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Compound semiconductor substrate manufacturing method and compound semiconductor substrate

A technology of nitride semiconductors and manufacturing methods, applied in semiconductor/solid-state device manufacturing, semiconductor devices, chemical instruments and methods, etc., capable of solving problems such as increased resistance

Active Publication Date: 2019-07-02
AIR WATER INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Current collapse is a phenomenon in which electrons are trapped in defects near the channel when a high voltage is applied to the electrodes of the device, resulting in an increase in on-resistance

Method used

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  • Compound semiconductor substrate manufacturing method and compound semiconductor substrate
  • Compound semiconductor substrate manufacturing method and compound semiconductor substrate
  • Compound semiconductor substrate manufacturing method and compound semiconductor substrate

Examples

Experimental program
Comparison scheme
Effect test

no. 1 Embodiment

[0060] The inventors of the present application produced Samples 1 to 6 under different conditions, and measured the longitudinal withstand voltages of Samples 1 to 6 .

[0061] image 3 It is a cross-sectional view showing the structure of the compound semiconductor substrate CS1 which is the common structure of the samples 1 to 6 in the first embodiment of the present invention. Figure 4 It is a table showing the relationship between the respective production conditions of Samples 1 to 6 in the first example of the present invention and the measured longitudinal withstand voltage.

[0062] refer to image 3 as well as Figure 4 , the compound semiconductor substrate CS1 includes a substrate SB, an AlN layer AL, an Al nitride semiconductor layer 5 , a GaN layer 6 , and an Al nitride semiconductor layer 7 . On the substrate SB, an AlN layer AL, an Al nitride semiconductor layer 5 , a GaN layer 6 , and an Al nitride semiconductor layer 7 are sequentially stacked and formed....

no. 2 Embodiment

[0075] The inventors of the present application produced Samples 11 to 15 under different conditions, and measured the vertical withstand voltages of Samples 11 to 15 .

[0076] Figure 6 It is a table showing the relationship between the production conditions of Sample 11 to Sample 15 and the measured longitudinal withstand voltage in the second example of the present invention.

[0077] refer to Figure 6 , the preparation conditions of each of Samples 11 to 15 are as follows.

[0078] Sample 11 (example of the present invention): in figure 1 In the shown compound semiconductor substrate CS, an LT-AlN layer is formed at a film formation temperature of 900°C, and an HT-AlN layer is formed on the LT-AlN layer at a film formation temperature of 1200°C. Layers other than these are formed by the methods described in the above-mentioned embodiments.

[0079] Sample 12 (example of the present invention): in figure 1 In the shown compound semiconductor substrate CS, an LT-AlN l...

no. 3 Embodiment

[0086] The inventors of the present application produced samples 21 to 25 under different conditions, and measured the capacitance recovery characteristics of samples 11 to 15 .

[0087] Figure 7 It is a table which shows each preparation conditions of the sample 21 - the sample 25 in the 3rd Example of this invention.

[0088] refer to Figure 7 , the preparation conditions of each of Samples 21 to 25 are as follows.

[0089] Sample 21 (example of the present invention): in image 3 In the compound semiconductor substrate CS1 shown, a substrate in which a SiC layer is formed on a Si substrate is used as the substrate SB. On the substrate SB, as the AlN layer AL, an LT-AlN layer was formed at a film formation temperature of 800°C, and an HT-AlN layer was formed on the LT-AlN layer at a film formation temperature of 1200°C. In the lower part of the GaN layer 6 is formed a 1×10 19 atom / cm 3 Such an average concentration of C in the C-GaN layer. Layers other than these ar...

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Abstract

A compound semiconductor substrate manufacturing method provided with: a step of forming a silicon carbide (SiC) layer on a silicon (Si) substrate; a step of forming, on the SiC layer, a low temperature (LT)-aluminum nitride (AlN) layer having a thickness of not less than 12 nm and not more than 100 nm at not less than 700 DEG C and not more than 1000 DEG C; a step of forming, on the LT-AlN layer,a high temperature (HT)-AlN layer at a temperature higher than the temperature for forming the LT-AlN layer; a step of forming, on the HT-AlN layer, an aluminum (Al) nitride semiconductor layer; a step of forming, on the Al nitride semiconductor layer, a gallium nitride (GaN) layer; and a step of forming, on the GaN layer, an Al nitride semiconductor layer.

Description

technical field [0001] The present invention relates to a method for manufacturing a compound semiconductor substrate and a compound semiconductor substrate, and more specifically, to a compound semiconductor substrate including a SiC (silicon carbide) layer. Background technique [0002] GaN (gallium nitride) is known as a wide bandgap semiconductor material having a larger bandgap than Si (silicon) and a higher dielectric breakdown electric field strength than Si (silicon). Since GaN also has higher resistance to dielectric breakdown than other wide-bandgap semiconductor materials, it is expected to be applied to next-generation low-loss power devices. [0003] When a Si substrate is used as the raw material substrate (base substrate) of a semiconductor device using GaN, warpage easily occurs on the substrate due to the large difference in lattice constant and thermal expansion coefficient between GaN and Si. cracks in the layer. [0004] In the following Patent Document...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/20C23C16/34C30B25/18C30B29/38H01L21/205H01L21/338H01L29/778H01L29/812
CPCC23C16/34C30B25/18C30B29/38H01L21/02381H01L21/02447H01L21/02458H01L21/02505H01L21/0254H01L21/0262H01L29/778H01L29/812H01L29/66431H01L21/324H01L2924/10323H01L2924/1033H01L2924/10272H01L21/02529H01L29/1608H01L29/2003H01L29/205H01L29/267H01L29/7786
Inventor 生川满久铃木悠宜大内澄人
Owner AIR WATER INC
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