A kind of LED chip with composite transparent electrode and its manufacturing method

A technology of LED chips and transparent electrodes, applied in circuits, electrical components, semiconductor devices, etc., can solve the problems of high sheet resistance, high resistance, and high forward voltage of the chip, improve contact performance and transmittance, simple process, Easy-to-use effects

Inactive Publication Date: 2018-06-22
GUANGDONG DELI PHOTOELECTRIC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, due to the thin thickness of graphene, its sheet resistance is high, and it faces the problems of high resistance and high forward voltage of the chip when it is used alone as a conductive film.

Method used

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  • A kind of LED chip with composite transparent electrode and its manufacturing method

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0027] Embodiment 1: as figure 1 As shown, a kind of LED chip with composite transparent electrode, using MOCVD method on Al 2 o 3 Or on the GaN substrate (1) sequentially grow gallium nitride buffer layer (2), N-GaN layer (3), quantum well layer (4), P-GaN layer (5); coating on the P-GaN layer A layer of photoresist, then exposure and development, and one side of the P-GaN layer is etched to the N-GaN layer (3) by ICP (Reactive Ion Etching); first, graphene oxide and polymethacrylate The ester (PMMA) material is uniformly mixed and coated on the substrate wafer, so that the graphene oxide can be tightly attached to the wafer in the reactor without being blown away by the carrier gas or protective gas, and the PMMA Also play the mechanical support effect to reaction product-graphene; 2 is the carrier gas, N 2 In order to protect the gas, a layered film (6) of graphene is obtained by chemical vapor deposition; the layered film (6) prepared by the above steps is immersed in ...

Embodiment 2

[0028] Embodiment 2: as figure 1 As shown, a kind of LED chip with composite transparent electrode, using MOCVD method on Al 2 o 3 Or on the GaN substrate (1) sequentially grow gallium nitride buffer layer (2), N-GaN layer (3), quantum well layer (4), P-GaN layer (5); coating on the P-GaN layer A layer of photoresist, then exposure and development, and one side of the P-GaN layer is etched to the N-GaN layer (3) by ICP (reactive ion etching method); first, graphene and polymethyl methacrylate (PMMA) materials are uniformly mixed and coated on the substrate wafer, so that graphene can be tightly attached to the wafer in the reactor without being blown away by the carrier gas or protective gas, and PMMA also acts To the mechanical support of the reaction product-graphene; the above-mentioned material is placed in a medium temperature tube furnace, with H 2 is the carrier gas, N 2In order to protect the gas, a layered film (6) of graphene is obtained by chemical vapor deposit...

Embodiment 3

[0029] Embodiment 3: as figure 1 As shown, a kind of LED chip with composite transparent electrode, using MOCVD method on Al 2 o 3 Or on the GaN substrate (1) sequentially grow gallium nitride buffer layer (2), N-GaN layer (3), quantum well layer (4), P-GaN layer (5); coating on the P-GaN layer A layer of photoresist, then exposure and development, and one side of the P-GaN layer is etched to the N-GaN layer (3) by ICP (Reactive Ion Etching); first, graphene oxide and polymethacrylate The ester (PMMA) material is uniformly mixed and coated on the substrate wafer, so that the graphene oxide can be tightly attached to the wafer in the reactor without being blown away by the carrier gas or protective gas, and the PMMA Also play the mechanical support effect to reaction product-graphene; 2 is the carrier gas, N 2 In order to protect the gas, a layered film (6) of graphene is obtained by chemical vapor deposition; the layered film (6) prepared by the above steps is immersed in ...

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Abstract

The invention discloses an LED chip of a novel composite transparent electrode. The LED chip of the novel composite transparent electrode comprises a GaN buffer layer, an N-GaN layer, a quantum well layer, a P-GaN layer, a composite transparent electrode layer, SiO2 protective layers, an n-type electrode and a p-type electrode, wherein the GaN buffer layer, the N-GaN layer, the quantum well layer and the P-GaN layer are sequentially arranged on a substrate, and the n-type electrode corresponds to the p-type electrode. The LED chip of the novel composite transparent electrode is characterized in that the composite transparent electrode layer is formed by a graphene layered thin film and a ZnO transparent conducting thin film in a compounded mode. The invention further discloses a manufacturing method of the LED chip. Due to the non-ohmic contact characteristics of a ZnO material and the P-GaN layer, the application of ZnO to an LED electrode can be greatly limited. The graphene material has visible light transmittance of 97% within the visible light spectral range and excellent conductivity and mechanical performance, when the graphene material is used in a P-type electrode contact layer, the graphene material can also make good contact with the P-GaN, a layer of ZnO is grown on the graphene, the current spreading characteristic of the graphene can also be improved, after the ZnO and the graphene are compounded, an LED composite transparent electrode layer is formed, and both the contact performance and the transmittance can be greatly improved.

Description

technical field [0001] The invention relates to the technical field of LED chips, in particular to an LED chip with composite transparent electrodes and a manufacturing method thereof. Background technique [0002] As a new type of wide-bandgap semiconductor material, ZnO has the same structure and similar photoelectric properties as GaN, and even surpasses GaN in terms of exciton emission performance, making it an excellent candidate for high-efficiency LEDs and UV wavelength LEDs By. ZnO transparent conductive film has high transmittance in the visible light spectrum, and its electrical conductivity is close to that of metal film, which is very close to that of ITO film. The doped or composite ZnO transparent conductive film has electrical and optical properties comparable to ITO film. characteristic. In addition, compared with ITO, ZnO has the advantages of non-toxic, non-polluting, abundant raw materials, and low cost. The doped ZnO transparent conductive film has elec...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L33/00H01L33/42
CPCH01L33/0062H01L33/42H01L2933/0016
Inventor 李方芳郝锐王波罗长得易翰翔刘洋许德裕
Owner GUANGDONG DELI PHOTOELECTRIC
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