A preparation method of Gan-based LEDs with conductive DBR

Abstract

The invention relates to a GaN-based LED with a conductive DBR and a preparation method thereof, and belongs to the field of LEDs. The LED comprises a substrate, and is characterized in that a bufferlayer, an unintentionally doped GaN layer and an n-type doped GaN layer are sequentially grown on the upper surface of the substrate, a porous conductive DBR layer is grown and fabricated on the n-type doped GaN layer, and an n-type semiconductor layer, an MQW active layer, a p-type semiconductor layer and a transparent conductive layer are sequentially grown on the upper surface of the porous conductive DBR layer; the exposed part of the upper surface of the n-type doped GaN layer is provided with an n electrode, and the transparent conductive layer is provided with a p electrode; and the porous conductive DBR layer is alternately stacked high-porosity porous GaN layers and low-porosity porous GaN layers formed by electrochemical corrosion after the preparation of the transparent conductive layer. According to the invention, the porous GaN / GaN conductive DBR structure is formed by electrochemical selective corrosion, the light emitting efficiency of light emitting diode products is improved, and the process difficulty and manufacturing cost are reduced.

Description

technical field [0001] The invention relates to a preparation method of a GaN-based LED with a conductive DBR, belonging to the technical field of LEDs. Background technique [0002] Due to the wider application of optoelectronics and power electronics such as lighting, display and medical treatment, III-nitride wide bandgap semiconductor materials and devices have become a new generation of fields that countries around the world are vying to seize. With the birth of the first blue LED in the 1990s, light-emitting diode technology has developed rapidly. Due to the characteristics of small size, low cost, good monochromaticity and high efficiency, LED has broad application prospects in the fields of lighting, display and optical communication. hotspot. [0003] The main research work to realize GaN-based LEDs focuses on improving its luminous efficiency and reducing costs. Using DBR structure to improve the luminous efficiency of LED is a very effective means. One method ...

AI Technical Summary

Problems solved by technology

Devices prepared by epitaxial growth technology often require a long growth time, or DBR cracks due to stress caused by lattice mismatch; optoelectronic devices prepared by laser lift-off, bonding and polishing processes are very difficult due to substrate polishing and thinning processes. hard to control

So far, due to the lack of lattice matching materials to prepare conductive high-reflectivity DBR, the design of uniform current injection and effective optical mode confinement structure is difficult, and the process is complex and difficult to control. Therefore, it is necessary to develop high-reflectivity conductive DBR and optimize LED structure design. and process to overcome the bottleneck restricting its application

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