Inorganic-organic/inorganic hybrid dual-layer nano-film memristor for simulating nerve synapses, and preparation method of memristor

Abstract

The invention discloses an inorganic-organic/inorganic hybrid dual-layer nano-film memristor for simulating nerve synapses, and belongs to the cross field of semiconductor microelectronic devices andartificial intelligence. A molecular layer deposition technology and an atomic layer deposition technology are utilized to prepare the inorganic-organic/inorganic hybrid dual-layer nano-film memristorwith a good nerve synapse simulation bionic function; and the adopted molecular layer deposition and atomic layer deposition technologies can be compatible with a microelectronic process and are suitable for large-scale integration. The memristor comprises a substrate, a bottom electrode, a memristor functional layer and a top electrode in sequence from bottom to top, wherein the memristor functional layer consists of two layers of nano-stack structure film materials including a lower-layer inorganic-organic hybrid film and an upper-layer metal oxide film.

Description

technical field [0001] The invention belongs to the intersection field of semiconductor microelectronic devices and artificial intelligence, and in particular relates to an inorganic-organic / inorganic hybrid double-layer nanometer film memristor simulating neural synapses and a preparation method thereof. Background technique [0002] Memristor is the fourth passive circuit device after resistors, capacitors, and inductors. In 1971, when Chinese scientist Professor Cai Shaotang studied the relationship between voltage, current, charge, and magnetic flux, according to the integrity of the mathematical logic relationship propose. The resistance of a memristor can change with voltage, and it can remember the changed state, that is, the resistance value at a certain moment is related to the current flowing through the device. This feature is very similar to the working principle of synapses in organisms. The connection strength between synapses changes with the stimulation of e...

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Problems solved by technology

[0003] In previous studies, most of the memristive functional layers were made of inorganic materials, and a small amount of organic memristive materials were involved. For inorganic-organic hybrid materials, their application in new neuromorphic devices can make use of the excellent photoelectric properties of inorganic materials. characteristics, and can combine the diversity of organic species (functional groups) and easy processing characteristics to take advantage of the hybridization of the two, open up new ideas for the selection of memristor materials, and provide a broader prospect for the application of memristors, but The report of inorganic-organic hybrid material system in memristor is still very rare, especially for the realization of synapse-like bionic function, which has not been reported so far.

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