Graphene transparent electrode and work function regulation and control method thereof

A transparent electrode and graphene technology, applied in the field of materials, can solve problems such as the inability to meet the requirements of the work function of OLED device electrodes, and achieve good stability

Inactive Publication Date: 2019-05-28
重庆石墨烯研究院有限公司 +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the work function of pure graphene is 4.3-4.6eV, which is close to the ionization potential of the organic layer, far lower than the HOMO (highest occupied molecular orbital) of the organic material in contact with the anode or higher than the LUMO of the organic material in contact with the cathode. (the lowest unoccupied molecular orbital), unable to meet the requirements of the OLED device for the electrode work function

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  • Graphene transparent electrode and work function regulation and control method thereof

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Embodiment 1

[0028] Such as figure 1 Shown, is the structural representation of graphene transparent electrode among the present invention, a kind of graphene transparent electrode, comprises the transparent base material 1, ultra-thin copper layer 2, graphene layer 3, metal thin film layer 4 that are connected successively; The transparent An ultra-thin copper layer 2 is plated on the base material 1; a graphene layer 3 is formed on the surface of the ultra-thin copper layer 2; a metal film layer 4 is deposited on the surface of the graphene layer 3. An anti-reflection and anti-reflection layer 5 is deposited on the surface of the metal thin film layer 4 .

[0029] The transparent substrate 1 is any one of glass, quartz, sapphire, polyethylene terephthalate PET, polyimide PI, and polyethylene naphthalate PEN.

[0030] The thickness of the ultra-thin copper layer 2 is 1-20 nm, and the thickness of the ultra-thin copper layer is higher than the surface roughness of the transparent substrat...

Embodiment 2

[0033] A method for regulating the work function of a graphene transparent electrode, comprising the steps of:

[0034] Step 1, pretreating the transparent substrate 1 .

[0035] In step 2, an ultra-thin copper layer 2 with a thickness of 10 nm is plated on the transparent substrate 1, which is beneficial for the subsequent generation of the graphene layer 3 without transfer.

[0036] Step 3, put the transparent substrate 1 coated with the ultra-thin copper layer 2 into the chamber of the CVD furnace; feed the carrier gas H2, heat up to the graphene growth temperature of 980°C, and feed the carbon source gas CH4 into the CVD chamber , CH4 gas nucleates on the copper surface to form a graphene layer 3; after the growth is completed, stop feeding CH4 gas and continue feeding carrier gas H2. Layer 2, sample of transparent substrate 1.

[0037] Step 4, depositing a metal thin film layer 4 on the graphene layer 3, and the following conditions are met: a negative potential is appl...

Embodiment 3

[0041] A method for regulating the work function of a graphene transparent electrode, comprising the steps of:

[0042] Step 1, pretreating the transparent substrate 1 .

[0043] In step 2, an ultra-thin copper layer 2 with a thickness of 10 nm is plated on the transparent substrate 1, which is beneficial for the subsequent generation of the graphene layer 3 without transfer.

[0044] Step 3, put the transparent substrate 1 coated with the ultra-thin copper layer 2 into the chamber of the CVD furnace; feed the carrier gas H2, heat up to the graphene growth temperature of 980°C, and feed the carbon source gas CH4 into the CVD chamber , CH4 gas nucleates on the surface of the ultra-thin copper layer 2 to form a graphene layer 3; after the growth of the graphene layer 3 is completed, stop feeding CH4 gas and continue feeding carrier gas H2 until the chamber drops to room temperature, Take out a sample composed of graphene layer 3, ultra-thin copper layer 2, and transparent subst...

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Abstract

The invention relates to a graphene transparent electrode and a work function regulation and control method thereof, and belongs to the technical field of materials. The method comprises the followingsteps: pre-treating a transparent substrate; plating an ultrathin copper layer on the transparent substrate; growing a graphene layer on the surface of the ultrathin copper layer through a CVD method; forming a metal film layer on the graphene layer by using an ion sputtering method; and finally depositing an anti-reflection layer. According to the invention, the graphene is directly grown by using the ultrathin copper foil, so that the transfer step of the graphene is omitted; on the basis, the work function of the metal thin film layer is selectively regulated and controlled to be smaller than or larger than that of the graphene, and the anti-reflection layer is matched, so that the two key problems of the work function and the surface resistance of the graphene transparent electrode are solved on the premise that the transmittance is ensured. The graphene transparent electrode is good in stability and can be widely applied to the field of electronic information such as electroluminescent devices, solar cells and photoelectric detectors.

Description

technical field [0001] The invention belongs to the field of materials, and relates to a graphene transparent electrode and a work function regulating method thereof. Background technique [0002] Graphene is a new material with a single-layer sheet structure composed of carbon atoms. It is a planar film composed of carbon atoms with sp2 hybrid orbitals forming a hexagonal honeycomb lattice, and a two-dimensional material with a thickness of only one carbon atom. Graphene combines excellent optical, electrical, mechanical, and chemical properties, and has the advantages of good flexibility, high carrier mobility, non-toxicity, and abundant resource reserves. Substituting graphene for ITO materials to make flexible transparent electrodes for organic semiconductor light-emitting devices (OLEDs) can solve the problems of inflexibility, high cost, poor transparency, difficulty in large-scale production, and non-environmental protection that exist in current OLED electrode mater...

Claims

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Application Information

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IPC IPC(8): H01L51/52
Inventor 邵丽王仲勋史浩飞李华峰
Owner 重庆石墨烯研究院有限公司
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