Superhard semiconductor amorphous carbon block material and preparation method thereof

A technology of bulk materials and semiconductors, applied in the application of ultra-high pressure process, etc., can solve the problems that have not been determined, the formation of amorphous carbon, phase transition and performance research are not yet fully clear, and achieve the effect of broad application prospects

Active Publication Date: 2019-05-31
YANSHAN UNIV
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  • Claims
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Problems solved by technology

Although in the past to C 60 The phase transition of fullerenes under high pressure has been extensively studied, but about sp 2 -sp 3 The formation, phase transition and properties of amorphous carbon are not yet fully understood, especially the high temperature and high pressure phase transition diagram above 20GPa has not yet been determined

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  • Superhard semiconductor amorphous carbon block material and preparation method thereof
  • Superhard semiconductor amorphous carbon block material and preparation method thereof
  • Superhard semiconductor amorphous carbon block material and preparation method thereof

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preparation example Construction

[0030] The preparation method of the present invention is as follows:

[0031] (1) High-purity C 60 The fullerene powder is prefabricated into a cylindrical green body with a diameter of 1.2 or 2mm and a height of 2.3mm;

[0032] (2) Pack the cylindrical green body obtained in the hexagonal boron nitride crucible, and then pack in the high temperature and high pressure assembly block of standard 8 / 3 or the high temperature and high pressure assembly block of standard 10 / 5;

[0033] (3) Place the assembly block in a T25 ultra-high pressure temperature synthesis device for high temperature and high pressure treatment. The temperature of the high temperature and high pressure treatment is 500-2000 ° C, the pressure is 8-25GPa, and the holding time is 10-120 minutes;

[0034] (4) Obtain a superhard semiconductor amorphous carbon bulk material with a diameter of 1-1.9mm and a height of 1.2-1.7mm after the treatment is completed.

[0035] Compared with the prior art, the present i...

Embodiment 1

[0040] High-purity C produced by Alfa Aisha Chemical Co., Ltd. 60 The fullerene powder is prefabricated into a cylindrical body with a diameter of 1.2mm and a height of 2.3mm, which is put into a hexagonal boron nitride crucible, and then loaded into a standard 8 / 3 high-temperature and high-pressure assembly block, and the assembly block is loaded into a T25 ultra- The high-pressure temperature synthesis device is heated for 120 minutes at a pressure of 25 GPa and a temperature of 1200 ° C. The synthesized transparent amorphous carbon block is as follows figure 1 As shown in a, its density is 3.4±0.1(g / cm 3 ).

[0041] Utilize X-ray diffractometer (Bruker D8, Germany) to obtain block and analyze, as figure 2 As shown, it can be seen that its phase composition is amorphous carbon; the obtained block was analyzed by Raman spectrometer (HORIBA Jobin Yvon), as shown in image 3 As shown, it can be seen that it is characterized by amorphous carbon, and there are sp 3 The infl...

Embodiment 2

[0043] High-purity C produced by Alfa Aisha Chemical Co., Ltd. 60 The fullerene powder is prefabricated into a cylindrical body with a diameter of 1.2mm and a height of 2.3mm, which is put into a hexagonal boron nitride crucible, and then loaded into a standard 8 / 3 high-temperature and high-pressure assembly block, and the assembly block is loaded into a T25 ultra- The high-pressure temperature synthesis device is heated for 120 minutes at a pressure of 25 GPa and a temperature of 1100 ° C. The synthesized amorphous carbon block is as follows figure 1 as shown in b.

[0044] Utilize X-ray diffractometer (Bruker D8, Germany) to obtain block and analyze, as figure 2 As shown, it can be seen that its phase composition is amorphous carbon; the obtained block was analyzed by Raman spectrometer (HORIBA Jobin Yvon), as shown in image 3 As shown, it can be seen that it is the characteristic of amorphous carbon; the analysis results of high-resolution electron microscope and elect...

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Abstract

The invention relates to a superhard semiconductor amorphous carbon block material and a preparation method thereof. The method includes the following steps: (1) prefabricating C60 fullerene into a columnar blank body; (2) loading the obtained columnar blank body into a hexagonal boron nitride crucible, and then loading into a high-temperature high-pressure assembly block; (3) placing the assemblyblock in high-temperature and high-pressure synthesis equipment for high-temperature and high-pressure treatment; and (4) acquiring the superhard semiconductor amorphous carbon block material after the treatment is completed. According to the preparation method of the superhard semiconductor amorphous carbon block material, the C60 fullerene powder is taken as a raw material, a high temperature and high pressure test is utilized, a phase change behavior of the C60 fullerene under high pressure is explored by regulating a relationship between temperature and pressure, and the amorphous carbonblock material with high hardness or superhard hardness, compactness and semiconductor properties is synthesized, so that the material has a wide application prospect.

Description

technical field [0001] The invention relates to the technical field of novel carbon materials, in particular to a superhard semiconductive amorphous carbon bulk material and a preparation method thereof. Background technique [0002] As a basic form of matter, amorphous has the characteristics of short-range order and long-range disorder in its microstructure. It has different physical and chemical properties from crystalline materials, and has important applications in the fields of structural materials and functional materials. For example, bulk metallic glass (BMG), which is several times stronger than the corresponding crystalline metal and has good ductility and corrosion resistance, is widely used in magnetic sensors, recording heads, magnetic shielding materials, etc.; amorphous Silicon (a-Si:H) thin films, with an optical bandgap of ~1.7eV, are the most commonly used photovoltaic semiconductors in solar cells. And "exploring new amorphous materials and their essence...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J3/06
Inventor 赵智胜张爽爽罗坤高宇飞何巨龙于栋利胡文涛田永君徐波
Owner YANSHAN UNIV
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