Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof

A gallium nitride nanometer and nanohole array technology is applied in the field of full-color micron LED display chips and their preparation, which can solve the problems that restrict the development of micron LED display technology, the low quality of micron LED display chips, and the low color conversion efficiency of quantum dots, etc. problems, to achieve high transfer efficiency and yield, improve internal quantum efficiency and color conversion efficiency, and shorten manufacturing time.

Active Publication Date: 2019-08-09
NANJING UNIV
View PDF9 Cites 21 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, this technology also has problems such as low quantum dot color conversion efficiency, poor stability, and short life, which in turn leads to problems

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof
  • Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof
  • Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0048] Example 1

[0049] The method for preparing a hybrid RGB micro-hole LED array device based on III nitride semiconductor / quantum dots includes:

[0050] (1) Choose a suitable silicon substrate 2, and after standard cleaning, use metal organic chemical vapor deposition (MOCVD) technology to sequentially grow a GaN buffer layer 3, an n-type GaN layer 4, and an undoped on the silicon substrate. GaN multiple quantum well active layer 5 and a p-type GaN layer 6 as the blue LED epitaxial layer;

[0051] (2) Using plasma enhanced chemical vapor deposition (PECVD) technology, a layer of 150nm thick SiO is deposited on the GaN blue LED epitaxial wafer 2 Dielectric layer, SiO grown by PECVD 2 The method is to pass 5% SiH into the reaction chamber 4 / N 2 And N 2 The mixed gas of O, the flow rate is 100sccm and 450sccm respectively, under the conditions of pressure 300mTorr, power 10W, temperature 350℃, pass through SiH x +O→SiO 2 (+H 2 ) Reaction to deposit SiO on the surface of the epita...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
Lengthaaaaaaaaaa
Depthaaaaaaaaaa
Widthaaaaaaaaaa
Login to view more

Abstract

The invention discloses a panchromatic micrometer LED display chip based on a gallium nitride nanopore array/quantum dot composite structure. On the GaN blue-light LED epitaxial layer of a silicon substrate, an array rectangular mesa structure penetrating through a p-type GaN layer and a quantum well active layer to a n-type GaN layer is disposed. Each rectangular mesa structure constitutes one RGB pixel unit. In each rectangular pixel unit, a red-light rectangular sub-pixel region, a green-light rectangular sub-pixel region and a blue-light rectangular sub-pixel region are included. The adjacent sub-pixel regions are isolated by an isolation trench. Each sub-pixel region is provided with a nanopore array structure and is filled with red and green quantum dots. Panchromatic display is realized by quantum dot color conversion. A preparation method of the panchromatic micrometer LED display chip is also disclosed. The panchromatic micrometer LED display chip utilizes a nanopore structureto improve the stability and lifetime of the quantum dots, and utilizes the energy resonance transfer between quantum dots to improve the internal quantum efficiency and color conversion efficiency,and achieve panchromatic display with high resolution, high color gamut, and high contrast.

Description

technical field [0001] The invention relates to a full-color micro-LED display chip based on a gallium nitride nanohole array / quantum dot hybrid structure and a preparation method thereof, belonging to the technical field of semiconductor display. Background technique [0002] Micro LED technology is the latest generation of display technology after liquid crystal (LCD) display technology and organic light-emitting diode (OLED) display technology. Micron LED refers to reducing the size of a single LED to the order of microns, and then integrating a large number of LED lamp beads to form an array. Since the size of a single micron LED pixel is extremely small, only tens or even a few microns, this technology can be used to achieve ultra-high resolution display of 1500ppi and above. At the same time, since each pixel in the micro-LED display chip is self-illuminating and can be controlled and driven independently, the micro-LED display can achieve extremely high contrast, bri...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): H01L27/15H01L33/12H01L33/32H01L33/06B82Y30/00
CPCB82Y30/00H01L27/156H01L33/06H01L33/12H01L33/32
Inventor 余俊驰刘斌陶涛郝勇许非凡周玉刚谢自力张荣郑有炓
Owner NANJING UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap