PIN diode and preparation method thereof

Abstract

The invention discloses a PIN diode and a preparation method thereof. The PIN diode comprises a first electrode, a substrate, an epitaxial layer, a p-type material layer and a second electrode laminated in sequence, the substrate is an n-type highly-doped gallium oxide substrate, and the epitaxial layer is an n-type low-doped gallium oxide epitaxial layer. The p-type material layer, the epitaxiallayer and the substrate form a heterojunction so that problems of high technical difficulty and high cost during fabrication of a semiconductor device due to difficult realization of p-type doping ofthe conventional gallium oxide material are solved; and the gallium oxide material has excellent semiconductor characteristic so that the fabricated PIN diode has important application prospect in fields including high-frequency electronic devices.

Description

technical field [0001] Embodiments of the present invention relate to semiconductor technology, and in particular to a PIN (Positive Intrinsic Negative) diode and a manufacturing method thereof. Background technique [0002] Gallium oxide is a wide bandgap semiconductor material. The bandgap width of β-Ga2O3 is about 4.85eV, its critical breakdown electric field is as high as 8MV / cm, and n-type doping is controllable, radiation resistant, high melting point, very suitable for making High voltage power electronic devices. Its applications include power electronic devices, radio frequency electronic devices, ultraviolet detectors, gas sensors, etc., and have broad application prospects in solid-state lighting, communications, consumer electronics, new energy vehicles, and smart grids. Gallium oxide has better high-voltage resistance characteristics than third-generation semiconductor materials such as silicon carbide. Its Baliga figure of merit (BFOM) is about 4 times higher ...

AI Technical Summary

Problems solved by technology

[0003] Research on gallium oxide is still in its infancy. Although experiments have shown that the test value of the breakdown electric field of gallium oxide devices has exceeded the theoretical value of gallium nitride and silicon carbide, the electrical characteristics of gallium oxide devices under current process conditions are compared with other There is still a certain gap in the third generation of semiconductor devices

Due to the deep energy level of the gallium oxide acceptor and the hole self-confinement effect, it is difficult to dope traditional p-type acceptor elements into gallium oxide to form a p-type material. PN junction is usually accompanied by high technical difficulty and high cost

This largely limits the use of gallium oxide materials to make PIN diodes, that is, it is impossible to use gallium oxide materials to make high-performance PIN diodes

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