Superhard semiconducting amorphous carbon bulk material and preparation method thereof

A technology of bulk materials and semiconductors, applied in the application of ultra-high pressure processes, etc., can solve the problems of insufficient density and hardness, thin film thickness, etc., and achieve the effect of broad application prospects

Active Publication Date: 2020-08-18
YANSHAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] Based on this, it is necessary to provide a superhard semiconducting amorphous carbon bulk material and its preparation method for the current problems of insufficient density and hardness of amorphous carbon materials, thin film thickness, etc.

Method used

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  • Superhard semiconducting amorphous carbon bulk material and preparation method thereof
  • Superhard semiconducting amorphous carbon bulk material and preparation method thereof
  • Superhard semiconducting amorphous carbon bulk material and preparation method thereof

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preparation example Construction

[0022] The preparation method of the present invention is as follows:

[0023] (1) High-purity C 60 The fullerene powder is prefabricated into a cylindrical body with a diameter of 1.2 or 2 mm and a height of 2.3 mm;

[0024] (2) Put the obtained cylindrical body into a hexagonal boron nitride crucible, and then put it into a standard 8 / 3 high temperature and high pressure assembly block or a standard 10 / 5 high temperature and high pressure assembly block;

[0025] (3) Place the assembly block in a T25 ultra-high pressure thermosynthesis device for high temperature and high pressure treatment, the temperature of the high temperature and high pressure treatment is 500-2000°C, the pressure is 8-25GPa, and the holding time is 10-120 minutes;

[0026] (4) After the treatment is completed, a superhard semiconductor amorphous carbon bulk material with a diameter of 1-1.9mm and a height of 1.2-1.7mm is obtained.

[0027] Compared with the prior art, the present invention has the fo...

Embodiment 1

[0032] High-purity C produced by Alfa Aisha Chemical Co., Ltd. 60 The fullerene powder is prefabricated into a cylindrical body with a diameter of 1.2mm and a height of 2.3mm, which is put into a hexagonal boron nitride crucible, and then loaded into a standard 8 / 3 high-temperature and high-pressure assembly block, and the assembly block is loaded into a T25 ultra- The high-pressure temperature synthesis device is heated for 120 minutes at a pressure of 25 GPa and a temperature of 1200 ° C. The synthesized transparent amorphous carbon block is as follows figure 1 As shown in a, its density is 3.4±0.1(g / cm 3 ).

[0033] Utilize X-ray diffractometer (Bruker D8, Germany) to obtain block and analyze, as figure 2 As shown, it can be seen that its phase composition is amorphous carbon; the obtained block is analyzed by a Raman spectrometer (HORIBA Jobin Yvon), as shown in image 3 As shown, it can be seen that it is characterized by amorphous carbon, and there is sp 3 The influ...

Embodiment 2

[0035] High-purity C produced by Alfa Aisha Chemical Co., Ltd. 60 The fullerene powder is prefabricated into a cylindrical body with a diameter of 1.2mm and a height of 2.3mm, which is put into a hexagonal boron nitride crucible, and then loaded into a standard 8 / 3 high-temperature and high-pressure assembly block, and the assembly block is loaded into a T25 ultra- The high-pressure temperature synthesis device is heated for 120 minutes at a pressure of 25 GPa and a temperature of 1100 ° C. The synthesized amorphous carbon block is as follows figure 1 as shown in b.

[0036] Utilize X-ray diffractometer (Bruker D8, Germany) to obtain block and analyze, as figure 2 As shown, it can be seen that its phase composition is amorphous carbon; the obtained block is analyzed by a Raman spectrometer (HORIBA Jobin Yvon), as shown in image 3 As shown, it can be seen that it is the characteristic of amorphous carbon; the analysis results of high-resolution electron microscope and elect...

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Abstract

The invention relates to a superhard semiconductor amorphous carbon block material and a preparation method thereof. The method includes the following steps: (1) prefabricating C60 fullerene into a columnar blank body; (2) loading the obtained columnar blank body into a hexagonal boron nitride crucible, and then loading into a high-temperature high-pressure assembly block; (3) placing the assemblyblock in high-temperature and high-pressure synthesis equipment for high-temperature and high-pressure treatment; and (4) acquiring the superhard semiconductor amorphous carbon block material after the treatment is completed. According to the preparation method of the superhard semiconductor amorphous carbon block material, the C60 fullerene powder is taken as a raw material, a high temperature and high pressure test is utilized, a phase change behavior of the C60 fullerene under high pressure is explored by regulating a relationship between temperature and pressure, and the amorphous carbonblock material with high hardness or superhard hardness, compactness and semiconductor properties is synthesized, so that the material has a wide application prospect.

Description

technical field [0001] The invention relates to the technical field of novel carbon materials, in particular to a superhard semiconductor amorphous carbon bulk material and a preparation method thereof. Background technique [0002] As a basic form of matter, amorphous has the characteristics of short-range order and long-range disorder in its microstructure. It has different physical and chemical properties from crystalline materials, and has important applications in the fields of structural materials and functional materials. For example, bulk metallic glass (BMG), which is several times stronger than the corresponding crystalline metal and has good ductility and corrosion resistance, is widely used in magnetic sensors, recording heads, magnetic shielding materials, etc.; amorphous Silicon (a-Si:H) thin films, with an optical bandgap of ~1.7eV, are the most commonly used photovoltaic semiconductors in solar cells. And "exploring new amorphous materials and their essence"...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J3/06
Inventor 赵智胜张爽爽罗坤高宇飞何巨龙于栋利胡文涛田永君徐波
Owner YANSHAN UNIV
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