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A method for preparing vanadium diselenide quantum dots by liquid phase exfoliation

A technology of vanadium diselenide quantum and vanadium diselenide, which is applied in the field of preparation of vanadium diselenide quantum dots by liquid phase exfoliation, can solve the problems that there are no relevant reports on vanadium diselenide quantum dots, and achieve small size dispersion and simple preparation process , the effect of preventing spontaneous reunion

Active Publication Date: 2022-08-09
EAST CHINA NORMAL UNIV
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  • Abstract
  • Description
  • Claims
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Problems solved by technology

In addition, the reported two-dimensional material quantum dots are all semiconductor or semi-metallic, and there is no related report on the preparation of metallic vanadium diselenide quantum dots.

Method used

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  • A method for preparing vanadium diselenide quantum dots by liquid phase exfoliation
  • A method for preparing vanadium diselenide quantum dots by liquid phase exfoliation
  • A method for preparing vanadium diselenide quantum dots by liquid phase exfoliation

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Embodiment 1

[0024] Step 1: The bulk crystals of vanadium diselenide were ground into particles with a size of 0.05 mm with a mortar.

[0025] Step 2: Put 500 mg of broken vanadium diselenide into a glass container, and add 10 ml of formamide into it to prepare a concentration of 50 mg / ml, and the liquid level of formamide is not less than 2 cm.

[0026] Step 3: Pre-sonicate the prepared vanadium diselenide / formamide mixture in a sonicator in an ice-water mixed bath for 3 hours.

[0027] Step 4: further crushing the pre-sonicated vanadium diselenide / formamide mixture with a probe-type ultrasonic cell crusher. The distance that the probe protrudes into the liquid surface of the solution is 1 cm. The crushing power of the ultrasonic cell crusher is 80 watts, the working cycle of the ultrasonic probe is 2 seconds on and 2 seconds off, and the total crushing time is 4 hours. The entire sonication process uses an ice-water mixed bath.

[0028] Step 5: Put the vanadium diselenide solution cru...

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Abstract

The invention discloses a method for preparing vanadium diselenide quantum dots by liquid phase exfoliation. The method adopts formamide organic solvent to exfoliate metallic vanadium diselenide powder, and adds an appropriate amount of formamide to the vanadium diselenide powder. After that, the vanadium diselenide powder is crushed by ultrasonic pre-stripping and probe-type ultrasonic cell pulverizer, and then the vanadium diselenide quantum dots are collected and purified by centrifugation. In the preparation process, an ice-water mixed bath is used to stabilize the temperature of the ultrasonic solution near zero to prevent the quantum dots from agglomerating. Since the surface tension of formamide is close to the surface energy of vanadium diselenide, it can efficiently exfoliate vanadium diselenide to obtain quantum dots. Another advantage of using formamide is that the prepared vanadium diselenide quantum dots can exist stably in formamide for a long time. The invention can realize the efficient and mass preparation of metallic vanadium diselenide quantum dots with uniform size, and has wide application prospects in the fields of biological detection and optoelectronics.

Description

technical field [0001] The invention relates to the field of preparation of quantum dot nanomaterials, in particular to a method for preparing vanadium diselenide quantum dots by liquid phase exfoliation. Background technique [0002] Two-dimensional materials have rich electrical properties, and their conductive properties include insulators, semiconductors, semi-metals and metals. It has a wide range of applications in electronics, energy, catalysis and other fields. Among them, metallic vanadium diselenide quantum dots have potential applications in the fields of metal-enhanced fluorescence bioprobes and optoelectronics. [0003] The interlayer interaction force of vanadium diselenide with a two-dimensional layered structure is weak and belongs to van der Waals force. There is no chemical or ionic bonding between the layers, so the interlayer spacing is large, which can accommodate other ions or molecules, and dissociate into a single-layer or few-layer structure under ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B19/04B82Y30/00B82Y40/00C09K11/88
CPCC01B19/007B82Y30/00B82Y40/00C09K11/88C01P2004/32C01P2004/64
Inventor 吴幸王超伦
Owner EAST CHINA NORMAL UNIV
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