Preparation method of high-power LED
A high-power, chip technology, applied in the direction of electrical components, circuits, semiconductor devices, etc., can solve the problems of shortened life of high-power LEDs, unstable light wavelength, and easy aging of the lens, and achieve oxidation resistance, UV resistance, and easy control , the effect of strong adhesion
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Embodiment 1
[0038] A method for preparing a high-power LED, comprising the steps of:
[0039] (1) Die-bonding: Fix the cut chip in the bracket with a die-bonding glue;
[0040] (2) One-time baking: Put it in a baking oven and bake until the crystal-bonding gel solidifies;
[0041] (3) Welding wire: welding the gold wire on the electrode;
[0042] (4) Encapsulation lens: Encapsulate the chip and bracket in the resin lens;
[0043] (5) Glue injection curing: use glue to bond the lens with the chip and the bracket;
[0044] (6) Secondary baking: Put it in a baking oven for secondary baking until the resin lens and glue are solidified;
[0045] (7) Welding: welding the LED on the substrate;
[0046] Wherein, the resin used in the resin lens described in step (4) includes the following raw materials in parts by weight: 15 parts of 1,4 cyclohexanediol, 30 parts of dodecyl cycloalkanediol, 45 parts of phthalic anhydride, 50 parts of bisphenol A novolac epoxy resin, 3 parts of powder non-tox...
Embodiment 2
[0057] The difference between embodiment 2 and embodiment 1 is that
[0058] The resin used in the resin lens described in step (4) includes the following raw materials in parts by weight: 30 parts of 1,4 cyclohexanediol, 30 parts of dodecyl cycloalkanediol, 60 parts of phthalic anhydride, bisphenol 60 parts of type A novolac epoxy resin, 5 parts of powder non-toxic phosphite, and 3 parts of phenyl o-hydroxybenzoate.
[0059]Further, the die-bonding glue in the step (1) is silver glue, and the height of the silver glue around the chip is 1 / 2 of the height of the chip.
[0060] Further, the baking process in the step (2) is as follows: the baking temperature is 175° C., and the baking time is 40 minh.
Embodiment 3
[0062] The difference between Example 3 and Example 1 is that the glue in the step (5) is epoxy resin glue, and the epoxy resin glue includes the following raw materials in parts by weight: 50 parts of bisphenol F type epoxy resin, diamino 20 parts of diphenylmethane, 20 parts of m-aminomethylamine, 0.05 parts of 2-ethyl-4-methylimidazole, and 0.05 parts of 1-benzyl-2-methylimidazole.
[0063] Further, the temperature of the secondary baking in the step (6) is 135°C, and the secondary baking time is 0.5h.
[0064] Further, the substrate in step (7) includes a copper substrate and an aluminum substrate welded to the bottom of the copper substrate, and the thickness ratio of the copper substrate to the aluminum substrate is 3:1.
[0065] Further, the soldering step described in step (7) uses silver-tin solder paste, and the silver-tin solder paste includes the following raw materials in parts by weight: 65 parts of silver; 40 parts of tin, 15 parts of dipropanol, nano silicon di...
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