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Xylene gas sensor based on SnO2-Co3O4 heterojunction nanostructure sensitive material and preparation method thereof

A sno2-co3o4, gas sensor technology, applied in the direction of material electrochemical variables, etc., can solve problems such as low response, and achieve the effect of simple preparation method, low cost, and simple device process

Inactive Publication Date: 2019-08-02
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] co 3 o 4 As a representative p-type semiconductor functional material, it is suitable for applications in various fields such as lithium-ion batteries, supercapacitors, and heterogeneous catalysis, but since they generally have a lower response than n-type semiconductors, including Co 3 o 4 All p-type semiconductor oxides including seldom used in their pristine form for sensing applications

Method used

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  • Xylene gas sensor based on SnO2-Co3O4 heterojunction nanostructure sensitive material and preparation method thereof
  • Xylene gas sensor based on SnO2-Co3O4 heterojunction nanostructure sensitive material and preparation method thereof
  • Xylene gas sensor based on SnO2-Co3O4 heterojunction nanostructure sensitive material and preparation method thereof

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Embodiment 1

[0045] Use SnO 2 -Co 3 o 4 Heterojunction nanostructures are used as sensitive materials to make xylene sensors. The specific manufacturing process:

[0046] (1) First measure 20mL of deionized water and 20mL of ethylene glycol, pour them into a beaker, and keep stirring;

[0047] (2) Add 0.25g cobalt acetate tetrahydrate, 0.5g polyvinylpyrrolidone, and 0.5g glutamic acid to a beaker uniformly mixed with deionized water and ethylene glycol; after stirring for 15 minutes, add 0.2g urea and 0.05 g tin chloride pentahydrate, and keep stirring until it all dissolves;

[0048] (3) Transfer the above solution to a hydrothermal kettle, keep it at 160°C for 12 hours, take it out, cool it down to room temperature naturally, wash the resulting precipitate with deionized water and ethanol for several times, and then dry it at room temperature. Calcined at 450°C for 2 hours to obtain SnO 2 -Co 3 o 4 Heterojunction Nanostructured Powders.

[0049] (4) Take appropriate amount of dei...

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Abstract

The invention, which belongs to the technical field of semiconductor oxide gas sensors, relates to a xylene gas sensor based on the SnO2-Co3O4 heterojunction nanostructure sensitive material and a preparation method thereof. The xylene gas sensor comprises a ceramic tube substrate having the outer surface with two annular parallel and discrete gold electrodes, a SnO2-Co3O4 heterojunction nanostructure sensitive material coated on the outer surface of the ceramic tube and the gold electrodes, and a nickel-chromium alloy heating wire arranged in the ceramic tube. According to the invention, thesensor has the high sensitivity being 101.9 to 100 ppm and the low detection lower limit being 0. 05ppm. The prepared sensor having advantages of simple process and small size is suitable for mass production and has the broad application prospects in detection of xylene pollutants in the microenvironment.

Description

technical field [0001] The invention belongs to the technical field of semiconductor oxide gas sensors, in particular to a sensor based on SnO 2 -Co 3 o 4 Xylene gas sensor of heterojunction nanostructure sensitive material and its preparation method. Background technique [0002] Xylene is widely used as a solvent in coatings, resins, dyes, inks and other industries; it is used as a synthetic monomer or solvent in medicine, explosives, pesticides and other industries; it can also be used as a component of high-octane gasoline and is an important raw material for organic chemicals . However, similar to other organic solvents, xylene is irritating to the eyes and upper respiratory tract, and has an anesthetic effect on the central system at high concentrations. Therefore, it is of great significance to develop a xylene gas sensor with high sensitivity and low detection limit of trace gas. [0003] Among the many kinds of gas sensors, the resistive gas sensor with semicon...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/26
CPCG01N27/26
Inventor 孙鹏郭杰卢革宇刘方猛闫旭刘凤敏粱喜双高原
Owner JILIN UNIV