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Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof

A gallium nitride nanometer and nanohole array technology is applied in the field of full-color micron LED display chips and their preparation, which can solve the problems that restrict the development of micron LED display technology, the low quality of micron LED display chips, and the low color conversion efficiency of quantum dots, etc. problems, to achieve high transfer efficiency and yield, improve internal quantum efficiency and color conversion efficiency, and shorten manufacturing time.

Active Publication Date: 2019-08-09
NANJING UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this technology also has problems such as low quantum dot color conversion efficiency, poor stability, and short life, which in turn leads to problems such as low quality of micron LED display chips.
These technical problems have restricted the development of micro-LED display technology to a certain extent.

Method used

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  • Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof
  • Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof
  • Panchromatic micrometer LED display chip based ona gallium nitride nanopore array/quantum dot composite structure and preparation method thereof

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Embodiment 1

[0049] The preparation method of the hybrid RGB microhole LED array device based on Group III nitride semiconductor / quantum dots, the steps include:

[0050] (1) Select a suitable silicon substrate 2, after performing standard cleaning, use metal organic chemical vapor deposition (MOCVD) technology to sequentially grow a GaN buffer layer 3, an n-type GaN layer 4, and an undoped layer on the silicon substrate GaN multi-quantum well active layer 5, and a p-type GaN layer 6, as the blue LED epitaxial layer;

[0051] (2) Using plasma-enhanced chemical vapor deposition (PECVD) technology, a layer of 150nm thick SiO was evaporated on the GaN blue LED epitaxial wafer 2 Dielectric layer, PECVD grown SiO 2 The way is to pass 5% SiH into the reaction chamber 4 / N 2 and N 2 The mixed gas of O, the flow rates are 100sccm and 450sccm respectively, under the condition of pressure 300mTorr, power 10W, temperature 350℃, through SiH x +O→SiO 2 (+H 2 ) reaction to deposit SiO on the epit...

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Abstract

The invention discloses a panchromatic micrometer LED display chip based on a gallium nitride nanopore array / quantum dot composite structure. On the GaN blue-light LED epitaxial layer of a silicon substrate, an array rectangular mesa structure penetrating through a p-type GaN layer and a quantum well active layer to a n-type GaN layer is disposed. Each rectangular mesa structure constitutes one RGB pixel unit. In each rectangular pixel unit, a red-light rectangular sub-pixel region, a green-light rectangular sub-pixel region and a blue-light rectangular sub-pixel region are included. The adjacent sub-pixel regions are isolated by an isolation trench. Each sub-pixel region is provided with a nanopore array structure and is filled with red and green quantum dots. Panchromatic display is realized by quantum dot color conversion. A preparation method of the panchromatic micrometer LED display chip is also disclosed. The panchromatic micrometer LED display chip utilizes a nanopore structureto improve the stability and lifetime of the quantum dots, and utilizes the energy resonance transfer between quantum dots to improve the internal quantum efficiency and color conversion efficiency,and achieve panchromatic display with high resolution, high color gamut, and high contrast.

Description

technical field [0001] The invention relates to a full-color micro-LED display chip based on a gallium nitride nanohole array / quantum dot hybrid structure and a preparation method thereof, belonging to the technical field of semiconductor display. Background technique [0002] Micro LED technology is the latest generation of display technology after liquid crystal (LCD) display technology and organic light-emitting diode (OLED) display technology. Micron LED refers to reducing the size of a single LED to the order of microns, and then integrating a large number of LED lamp beads to form an array. Since the size of a single micron LED pixel is extremely small, only tens or even a few microns, this technology can be used to achieve ultra-high resolution display of 1500ppi and above. At the same time, since each pixel in the micro-LED display chip is self-illuminating and can be controlled and driven independently, the micro-LED display can achieve extremely high contrast, bri...

Claims

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Application Information

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IPC IPC(8): H01L27/15H01L33/12H01L33/32H01L33/06B82Y30/00
CPCH01L27/156H01L33/12H01L33/32H01L33/06B82Y30/00
Inventor 余俊驰刘斌陶涛郝勇许非凡周玉刚谢自力张荣郑有炓
Owner NANJING UNIV
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