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A method and system for time-sharing ablation of solar cell dielectric film by multi-wavelength laser

A solar cell and dielectric film technology, which is applied in laser welding equipment, circuits, electrical components, etc., can solve the problems of large thermal influence, serious damage, and increased risk of solar cell cracks, so as to improve processing speed, good ablation ability, The effect of improving efficiency and production capacity

Active Publication Date: 2021-10-15
WUHAN DR LASER TECH CORP LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Among them, the 808-1064nm laser has a longer wavelength and better penetration, which can take into account both optical absorption and penetration depth, but the heat has a greater impact during processing, and the damage is more serious, which affects the electrical performance of the battery and increases the risk of solar cell cracks; 355nm-532nm laser The processing heat has little impact, but it is easy to be reflected by the passivation layer on the surface of the cell, resulting in energy loss, resulting in incomplete ablation, affecting the subsequent metallization process, and affecting electrical performance

Method used

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  • A method and system for time-sharing ablation of solar cell dielectric film by multi-wavelength laser
  • A method and system for time-sharing ablation of solar cell dielectric film by multi-wavelength laser
  • A method and system for time-sharing ablation of solar cell dielectric film by multi-wavelength laser

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0043] Embodiment 1 Using the method of the present invention to perform laser ablation on crystalline silicon solar cells, the material of the first layer of the crystalline silicon solar cells in this embodiment is aluminum oxide with a thickness of 10 nm, and the material of the second layer is silicon nitride with a thickness of 150 nm. The wavelength of the first-wavelength laser is 1064nm, the single-point energy is 40μJ, and the spot diameter is 24μm; the wavelength of the second-wavelength laser is 532nm, the single-point energy is 27μJ, and the spot diameter is 33μm. The processing speed is selected as 25m / s, and the time interval between the two lasers is set as 1ns. Facula ablation appearance as Figure 4 As shown, the diameter of the spot is 33 μm, and the depth is 1.51 μm; the comparison shows that the energy of the 1064nm laser is higher than the threshold of the passivation film. Under its synergistic effect, the penetration ability of the 532nm laser is improve...

Embodiment 2

[0044] Embodiment 2 Using the method of the present invention to perform laser ablation on crystalline silicon solar cells, the material of the first layer of the crystalline silicon solar cells in this embodiment is aluminum oxide with a thickness of 10 nm, and the material of the second layer is silicon nitride with a thickness of 150 nm. The wavelength of the first-wavelength laser is 1064nm, the single-point energy is 40μJ, and the spot diameter is 24μm; the wavelength of the second-wavelength laser is 355nm, the single-point energy is 12μJ, and the spot diameter is 38μm. The processing speed is selected to be 25m / s, the time interval between the two lasers is set to 1ns, the final spot diameter is 38μm, and the depth is 0.4μm; the comparison shows that the energy of the 1064nm laser is higher than the threshold of the passivation film. Under its synergy, the 355nm laser The penetration ability is improved, which increases the depth of ablation, which is conducive to improv...

Embodiment 3

[0045] Example 3 Laser ablation of crystalline silicon solar cells is carried out by using the method of the present invention. The material of the first layer of the crystalline silicon solar cells of this embodiment is aluminum oxide with a thickness of 10 nm, and the material of the second layer is silicon nitride with a thickness of 150 nm. The wavelength of the first-wavelength laser is 808nm, the single-point energy is 23μJ, and the spot diameter is 24μm; the wavelength of the second-wavelength laser is 532nm, the single-point energy is 27μJ, and the spot diameter is 33μm. The processing speed is selected as 25m / s, and the time interval between the two lasers is set as 1ns. The final spot diameter is 33 μm, and the depth is 1.45 μm. The comparison shows that the energy of the 808nm laser is higher than the threshold of the passivation film. Under its synergistic effect, the penetration ability of the 532nm laser is improved, which improves the ablation depth, which is con...

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Abstract

The invention provides a method and system for time-sharing ablation of solar cell dielectric films by multi-wavelength lasers. At least two coaxial lasers of different wavelengths are used to sequentially ablate solar cell dielectric films in time-sharing. In one cycle, each laser The light is emitted once in turn according to a certain light emission time interval, so that the spots formed by all lasers in this period overlap; the energy density of each laser is higher than the damage threshold of the corresponding ablation material, and the wavelength of each laser is smaller than the cut-off of the corresponding ablation material Absorb wavelength. The present invention adopts a multi-wavelength method, first using a wavelength of laser to destroy the passivation layer on the surface of the cell, reducing its reflection on the next wavelength of laser, which can better exert the ablation ability of the next wavelength of laser, thereby increasing the processing speed. Therefore, the efficiency and production capacity are improved under the synergistic effect of the two wavelength lasers.

Description

technical field [0001] The invention belongs to the technical field of photovoltaics, and in particular relates to a method and a system for time-sharing ablation of a solar cell dielectric film by a multi-wavelength laser. Background technique [0002] In the process of high-efficiency crystalline silicon cells, different dielectric layers are often used as passivation films or anti-reflection films to passivate the surface interface states of silicon wafers, reduce surface recombination, and improve cell conversion efficiency. At the same time, the passivation film is often used as a masking layer to block diffusion and form different diffusion regions or metal contact regions. Laser ablation technology is widely used due to its advantages of simplified process, low cost of use, flexible operation, safety and stability. However, for a specific dielectric layer, the ablation effect of a single-wavelength laser is limited. [0003] For example, the back passivation film la...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18B23K26/36B23K26/362B23K26/073
CPCY02P70/50
Inventor 李志刚马蓉朱凡
Owner WUHAN DR LASER TECH CORP LTD
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