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a h 2 s gas sensor and its preparation method

A technology of gas sensor and electrode element, which is applied to the field of gas sensor based on Zn ion doped α-Fe2O3 nanorod and its preparation, can solve the problems of high preparation cost, poor selectivity, low sensitivity and the like, and achieves good dispersion. , Uniform size, the effect of saving production costs

Active Publication Date: 2020-10-09
NORTHEASTERN UNIV LIAONING
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] For the current pure α-Fe 2 o 3 Gas-sensing materials have low sensitivity and poor selectivity, and the usual noble metal element-doped gas-sensing materials and chemical reagents synthesize nano-α-Fe 2 o 3 Problems such as higher cost, etc., the present invention provides a Zn-doped α-Fe based 2 o 3 The gas sensor of nanorod and its preparation method, that is to use cheap pyrite as raw material, obtain Fe-containing gas by chemical leaching method 3+ leaching solution to synthesize α-Fe 2 o 3 Nanomaterials, and then by doping Zn elements into the precursor solution to prepare a new type of α-Fe with higher sensitivity and better selectivity 2 o 3 based gas sensing materials to overcome the existing α-Fe 2 o 3 The problems of high preparation cost, low sensitivity and poor selectivity of gas sensitive materials

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  • a h <sub>2</sub> s gas sensor and its preparation method

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Embodiment 1

[0030] The present embodiment based on Zn ion doping α-Fe 2 o 3 Gas sensors based on nanorods, such as figure 1 As shown, by base 1, Al 2 o 3 Ceramic tube 2, α-Fe 2 o 3 It consists of a gas sensitive material layer 3, a heating resistance wire 4, a ring-shaped gold electrode 5 and a platinum lead wire 6. Among them, a group of ring-shaped gold electrodes 5 are pre-coated in Al 2 o 3 At both ends of the ceramic tube 2, the platinum lead wire 6 is connected to the annular gold electrode 5 by welding, and the heating resistance wire 4 runs through the Al 2 o 3 In ceramic tube 2, the gas-sensing material is coated on the entire Al 2 o 3 The surface of the ceramic tube 2 and the ring-shaped gold electrode 5 will be coated with Al of the gas-sensitive material 2 o 3 The ceramic tube 2 is welded on the base 1 through a platinum lead 6 to make a gas sensor. The Zn ion doped α-Fe 2 o 3 The gas sensitive material layer is made of Zn doped α-Fe 2 o 3 The nanorods are uni...

Embodiment 2

[0048] The present embodiment based on Zn ion doping α-Fe 2 o 3 Gas sensors based on nanorods, such as figure 1 As shown, by base 1, Al 2 o 3 Ceramic tube 2, α-Fe 2 o 3 It consists of a gas sensitive material layer 3, a heating resistance wire 4, a ring-shaped gold electrode 5 and a platinum lead wire 6. Among them, a group of ring-shaped gold electrodes 5 are pre-coated in Al 2 o 3 At both ends of the ceramic tube 2, the platinum lead wire 6 is connected to the annular gold electrode 5 by welding, and the heating resistance wire 4 runs through the Al 2 o 3 In ceramic tube 2, the gas-sensing material is coated on the entire Al 2 o 3 The surface of the ceramic tube 2 and the ring-shaped gold electrode 5 will be coated with Al of the gas-sensitive material 2 o 3 The ceramic tube 2 is welded on the base 1 through a platinum lead 6 to make a gas sensor. The Zn ion doped α-Fe 2 o 3 The gas sensitive material layer is made of Zn doped α-Fe 2 o 3 The nanorods are uni...

Embodiment 3

[0059] Based on the metal ion doping α-Fe of the present embodiment 2 o 3 Gas sensors of nanomaterials, such as figure 1 As shown, by base 1, Al 2 o 3 Ceramic tube 2, α-Fe 2 o 3 The gas sensitive material layer 3, the heating resistance wire 4, the annular gold electrode 5 and the platinum lead wire 6 are composed. Among them, a group of ring-shaped gold electrodes 5 are pre-coated in Al 2 o 3 At both ends of the ceramic tube 2, the platinum lead wire 6 is connected to the annular gold electrode 5 by welding, and the heating resistance wire 4 runs through the Al 2 o 3 In ceramic tube 2, the gas-sensing material is coated on the entire Al 2 o 3 The surface of the ceramic tube 2 and the ring-shaped gold electrode 5 will be coated with Al 2 o 3 The ceramic tube 2 is welded on the base 1 through a platinum lead 6 to make a gas sensor. The Zn ion doped α-Fe 2 o 3 The gas sensitive material layer is made of Zn doped α-Fe 2 o 3 The nanorods are uniformly coated on th...

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Abstract

The invention provides a Zn element-doped α-Fe 2 O 3 Nanorod gas sensor and preparation method thereof, using pyrite as raw material, obtaining Fe-containing material through chemical leaching method 3+ leachate to synthesize α-Fe 2 O 3 Nanomaterials are used to prepare new α-Fe with higher sensitivity and better selectivity by incorporating Zn element into the precursor liquid. 2 O 3 based gas sensing material, and then α-Fe doped with Zn element 2 O 3 The base gas sensing material is evenly coated on the surface of the electrode element in the form of slurry to obtain a gas sensing element, which overcomes the existing α-Fe 2 O 3 Gas-sensitive materials have problems such as high preparation cost, low sensitivity and poor selectivity.

Description

technical field [0001] The invention belongs to the technical field of gas sensor elements of semiconductor oxides, in particular to a Zn ion-doped α-Fe 2 o 3 A nanorod gas sensor and a preparation method thereof. Background technique [0002] With the continuous acceleration of the industrialization process, a large amount of toxic and harmful gases are discharged into the atmosphere. In order to monitor the emission of toxic and harmful gases, it is necessary to develop a gas sensor that is simple, efficient and capable of detecting low-concentration gases. Among a wide variety of gas sensors, metal oxide semiconductor gas sensors are widely used due to their advantages of high sensitivity, fast response / recovery speed, easy integration and low price. According to different conductivity types, metal oxide semiconductors can be divided into n-type and p-type. Among them, the majority carriers of n-type semiconductors are electrons, and typical n-type semiconductors incl...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N27/12B82Y15/00B82Y30/00
CPCB82Y15/00B82Y30/00G01N27/127
Inventor 沈岩柏周鹏飞张威钟祥熙赵思凯高淑玲刘文刚魏德洲魏可峰
Owner NORTHEASTERN UNIV LIAONING