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Device and method for growing semiconductor crystals

The technology of a growth device and a growth method is applied in the field of semiconductor material preparation, and can solve the problems of atmosphere doping, unsatisfactory quartz tube structure, etc.

Active Publication Date: 2021-04-16
FIRST SEMICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0012] The technical problem of the above-mentioned device 100 is that it is difficult to achieve atmosphere doping by adopting the vertical gradient solidification process under the quartz tube-PBN crucible system: firstly, there is no contact with C in the whole growth system, and secondly, the quartz tube is provided for crystal growth. Designed for a high vacuum environment, the structure of the quartz tube cannot meet the requirements of atmosphere doping

Method used

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  • Device and method for growing semiconductor crystals
  • Device and method for growing semiconductor crystals
  • Device and method for growing semiconductor crystals

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0051] Polycrystalline synthesis of 7N Ga and 7N As to form a GaAs polycrystalline material; put the synthesized 8Kg GaAs polycrystalline material into the second PNB crucible that has been pre-baked and oxidized, and fix the seed crystal on the first PBN crucible Cone part, put the boron oxide solid into the first PBN crucible; put the first PBN crucible into the first section of the quartz tube; put a 10g carbon cap on the cone part of the second PBN crucible, and then clamp it on the quartz In the transition section of the tube; put the GaAs polycrystalline material into the second PBN crucible, put the second PBN crucible into the second section of the quartz tube, put the quartz cap on the upper end of the second PBN crucible, after vacuuming, Weld the quartz cap and the second PBN crucible with an oxyhydrogen flame; put the welded second PBN crucible into the second section of the quartz tube, turn on the heater, and melt the GaAs polycrystalline material. Under the actio...

Embodiment 2

[0053] Polycrystalline synthesis of 7N Ga and 7N As to form GaAs polycrystalline material; put the synthesized 10Kg GaAs polycrystalline material into the second PNB crucible that has been pre-baked and oxidized, and fix the seed crystal on the first PBN crucible Cone part, put the boron oxide solid into the first PBN crucible; put the first PBN crucible into the first section of the quartz tube; put the 11g carbon cap on the cone part of the second PBN crucible, and then clamp it on the quartz In the transition section of the tube; put the GaAs polycrystalline material into the second PBN crucible, put the second PBN crucible into the second section of the quartz tube, put the quartz cap on the upper end of the second PBN crucible, after vacuuming, Weld the quartz cap and the second PBN crucible with an oxyhydrogen flame; put the welded second PBN crucible into the second section of the quartz tube, turn on the heater, and melt the GaAs polycrystalline material. Under the acti...

Embodiment 3

[0055] Polycrystalline synthesis of 7N Ga and 7N As to form a GaAs polycrystalline material; put the synthesized 12Kg GaAs polycrystalline material into the second PNB crucible that has been pre-baked and oxidized, and fix the seed crystal on the first PBN crucible Cone part, put the boron oxide solid into the first PBN crucible; put the first PBN crucible into the first section of the quartz tube; put the 12g carbon cap on the cone part of the second PBN crucible, and then clamp it on the quartz In the transition section of the tube; put the GaAs polycrystalline material into the second PBN crucible, put the second PBN crucible into the second section of the quartz tube, put the quartz cap on the upper end of the second PBN crucible, after vacuuming, Weld the quartz cap and the second PBN crucible with an oxyhydrogen flame; put the welded second PBN crucible into the second section of the quartz tube, turn on the heater, and melt the GaAs polycrystalline material. Under the ac...

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Abstract

The invention relates to a semiconductor crystal growth device, which includes a furnace body, the furnace body includes a support platform, a support rod vertically fixed on the support platform, and a heating chamber, and the heating chamber forms a closed cylindrical cavity , an erection hole is opened on the support rod, and the device also includes an annular heater located in the cavity, a quartz tube, a seed crystal, a carbon cap, a first PBN crucible, a second PBN crucible and a quartz cap , the quartz tube is erected on the support rod; the quartz tube includes a quartz nozzle and a quartz tube extending upward along the quartz nozzle, the quartz tube includes a first section, a second section and a transition section connecting the first section and the second section, the first The first section and the second section are straight cylinders, and the central axes of the first section and the second section are the same vertical line, the transition section is arc-shaped, and the radius of the straight cylinder of the second section is greater than that of the first section.

Description

technical field [0001] The invention relates to the field of semiconductor material preparation, in particular to a semiconductor crystal growth device and method. Background technique [0002] GaAs has excellent electrical properties such as high electron mobility, direct band gap, and wide band gap, and has been widely used in the fields of optoelectronics and microelectronics. Microelectronic ultra-high-speed circuits require semi-insulating GaAs single crystals with high resistance (greater than 107 Ω·cm). Generally speaking, high-purity GaAs itself is semi-insulating, but due to the complicated preparation process and high cost, industrial production uses a compensation mechanism to prepare high-resistance semi-insulating GaAs single crystals. [0003] Semi-insulating gallium arsenide (Si-GaAs) single crystals grown by liquid-encapsulated Czochralski (LEC) are widely used as substrate materials for microwave devices and high-frequency integrated circuits. With the dev...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/42C30B11/00
Inventor 王金灵廖彬周铁军刘留
Owner FIRST SEMICON MATERIALS