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A kind of method and its application of reducing the contact resistance of n-type algan series material

A contact resistance, n-type technology, applied in the direction of circuits, electrical components, semiconductor devices, etc., can solve problems such as difficulty in ohmic contact preparation, achieve the effect of ensuring repeatability and reliability, good process compatibility, and improving performance

Active Publication Date: 2021-02-09
北京中博芯半导体科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In view of the above existing problems and deficiencies, the present invention provides a method that can significantly reduce the contact resistance of n-type AlGaN materials, and solve the problem of difficulty in preparing ohmic contacts of n-type AlGaN materials with high Al composition

Method used

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  • A kind of method and its application of reducing the contact resistance of n-type algan series material
  • A kind of method and its application of reducing the contact resistance of n-type algan series material
  • A kind of method and its application of reducing the contact resistance of n-type algan series material

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Embodiment 1

[0039] This embodiment provides a method for reducing the contact resistance of an n-type AlGaN material, including:

[0040] (1) Epitaxial growth of AlN layer, AlN / AlGaN superlattice layer, and n-AlGaN layer on the substrate in sequence;

[0041] (2) Etching part of the n-AlGaN layer, the etching depth is 200nm; the etching can be wet etching, dry ICP etching or RIE etching;

[0042] (3) In protective gas N 2 , under the condition of the flow rate of 9000sccm, the NH with the flow ratio of 3:1 3 with N 2 The mixed gas is used as process gas, and the material obtained in step (2) is subjected to high-temperature treatment;

[0043]The temperature of the high temperature treatment is 900°C, the pressure is 100mbar, and the treatment time is 30min; during the high temperature treatment, the heating and cooling rate is 2°C / sec;

[0044] After the high temperature treatment, cool down to room temperature.

[0045] Effect test:

[0046] Sample 1: the n-type AlGaN material obt...

Embodiment 2

[0054] This embodiment provides a method for preparing a deep ultraviolet LED chip, comprising the following steps:

[0055] (1) Epitaxial growth of AlN layer 2, AlN / AlGaN layer 3, n-AlGaN layer 4, multiple quantum well layer 5, p-AlGaN layer 6 and p-GaN layer 7 on the clean sapphire surface 1 in sequence by using MOCVD equipment, and structured as image 3 as shown in (a);

[0056] (2) By photolithography and ICP etching technology, remove the p-GaN layer, p-AlGaN layer, multi-quantum well layer and n-AlGaN layer of partial thickness in some areas, exposing the n-AlGaN layer surface, such as image 3 as shown in (b);

[0057] (3) Through photolithography and ICP etching technology, the deep etching channel of the chip is prepared, extending to the sapphire surface, and the chip is divided into independent units, such as image 3 as shown in (c);

[0058] (4) with N 2 +H 2 / NH 3 It is the process gas, and the material obtained in step (3) is subjected to high-temperatur...

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Abstract

The present invention relates to a method for reducing the contact resistance of an n-type AlGaN-based material and its application. The method for reducing the contact resistance of the n-type AlGaN series material includes: firstly removing the n-AlGaN layer with a depth of 1 / 5-1 / 2 by etching, and then performing high temperature treatment on the surface of the etched n-AlGaN layer. The method solves the ohmic contact problem of the existing high Al composition n-AlGaN material, significantly reduces the contact resistance of the high Al composition n-AlGaN material, improves the electrical properties of the material, and the work of the related device prepared therefrom. The voltage can be greatly reduced, greatly reducing the heat dissipation of the device, and further improving the performance of the device.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a method for reducing the contact resistance of n-type AlGaN materials and an application thereof. Background technique [0002] Ultraviolet LEDs, especially AlGaN-based deep ultraviolet LEDs (DUV-LEDs) with a luminous wavelength of less than 280nm, due to their great application prospects in the fields of ultraviolet curing, medical treatment, military affairs, water / air purification, sterilization and disinfection, etc., have been widely used in recent years. It has attracted the attention of countless domestic and foreign researchers and has become one of the research hotspots of wide bandgap semiconductors. [0003] However, for AlGaN with high Al composition used in deep ultraviolet LD, LED and other optoelectronic devices, its n-type contact performance is mainly limited by two aspects compared with GaN materials. increase, the gradual increase of deep-level defects leads to ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/32H01L33/00H01L21/324H01L21/306
CPCH01L21/30604H01L21/3065H01L21/324H01L33/0095H01L33/32
Inventor 许福军沈波张娜康香宁秦志新于彤军吴洁君
Owner 北京中博芯半导体科技有限公司
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