Single-size strong current cluster pulse beam generating method
A generation method and technology of clusters, which are applied in the direction of nuclear reaction targets, DC voltage accelerators, ion implantation plating, etc., can solve the problems that are difficult to meet the precise measurement and application research of cluster properties, and the cluster beam intensity is weak. , to achieve the effect of meeting the application requirements and strong instantaneous beam intensity
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Embodiment 1
[0026] Such as figure 1 As shown, the pulsed beam generation method of a single-sized intense current cluster includes the following steps:
[0027] Step 1. Preparation of a single-size cluster target
[0028] A continuous cluster beam 1 is generated by a conventional cluster source, and clusters of a single size are selected by a cluster mass selector 2, deposited on a low-temperature base 3, and xenon gas is sprayed on the surface of the low-temperature base 3 through a xenon nozzle 6 to form Solid-state xenon 4 film; the low-temperature base 3 rotates around an axis perpendicular to the cluster deposition direction, and translates and scans along the axis so that the clusters cover the entire surface, and a single-sized cluster 5 is embedded in the solid-state xenon 4 cluster Target 11;
[0029] Step 2. Launch a single-sized high-current cluster pulse beam
[0030] The cluster target 11 is irradiated with a pulsed laser 10 to rapidly vaporize the solid xenon 4 to form a ...
Embodiment 2
[0047] according to figure 1 The shown single-size high-current cluster pulse beam generation method, a set of system for generating single-size high-current cluster pulse beam is as follows figure 2 As shown, its operation process includes the following steps:
[0048] Step 1. Preparation of a single-size cluster target
[0049] A continuous cluster beam 1 is generated by a conventional cluster source, and clusters of a single size are selected by a cluster mass selector 2, deposited on a low-temperature base 3, and xenon gas is sprayed on the surface of the low-temperature base 3 through a xenon nozzle 6 to form Solid-state xenon 4 film; the low-temperature base 3 rotates around an axis perpendicular to the cluster deposition direction, and translates and scans along the axis so that the clusters cover the entire surface, and a single-sized cluster 5 is embedded in the solid-state xenon 4 cluster Target 11;
[0050] Step 2. Launch a single-sized high-current cluster puls...
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