Quantum dot film and preparation method thereof, qled device and preparation method thereof

A quantum dot and quantum dot luminescence technology, which is applied in the field of quantum dots, can solve the problems of poor uniformity of quantum dot films, easy aggregation and sedimentation of ligands, and selectivity limitations, so as to expand the range of solvent selection, improve luminescence performance, and selectivity. wide range of effects

Active Publication Date: 2020-11-13
TCL CORPORATION
View PDF3 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, to provide a quantum dot thin film and its preparation method, aiming to solve the problem that the ligands are easy to agglomerate and settle, and the selectivity is limited in the preparation process of the existing quantum dot thin film, so that quantum dots can be obtained. Technical problems of poor film uniformity and low efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Quantum dot film and preparation method thereof, qled device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

preparation example Construction

[0025] On the one hand, an embodiment of the present invention provides a method for preparing a quantum dot film, comprising the following steps:

[0026] S01: Provide a quantum dot prefabricated film and a solution containing replacement ligands. The quantum dots in the quantum dot prefabricated film contain initial surface ligands. The general structural formula of the replacement ligand is: X-R;

[0027] Wherein, X is a functional group that can be combined with the surface of the quantum dot, and R is a hydrocarbon group or a hydrocarbon derivative with a conjugated group;

[0028] S02: performing liquid-phase ligand replacement on the quantum dot prefabricated film and the solution containing the replacement ligand, to obtain a quantum dot film with the replacement ligand bound to the surface of the quantum dot.

[0029] The preparation method of the quantum dot thin film provided by the embodiment of the present invention is to perform in-situ ligand replacement after t...

Embodiment 1

[0070] A method for preparing a quantum dot film, comprising the steps of:

[0071] Provide CdSe quantum dot prefabricated film and replacement ligand solution (aniline ethanol solution), the initial surface ligand in this quantum dot prefabricated film is OA;

[0072] Immerse the CdSe quantum dot prefabricated film into the replacement ligand solution, take it out after soaking for 10min, and then transfer it to a vacuum chamber, adjust the vacuum degree to 10Pa and maintain it for 30min to remove the uncoordinated ligand and solvent of the quantum dot film .

Embodiment 2

[0074] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0075] Dissolve aniline in ethanol to prepare a displacement ligand solution;

[0076] Print the PEDOT hole injection layer, TFB hole transport layer, and CdSe quantum dot film sequentially on the ITO anode, then immerse the CdSe quantum dot film in the above replacement ligand solution, take it out after soaking for 10min, and then transfer it to the vacuum chamber , adjust the vacuum degree to 10 Pa and maintain it for 30 minutes to remove uncoordinated ligands and solvents in the quantum dot film to obtain a quantum dot light-emitting layer;

[0077] A ZnO electron transport layer is printed on the ligand-exchanged quantum dot light-emitting layer, and finally an Al cathode is evaporated to obtain a positive-type structure quantum dot light-emitting diode.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention belongs to the technical field of quantum dots, and particularly relates to a quantum dot film, a preparation method thereof, a QLED (Quantum dot Light-Emitting Diode) device and a preparation method thereof. The preparation method of the quantum dot film comprises the steps of providing a quantum dot prefabricated film and a solution containing a displacement ligand, wherein the quantum dot in the quantum dot prefabricated film contains an initial surface ligand, the structural general formula of the displacement ligand is X-R, X is a functional group capable of being bound withthe surface of the quantum dot, and R is an alkyl or alkyl derivative with a conjugated group; and carrying out gas-phase ligand displacement on the quantum dot prefabricated film and the solution containing the displacement ligand to obtain a quantum dot film with the quantum dot surface being bound with the displacement ligand. The displacement ligand with the conjugated group is adopted to carry out ligand displacement without the problem of solution settlement, and electrons are enabled to have a delocalization effect, so that the carrier transmission in the quantum dot film is improved,and the light-emitting performance of the device can be correspondingly improved.

Description

technical field [0001] The invention belongs to the technical field of quantum dots, and in particular relates to a quantum dot thin film and a preparation method thereof, as well as a QLED device and a preparation method thereof. Background technique [0002] Quantum dot light-emitting diode (QLED) is a new type of light-emitting device, which uses quantum dot materials (Quantum dots, QDs) as the light-emitting layer, which has incomparable advantages compared with other light-emitting materials, such as Controlled small size effect, ultra-high internal quantum efficiency, excellent color purity, etc., have great application prospects in the field of display technology in the future. In general, organic ligands are attached to the surface of quantum dots through chelation and other methods. [0003] The surface ligands of quantum dots play a vital role in the synthesis of quantum dots. On the one hand, surface ligands can passivate the defects on the surface of quantum dot...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/06H01L33/00
Inventor 曹蔚然杨一行向超宇钱磊梁柱荣
Owner TCL CORPORATION
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap