatment: close the bias device; the temperature of the furnace is raised to 800° C., and the flow rate is 20 sccm of diborane. At this time, the furnace is a mixed gas composed of diborane and hydrogen, and the...

Embodiment 3

[0056] (1) First chemical microetching: Put the cemented carbide plane substrate into 50% concentrated sodium hydroxide solution and ultrasonically clean it for 15 minutes with an ultrasonic power of 50W, and then put it into 20% concentration of acid oxygen water for ultrasonic cleaning 30s, after etching, wash and set aside.

[0057] (2) Plasma activation treatment: put the cemented carbide cutter into the attached equipment, vacuumize, heat up to 700°C after vacuuming, then feed in hydrogen gas with a flow rate of 50 sccm, and turn on the power supply of the radio frequency plasma device and For the power supply of the RF bias device, adjust the plasma power to 200W, the bias voltage to 30V, and process for 90 minutes.

[0058] (3) Plasma-enhanced gaseous boride treatment: close the bias device, raise the furnace temperature to 900°C, and feed diborane with a flow rate of 30 sccm. At this time, the furnace is a mixed gas composed of diborane and hydrogen, and at the same ti...

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Abstract

The invention relates to a pretreatment method and a device for a hard alloy cutter before diamond coating deposition. The device comprises a furnace body, a hearth, an electric heater, plasma generating power supply and a sample table. The pretreatment method comprises the steps of chemical micro-etching, plasma activation, plasma enhanced gaseous boronizing and plasma cleaning on the surface ofthe hard alloy cutter. According to the invention, plasma equipment is clamped on a constant temperature tube furnace, equipment obtained by reforming a bias device is added, and a set of appropriateprocesses are added to solve the problems in the prior art. The equipment provided by the invention has a simple structure and convenient operation, realizes plasma activation, plasma enhanced gaseousboronizing and plasma cleaning of workpieces, optimizes the existing microwave plasma gaseous boronizing process, greatly reduces the process cost, has good boronizing effect, and is suitable for large-scale industrial production.

Description

technical field [0001] The invention discloses a pretreatment method and device for a cemented carbide tool before depositing a diamond coating, and belongs to the technical field of chemical vapor deposition. Background technique [0002] The diamond-coated cemented carbide tool prepared by chemical vapor deposition method has the excellent properties of diamond, such as extremely high hardness, excellent wear resistance and superior chemical inertness. It is suitable for processing carbon fiber reinforced composite materials, high silicon aluminum alloy and Difficult-to-machine materials such as high-performance ceramics have broad application prospects. However, the film-based bonding force between the diamond coating and the cemented carbide substrate is low, which restricts the wide application of diamond-coated cemented carbide tools. [0003] The main factors affecting the bonding performance of the film substrate are: the influence of the binder phase Co, the differ...

Claims

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Application Information

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IPC IPC(8): C23C8/36C23C8/02
Inventor 魏秋平马莉周科朝余志明
Owner HU-NAN NEW FRONTIER SCI & TECH LTD
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