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Hole-digging acid liquor additive for reducing suede difference of polycrystalline black silicon made wool and application thereof

An additive and polysilicon technology, which is applied in the growth of polycrystalline materials, after treatment, and crystal growth, etc., can solve the problems of the uniformity of submicron suede structure, the appearance of polycrystalline black silicon solar cells and the efficiency of modules, etc., to achieve Effects of reduced etching rate, reduced surface tension, and low reflectivity

Active Publication Date: 2019-06-28
DONGHUA UNIV +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] The technical problem to be solved by the present invention is to provide a hole-digging acid additive that reduces the difference in the suede surface after polycrystalline black silicon is made, and overcomes the large differences in the regions of different crystal plane orientations in the prior art, resulting in submicron suede. The uniformity of the structure is affected, which affects the appearance of polycrystalline black silicon solar cells and the defects of module efficiency

Method used

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  • Hole-digging acid liquor additive for reducing suede difference of polycrystalline black silicon made wool and application thereof
  • Hole-digging acid liquor additive for reducing suede difference of polycrystalline black silicon made wool and application thereof
  • Hole-digging acid liquor additive for reducing suede difference of polycrystalline black silicon made wool and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0080] (1) The specific process steps of pre-cleaning:

[0081] Step 1: In the acid and alkali tank according to concentrated H 2 SO 4 (95wt%): H 2 o 2 (30wt%) volume ratio is 3:1 configuration reaction solution;

[0082] Step 2: immerse the polysilicon wafer in the above reaction solution and boil for 30 minutes;

[0083] Step 3: configure 2wt% HF solution in the acid and alkali resistant tank;

[0084] Step 4: Submerge the polysilicon wafer in the above HF solution for 300s;

[0085] (2) Concrete process steps of coarse alkali throwing:

[0086] Step 1: configure a KOH solution with a concentration of 9wt% in the acid and alkali resistant tank;

[0087] Step 2: Heat the solution to 80°C;

[0088] Step 3: immerse the polysilicon wafer in the above KOH solution and react for 210s;

[0089] (3) Specific process steps of silver plating:

[0090] Step 1: Configure 0.6wt% HF and 1.4×10 -3 wt% AgNO 3 The mixed reaction solution;

[0091] Step 2: immerse the polysilicon...

Embodiment 2

[0110] On the basis of embodiment 1, the difference is:

[0111] In the concrete process step of described hole digging, the hole digging etchant is made of 10wt% H 2 o 2 , 4wt% HF and 1wt% hole-digging acid additive;

[0112] The hole-digging acid liquid additive is composed by weight percentage: 1 wt% of polyoxyethylene lauryl ether, 1.2 wt% of tartaric acid, 0.8 wt% of sodium alginate, 1 wt% of aspartic acid, and 2 wt% of triethylene glycol %, diethylene glycol monomethyl ether 1wt%, ultrapure water 93wt%.

[0113] Finally, the appearance photo of polycrystalline black silicon is as follows: Figure 7 As shown, it can be seen that the use of polycrystalline black silicon pore-digging additives for texturing can effectively improve the crystal flower problem, the color difference between crystal planes with different orientations is small, and the textured surface is uniform. Such as Figure 8 As shown, a submicron meter-scale hemispherical texture is formed on the surf...

Embodiment 3

[0115] On the basis of embodiment 2, the difference is:

[0116] In the specific process steps of digging, the digging time is 180s;

[0117] In the specific process steps of hole expansion, the hole expansion time is 160s.

[0118] The finally obtained polycrystalline black silicon looks like Figure 11 As shown, the use of polycrystalline black silicon pore-digging additives for texturing can effectively solve the problem of crystal cracks after polycrystalline silicon texturing, and there is no difference in the texture of grains with different crystal orientations. Such as Figure 12 As shown, the surface SEM image of the polycrystalline black silicon prepared in Example 3 shows that the pore diameter of the polycrystalline black silicon after texturing is between 650 and 850 nm. Such as Figure 13 As shown, it can be seen from the SEM image of the polycrystalline black silicon section prepared in Example 3 that the submicron hole depth is between 350-600 nm. Such as ...

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Abstract

The invention relates to a hole-digging acid liquor additive for reducing suede difference of polycrystalline black silicon made wool and an application thereof. The additive is prepared from the following components in percent by weight: 0.5-1wt% of polyoxyethylene lauryl ether, 0.5-1.5wt% of tartaric acid, 0.5-2wt% of sodium alginate, 1-3wt% of aspartic acid, 1-5wt% of tri ethylene glycol, 0.5-1wt% of diethylene glycol monomethyl ether and 86.5-96wt% of super pure water. The bore depth and the bore diameter of submicron order holes are controlled by regulating process parameters of the hole-digging time and the hole-expanding time, so that the suede structure and the reflectivity further meet the performance demand of a polycrystalline silicon solar battery, and the additive is beneficial for a follow-up process and improvement of conversion efficiency of the polycrystalline silicon solar battery.

Description

technical field [0001] The invention belongs to the field of hole-digging additives and applications thereof, and in particular relates to a hole-digging acid liquid additive for reducing the difference of suede surface after polycrystalline black silicon texturing and its application. Background technique [0002] In the field of solar cells, crystalline silicon solar cells have always occupied more than 85% of the market share. Cost reduction and efficiency improvement are the two major goals of crystalline silicon solar cells. Optical loss directly affects the photoelectric conversion efficiency of solar cells. The micron-scale worm-like structure prepared by the traditional polycrystalline silicic acid texturing process on the diamond wire-cut polysilicon has a high reflectivity, and black silicon can achieve low surface reflectivity due to its submicron geometric structure, making crystalline silicon solar cells net efficiency is improved. [0003] Black silicon solar ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/06C30B33/10H01L31/0236
CPCY02E10/50
Inventor 张青红冯贵标柳杉隋阳沈轩宇黄治国侯成义李耀刚王宏志
Owner DONGHUA UNIV
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